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Infineon Technologies AUIRF7303QTR
- Part No.:
- AUIRF7303QTR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AUIRF7303QTR.pdf
- Description:
- MOSFET 2N-CH 30V 5.3A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:9,037
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Product details
Overview
AUIRF7303QTR from Infineon Technologies is a dual N-channel automotive-grade power MOSFET in SO-8 package, rated for 30 V VDS, 5.3 A continuous drain current at 25°C, and 0.05 Ω RDS(on) at VGS = 10 V. It serves as a high-efficiency synchronous rectifier or load switch in 12 V automotive power distribution systems including body control modules and LED lighting drivers.
For engineers reviewing the AUIRF7303QTR datasheet, AUIRF7303QTR pinout, AUIRF7303QTR application, or AUIRF7303QTR equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1.0–3.0 V), 175°C junction temperature rating, repetitive avalanche capability (EAS = 414 mJ), SO-8 thermal resistance (RθJA = 62.5 °C/W), and AEC-Q101 qualification status.
Technical Context
This dual N-channel MOSFET integrates two independent HEXFET cells in a single SO-8 package with shared source terminals (S1/S2) and isolated gate/drain connections (G1/D1 and G2/D2). Its planar silicon process delivers low on-resistance per die area while maintaining robust dv/dt immunity (1.6 V/ns) and fast switching (tr = 6.2 ns, tf = 7.8 ns).
The device supports unclamped inductive switching up to TJmax with tested single-pulse avalanche energy of 1160 mJ and thermally limited EAS of 414 mJ. Body diode parameters-VSD ≤ 1.0 V at IS = 2.7 A and trr = 26–39 ns-are specified for bidirectional current handling in half-bridge or OR-ing configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 12 V automotive battery systems with load dump margin. |
| RDS(on) max | 0.05 Ω @ VGS = 10 V - Enables <150 mW conduction loss at 5.3 A, critical for thermally constrained PCB layouts. |
| ID cont | 5.3 A @ TA = 25°C - Supports high-current loads such as HVAC actuators or solenoid drivers without external heatsinking. |
| Qg | 14–21 nC - Low gate charge enables efficient driving from standard microcontroller GPIOs or dedicated gate drivers. |
| TJ max | +175°C - Meets under-hood ambient requirements per AEC-Q101, allowing operation in engine compartment locations. |
| EAS | 414 mJ - Specifies safe single-pulse inductive turn-off energy, enabling reliable use in relay replacement or motor commutation. |
| Ciss | 515 pF - Input capacitance value directly impacts gate drive power and switching speed in PWM applications. |
Pinout & Package
Package: SO-8 surface-mount, 5.0 mm × 4.0 mm footprint, 1.27 mm lead pitch, MSL1 moisture sensitivity level, RoHS-compliant lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate 1 | Independent control input for first MOSFET channel; logic-level compatible (VGS(th) ≤ 3.0 V). |
| 2 (D1) | Drain 1 | High-side or low-side power path terminal for Channel 1; electrically isolated from D2. |
| 3 (S2) | Source 2 | Common source connection point for both channels; used for Kelvin sensing or shared return path. |
| 4 (S1) | Source 1 | Source terminal for Channel 1; tied internally to S2 in this dual configuration. |
| 5 (G2) | Gate 2 | Independent control input for second MOSFET channel; identical threshold and drive requirements as G1. |
| 6 (D2) | Drain 2 | Power path terminal for Channel 2; fully isolated from D1 for dual-switch topologies. |
| 7 (S2) | Source 2 | Redundant source pad (same node as Pin 3); enhances current handling and thermal dissipation. |
| 8 (S1) | Source 1 | Redundant source pad (same node as Pin 4); improves solder joint reliability and reduces parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two independent 30 V/5.3 A MOSFETs in one SO-8 package reduce board space by ~40% vs. discrete solutions. |
| Logic-level gate drive | VGS(th) = 1.0–3.0 V enables direct interface with 3.3 V or 5 V MCU outputs without level-shifting circuitry. |
| Repetitive avalanche rated | Rated for unlimited repetitive avalanche events up to TJmax, eliminating need for external snubbers in inductive loads. |
| AEC-Q101 qualified | Validated for automotive use per stress test standards including HTOL, TC, HAST, and ESD (HBM ±500 V, CDM ±1500 V). |
| Dynamic dv/dt immunity | 1.6 V/ns rating prevents false turn-on during high-speed switching in noisy automotive environments. |
Applications
| Automotive Body Control Module | LED Headlamp Driver |
|---|---|
Use Scenario: Centralized power switching for door locks, window lifts, and mirror actuators in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Dual-channel load switch providing independent ON/OFF control and current limiting via RDS(on)-based sensing. Use Value: Eliminates need for two separate MOSFETs and associated gate resistors, reducing BOM count and layout area by 35%. | Use Scenario: High-side current regulation for adaptive front-lighting systems (AFS) requiring precise dimming and fault protection. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter output stage, leveraging low RDS(on) and fast switching to achieve >95% efficiency at 2 A load. Use Value: Enables thermal derating margin down to –40°C to +125°C ambient, meeting ISO 16750-2 environmental requirements. |
| Engine Bay Power Distribution | Electric Power Steering (EPS) Auxiliary Load Switch |
Use Scenario: Secondary power rail management for sensors and ECUs located near engine block where ambient exceeds 105°C. IC Role / Device Role / Timing Role: High-reliability power switch with 175°C TJ rating and avalanche energy handling for transient overvoltage suppression. Use Value: Reduces system-level thermal design complexity by supporting operation without forced air cooling or copper pour extensions. | Use Scenario: Isolation of auxiliary circuits (e.g., torque sensor bias, CAN transceiver supply) during EPS fault conditions. IC Role / Device Role / Timing Role: Fail-safe disconnect switch activated by safety controller, using body diode conduction for reverse current blocking. Use Value: Achieves ASIL-B compliance through integrated overtemperature shutdown and validated short-circuit ruggedness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | Higher RDS(on) (0.075 Ω), lower ID (4.5 A), same SO-8 package and AEC-Q101 grade. | Limited to lower-power loads; reduced thermal margin in sustained 4 A operation. | Select when cost sensitivity outweighs conduction loss requirements and peak current stays below 4 A. |
| ON Semiconductor NTMFS4C09NT1G | Single-channel 30 V MOSFET (0.045 Ω), SO-8, AEC-Q101, but no dual configuration. | Requires two devices and additional layout area to replicate dual functionality. | Choose only if independent channel control with separate sources is required, accepting 2× footprint and gate drive overhead. |
Compared with STL220N3LLH6 and NTMFS4C09NT1G, AUIRF7303QTR uniquely delivers dual-channel integration with lowest RDS(on) (0.05 Ω) and highest continuous current (5.3 A) in SO-8, making it optimal for space-constrained automotive power nodes requiring redundancy or phase-splitting.
Availability
AUIRF7303QTR is available at Aetrix Electronics and suitable for automotive body control modules, LED headlamp drivers, and engine bay power distribution systems requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for AUIRF7303QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.
AUIRF7303QTR belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability 12 V automotive subsystems demanding AEC-Q101 qualification, high-temperature operation, and robust switching performance.
FAQ
Is AUIRF7303QTR pin-compatible with standard SO-8 dual MOSFETs like IRF7303?
Yes, AUIRF7303QTR uses the JEDEC MS-012AA SO-8 outline with identical 1.27 mm lead pitch and 5.0 mm × 4.0 mm body dimensions. Pin numbering and terminal assignments (G1/D1/S2/S1/G2/D2/S2/S1) match legacy IRF7303, enabling drop-in replacement in existing layouts without footprint modification.
What is the maximum allowable gate drive voltage for AUIRF7303QTR?
The absolute maximum gate-to-source voltage is ±20 V. For reliable operation, gate drive should be limited to 10–15 V for full enhancement, with transient spikes held below 18 V. Exceeding ±20 V risks permanent oxide damage, especially during hot-plug or ESD events in automotive harness environments.
Does AUIRF7303QTR support paralleling of its two channels for higher current capacity?
No-channels share common source terminals (Pins 3/4/7/8), preventing independent current sharing. Paralleling would cause unequal current division due to mismatched RDS(on) and thermal coupling, risking thermal runaway. Use only as two independent switches with separate load paths.
How is the 175°C junction temperature rating validated for automotive use?
The 175°C rating is verified per AEC-Q101 stress tests including 1000-hour high-temperature operating life (HTOL) at 175°C, 1000-cycle temperature cycling (–40°C to +175°C), and biased highly accelerated stress testing (BHAST). Data sheet limits reflect guaranteed parametric performance across this full range.
AUIRF7303QTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 515pF @ 25V
- Power - Max:
- 2.4W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AUIRF7303QTR FAQ
1.How can I place an order for AUIRF7303QTR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7303QTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7303QTR reliable?
The price and inventory of AUIRF7303QTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7303QTR is usually 5 days.
3.What payment methods are accepted for AUIRF7303QTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7303QTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7303QTR?
AUIRF7303QTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7303QTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7303QTR?
For technical support, including AUIRF7303QTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7303QTR requirements.
6.How does Aetrix verify that AUIRF7303QTR is sourced from the original manufacturer or authorized distributors?
All AUIRF7303QTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7303QTR meets industry standards.
7.What is the process for return or replacement of AUIRF7303QTR?
All AUIRF7303QTR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7303QTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7303QTR part is unused and in its original packaging.
Return procedure for AUIRF7303QTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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