Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRF7304Q

Part No.:
AUIRF7304Q
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAUIRF7304Q.pdf
Description:
MOSFET 2P-CH 20V 4.3A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,983

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRF7304Q from Infineon is a dual P-channel automotive-grade HEXFET® Power MOSFET in SO-8 package, rated for -20V VDS, 0.090Ω RDS(on) at -4.5V VGS, and -4.3A continuous drain current. It delivers fast switching (tr = 26ns, tf = 33ns), operates up to +150°C junction temperature, and features logic-level gate drive compatibility. It is used in automotive load switching, such as body control modules and LED lighting drivers.

For engineers reviewing the AUIRF7304Q datasheet, AUIRF7304Q pinout, AUIRF7304Q application, or AUIRF7304Q equivalent, key selection criteria include its dual P-channel configuration, -20V breakdown voltage, low on-resistance at logic-level gate drive, thermal robustness to 150°C, and automotive qualification per AEC-Q101.

Technical Context

This dual P-channel MOSFET integrates two matched high-efficiency HEXFET cells in a single SO-8 package, enabling compact half-bridge or dual independent load switch topologies. Its planar process ensures stable RDS(on) over temperature (±0.012 V/°C dV(BR)DSS/dTJ) and rugged dv/dt immunity (-5.0 V/ns).

The device supports logic-level operation down to -2.7V VGS (RDS(on) ≤ 0.140Ω), includes an integral body diode with trr = 56–84 ns and Qrr = 71–110 nC, and exhibits low gate charge (Qg = 22 nC) for efficient PWM-driven applications in 12V automotive systems.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-20 V - Withstands reverse battery transients up to ISO 7637-2 Pulse 5a in 12V automotive systems
RDS(on) max0.090 Ω @ VGS = -4.5V - Enables <100 mW conduction loss at 3.3A load current
ID cont-4.3 A @ TA = 25°C - Supports typical automotive solenoid or lamp loads without heatsinking
Qg22 nC - Allows efficient gate driving with standard logic-level MCU GPIOs or dedicated drivers
tr/tf26 ns / 33 ns - Minimizes switching losses in 20–100 kHz PWM applications
TJ max+150 °C - Certified for under-hood operation per AEC-Q101 Grade 1
dv/dt rating-5.0 V/ns - Resists false turn-on during high-noise engine cranking or load dump events

Pinout & Package

Package: SO-8 (JEDEC MS-012AA), surface-mount, lead-free and RoHS compliant. Thermal resistance RθJA = 62.5 °C/W on 1-inch² copper board.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4Source 1 (S1)Common source terminal for first P-MOSFET channel; internally bonded to pins 1–4 for low-inductance layout
5Gate 1 (G1)Independent gate input for first channel; requires separate logic-level drive
6Drain 1 (D1)High-side switched output for first channel; connected to load return path
7Drain 2 (D2)High-side switched output for second channel; electrically isolated from D1
8Gate 2 (G2)Independent gate input for second channel; enables asynchronous dual-load control
-Source 2 (S2)Common source terminal for second P-MOSFET channel; tied internally to pins 1–4 (shared source)

Key Features

FeatureDesign Value
Dual P-channel integrationTwo matched, independently gated MOSFETs in one SO-8 footprint - reduces PCB area by ~40% vs. discrete dual devices
Logic-level gate driveFull enhancement at VGS = -4.5V - eliminates need for gate driver ICs in 5V/3.3V MCU-controlled systems
Automotive qualificationAEC-Q101 qualified - validated for temperature cycling, humidity, mechanical shock, and ESD per automotive reliability standards
Fast body diodetrr = 56 ns, Qrr = 71 nC - minimizes energy loss and voltage overshoot in freewheeling paths of relay or motor drives
Dynamic dv/dt immunity-5.0 V/ns rated - prevents spurious turn-on during high-slew-rate transients in noisy vehicle electrical environments

Applications

Body Control Module (BCM)Automotive LED Headlamp Driver

Use Scenario: Controlling door locks, window lifts, and interior lighting via centralized microcontroller.

IC Role / Device Role / Timing Role: Dual high-side load switch managing two independent 12V resistive/inductive loads with independent enable timing.

Use Value: Shared-source architecture simplifies PCB routing while maintaining isolation; -4.3A rating supports peak inrush of solenoids and incandescent bulbs.

Use Scenario: PWM dimming and on/off control of high-brightness LED arrays in adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: High-side current switch enabling precise current regulation and fast fault shutdown (<100 ns response).

Use Value: Low RDS(on) (0.090Ω) limits self-heating at 2A LED current; 150°C rating sustains operation near heat-generating optics.

Engine Control Unit (ECU) Auxiliary Load Switch12V Automotive HVAC Blower Control

Use Scenario: Switching fuel pump relays, purge valves, or camshaft phasers in engine management subsystems.

IC Role / Device Role / Timing Role: Robust high-side switch handling repetitive pulsed loads with high dv/dt noise immunity.

Use Value: -5.0 V/ns dv/dt rating prevents false triggering during ignition coil switching; AEC-Q101 ensures long-term reliability under vibration and thermal stress.

Use Scenario: Variable-speed control of DC brushless blowers in climate control systems using PWM-fed H-bridge configurations.

IC Role / Device Role / Timing Role: One half of complementary high-side switch pair; provides controlled power delivery with fast turn-off to limit back-EMF spikes.

Use Value: Fast fall time (33 ns) and low Qgd (9.0 nC) reduce shoot-through risk; integrated body diode handles freewheeling current without external components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SPB04N60C3Single N-channel, 600V, TO-220 - not dual, not P-channel, higher voltage, incompatible topologyDesigned for offline SMPS, not automotive low-voltage load switchingNot suitable as direct replacement; requires circuit redesign and gate driver inversion
IPB80P04P4L-04Dual P-channel, -40V VDS, 0.0042Ω RDS(on), TO-263 - higher voltage rating, lower on-resistance, larger packageTargeted at high-current 24V commercial vehicles; exceeds requirements for 12V BCM use casesOver-specified for most AUIRF7304Q applications; increases cost and PCB area without benefit

Compared with SPB04N60C3 and IPB80P04P4L-04, the AUIRF7304Q uniquely balances SO-8 footprint, logic-level drive, -20V rating, and AEC-Q101 compliance - making it optimal for space-constrained 12V automotive load switches where dual independent control and thermal resilience are critical.

Availability

AUIRF7304Q is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting drivers, engine auxiliary load switching, and HVAC blower control requiring stable component supply across production lifecycles.

Supply support for AUIRF7304Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control solutions, with global manufacturing and quality certification infrastructure.

The AUIRF7304Q belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12V vehicle subsystems demanding logic-compatible drive, thermal resilience, and noise immunity.

FAQ

Is AUIRF7304Q pin-compatible with standard SO-8 dual MOSFETs like SI4946DY?

No. AUIRF7304Q uses a shared-source pinout (pins 1–4 = S1/S2), whereas SI4946DY has independent source pins. Direct substitution would cause short-circuit between channels. Layout and schematic must be verified against the AUIRF7304Q top-view diagram showing G1/D1/S1 and G2/D2/S2 connections.

Can AUIRF7304Q be used in a synchronous buck converter as high-side switch?

No. As a P-channel device, it lacks the low RDS(on) and gate drive efficiency required for high-frequency synchronous rectification. Its 22 nC Qg and 33 ns tf are optimized for <200 kHz load switching-not MHz-range power conversion. Use dedicated synchronous buck controllers with N-channel high-side drivers instead.

What is the maximum safe continuous current at 85°C ambient temperature?

At TA = 85°C, derated current is approximately -2.4A, calculated using RθJA = 62.5 °C/W and TJ(max) = 150°C: ΔT = 65°C → PD = 65 / 62.5 = 1.04 W → I = √(P / RDS(on)) = √(1.04 / 0.090) ≈ 3.4A. However, datasheet specifies -3.4A at TA = 70°C; linear interpolation yields ~-2.4A at 85°C with margin.

Does AUIRF7304Q require external gate resistors for automotive EMI compliance?

Yes. While not mandatory for basic operation, a 10–22Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and MOSFET input capacitance (Ciss = 610 pF), especially in high-di/dt automotive environments. This improves EMC performance and reduces radiated emissions per CISPR 25 Class 5 requirements.

AUIRF7304Q Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.3A
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
610pF @ 15V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AUIRF7304Q FAQ

1.How can I place an order for AUIRF7304Q through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7304Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7304Q reliable?

The price and inventory of AUIRF7304Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7304Q is usually 5 days.

3.What payment methods are accepted for AUIRF7304Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7304Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7304Q?

AUIRF7304Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7304Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7304Q?

For technical support, including AUIRF7304Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7304Q requirements.

6.How does Aetrix verify that AUIRF7304Q is sourced from the original manufacturer or authorized distributors?

All AUIRF7304Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7304Q meets industry standards.

7.What is the process for return or replacement of AUIRF7304Q?

All AUIRF7304Q units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7304Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7304Q part is unused and in its original packaging.

Return procedure for AUIRF7304Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRF7304Q Tags

  • AUIRF7304Q
  • AUIRF7304Q PDF
  • AUIRF7304Q Datasheet
  • AUIRF7304Q Specifications
  • AUIRF7304Q Images
  • Infineon Technologies
  • Infineon Technologies AUIRF7304Q
  • Buy AUIRF7304Q
  • AUIRF7304Q Price
  • AUIRF7304Q Distributor
  • AUIRF7304Q Supplier
  • AUIRF7304Q Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER