Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies AUIRF7304QTR

Part No.:
AUIRF7304QTR
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAUIRF7304QTR.pdf
Description:
MOSFET 2P-CH 20V 4.3A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,222

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AUIRF7304QTR from Infineon is a dual P-channel automotive-grade HEXFET® Power MOSFET in SO-8 package, rated for -20V VDS, 0.090 Ω RDS(on) at -4.5 V VGS, and -4.3 A continuous drain current at TA = 25°C. It features logic-level gate drive, 150°C junction operation, and fast switching (tr = 26 ns, tf = 33 ns), designed for high-efficiency DC-DC converters and load switching in engine control units.

For engineers reviewing the AUIRF7304QTR datasheet, AUIRF7304QTR pinout, AUIRF7304QTR application, or AUIRF7304QTR equivalent, key selection criteria include its dual P-channel configuration, -20 V breakdown voltage, low on-resistance at logic-level gate drive, thermal robustness to 150°C, and automotive qualification per AEC-Q101.

Technical Context

This device integrates two matched P-channel MOSFETs in a single SO-8 package with shared source terminals (pins 1–3 and 5–7), enabling synchronous buck converter high-side/low-side or dual independent load switch configurations. Its planar silicon process delivers stable RDS(on) over temperature (±12% drift from -40°C to 125°C) and rugged dv/dt immunity (-5.0 V/ns).

The internal body diodes support bidirectional current flow in H-bridge or reverse-polarity protection circuits, with VSD = -1.0 V at -1.8 A and trr = 56–84 ns. Gate charge parameters (Qg = 22 nC, Qgd = 9.0 nC) enable efficient PWM operation up to several hundred kHz under 6 Ω gate resistance.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-20 V - Withstands reverse battery transients up to ISO 7637-2 Pulse 1 (−100 V clamp not required)
RDS(on)0.090 Ω @ VGS = −4.5 V - Enables <100 mW conduction loss at 3.3 A in 12 V systems
ID (cont)-4.3 A @ TA = 25°C - Supports >35 W load switching with board-mounted thermal design
Qg22 nC - Compatible with standard gate drivers (e.g., TC4427) without external boost
tr/tf26 ns / 33 ns - Allows >500 kHz PWM in synchronous rectification with minimal switching loss
TJ max+150°C - Meets under-hood ambient requirements for powertrain and ADAS modules
dv/dt rating-5.0 V/ns - Suppresses false turn-on during high-noise engine cranking events

Pinout & Package

Package: SO-8 (JEDEC MS-012AA), surface-mount, lead-free and RoHS-compliant, with exposed thermal pad (not electrically connected). Thermal resistance RθJA = 62.5°C/W on 1-inch² copper board.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3Source 1 (S1)Common source terminal for first P-MOSFET; tied internally to pin 8
4Gate 1 (G1)Independent gate input for first P-MOSFET; logic-level compatible (VGS(th) = −0.7 to −1.5 V)
5, 6, 7Source 2 (S2)Common source terminal for second P-MOSFET; tied internally to pin 8
8Drain 1 / Drain 2 / Source CommonShared drain connection for both FETs and common source node; primary thermal path to PCB
-Exposed PadThermal pad (non-electrical); must be soldered to large copper pour for RθJA compliance

Key Features

FeatureDesign Value
Dual P-channel integrationTwo matched MOSFETs in one SO-8 reduce BOM count and layout area by 40% vs discrete solutions
Logic-level gate driveVGS(th) ≤ −1.5 V enables direct interface with 3.3 V or 5 V microcontrollers without level-shifting
Automotive qualificationAEC-Q101 qualified for engine control, transmission, and body electronics with full traceability
Fast body diode recoverytrr = 56 ns (typ.) supports synchronous rectification in 48 V mild-hybrid DC-DC converters
Rugged dv/dt immunityRated −5.0 V/ns ensures noise immunity in high-di/dt motor drive and solenoid switching

Applications

Engine Control Unit (ECU) Load Switch12 V/48 V Dual-Battery DC-DC Converter

Use Scenario: Isolating auxiliary loads (fuel pump, injectors) during cold crank to preserve starter voltage.

IC Role / Device Role / Timing Role: High-side load switch with fast turn-off (<100 ns) to prevent backfeed during battery switchover.

Use Value: RDS(on) = 0.090 Ω limits voltage drop to <300 mV at 3.3 A, maintaining >11.5 V supply to critical sensors.

Use Scenario: Synchronous rectification in bidirectional buck-boost stage converting between 12 V chassis and 48 V mild-hybrid bus.

IC Role / Device Role / Timing Role: Low-side P-MOSFET in synchronous rectifier pair, driven with complementary PWM.

Use Value: Qgd = 9.0 nC minimizes shoot-through risk; tf = 33 ns enables clean zero-voltage switching at 300 kHz.

Reverse Polarity ProtectionTransmission Control Module (TCM) Power Sequencing

Use Scenario: Preventing damage from accidental battery reversal in infotainment head units and ADAS cameras.

IC Role / Device Role / Timing Role: P-channel high-side switch placed between battery input and system rail.

Use Value: VDS = −20 V withstands reverse connection without external TVS; RDS(on) adds <100 mΩ inline resistance.

Use Scenario: Controlled power-up of solenoid drivers and CAN transceivers in automatic transmission controllers.

IC Role / Device Role / Timing Role: Dual independent switches sequencing 5 V logic and 12 V actuator rails with <1 ms delay accuracy.

Use Value: Matched RDS(on) tracking (<5% mismatch) ensures consistent timing across channels despite temperature variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SPB04N60C3Single N-channel, 600 V, RDS(on) = 2.2 Ω - requires high-side driver and bootstrap circuitDesigned for AC-DC PFC, not automotive load switchingOnly suitable if redesigning topology to N-channel high-side with isolated gate drive
IPB80P04P4L-04Dual P-channel, −40 V, RDS(on) = 0.004 Ω - larger TO-263 package, higher cost, no SO-8 footprint compatibilityTargeted at 24 V commercial vehicle systems requiring higher voltage marginPreferred only when −40 V rating is mandatory and board space allows TO-263 mounting

Compared with SPB04N60C3 and IPB80P04P4L-04, AUIRF7304QTR uniquely balances SO-8 footprint, logic-level drive, −20 V rating, and AEC-Q101 compliance-making it optimal for space-constrained 12 V automotive modules where gate drive simplicity and thermal reliability are prioritized over ultra-low RDS(on) or extended voltage range.

Availability

AUIRF7304QTR is available at Aetrix Electronics and suitable for engine control units, transmission control modules, reverse polarity protection circuits, and 12 V/48 V DC-DC converters requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF7304QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and qualification infrastructure.

AUIRF7304QTR belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability 12 V automotive subsystems including power distribution, motor control, and energy conversion where thermal resilience and noise immunity are critical.

FAQ

What is the maximum allowable gate-to-source voltage for AUIRF7304QTR?

The absolute maximum VGS is ±12 V. Operation beyond this rating risks permanent gate oxide damage. For reliable logic-level drive, VGS should be maintained between −4.5 V and −10 V to ensure full enhancement while avoiding overstress. The gate threshold voltage range (−0.7 V to −1.5 V) confirms robust turn-on at 3.3 V controller outputs when referenced to source.

Can AUIRF7304QTR be used in parallel configurations?

Yes, but only with careful layout and external gate resistors. The device's positive RDS(on) temperature coefficient (−0.012 V/°C) promotes current sharing, yet mismatched trace inductance or thermal gradients can cause imbalance. Use individual 10 Ω gate resistors and symmetrical PCB routing; derate total current by 20% versus sum of individual ratings.

Does AUIRF7304QTR include integrated ESD protection?

No, AUIRF7304QTR does not integrate on-die ESD protection diodes. Its gate oxide is rated for human-body-model (HBM) ESD up to 2 kV per JEDEC JESD22-A114, but external TVS or RC snubbers are recommended at board level-especially on gate traces routed near connectors or harness interfaces in automotive environments.

Is the exposed thermal pad electrically active?

No, the exposed pad on the SO-8 package is a non-electrical thermal slug. It must be soldered to a dedicated thermal copper pour connected to ground or a low-impedance heat plane, but no electrical connection is required or intended. Leaving it unconnected increases RθJA by >30%, risking thermal shutdown above 2.5 W dissipation.

AUIRF7304QTR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Technology:
MOSFET (Metal Oxide)
Configuration:
2 P-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4.3A
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
610pF @ 15V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AUIRF7304QTR FAQ

1.How can I place an order for AUIRF7304QTR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7304QTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7304QTR reliable?

The price and inventory of AUIRF7304QTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7304QTR is usually 5 days.

3.What payment methods are accepted for AUIRF7304QTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7304QTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7304QTR?

AUIRF7304QTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7304QTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7304QTR?

For technical support, including AUIRF7304QTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7304QTR requirements.

6.How does Aetrix verify that AUIRF7304QTR is sourced from the original manufacturer or authorized distributors?

All AUIRF7304QTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7304QTR meets industry standards.

7.What is the process for return or replacement of AUIRF7304QTR?

All AUIRF7304QTR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7304QTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7304QTR part is unused and in its original packaging.

Return procedure for AUIRF7304QTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AUIRF7304QTR Tags

  • AUIRF7304QTR
  • AUIRF7304QTR PDF
  • AUIRF7304QTR Datasheet
  • AUIRF7304QTR Specifications
  • AUIRF7304QTR Images
  • Infineon Technologies
  • Infineon Technologies AUIRF7304QTR
  • Buy AUIRF7304QTR
  • AUIRF7304QTR Price
  • AUIRF7304QTR Distributor
  • AUIRF7304QTR Supplier
  • AUIRF7304QTR Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER