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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies AUIRF7309Q

Name: AUIRF7309Q
Brand: Infineon Technologies
SKU: AUIRF7309Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF7309Q

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AUIRF7309Q.pdf

Description:: MOSFET N/P-CH 30V 4A/3A 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF7309Q from Infineon is an automotive-qualified dual-channel HEXFET® Power MOSFET in SO-8 package, integrating one N-channel (30 V, 4.7 A, R_DS(on) = 0.05 Ω @ V_GS = 10 V) and one P-channel (−30 V, −3.5 A, R_DS(on) = 0.10 Ω @ V_GS = −10 V) device. It delivers logic-level gate drive, fast switching (t_d(on) = 6.8 ns, t_f = 7.7 ns), and 150°C junction operation for bidirectional load control in automotive body electronics.

For engineers reviewing the AUIRF7309Q datasheet, AUIRF7309Q pinout, AUIRF7309Q application, or AUIRF7309Q equivalent, key selection factors include dual-channel complementary conduction, SO-8 thermal performance (R_θJA = 90 °C/W), automotive-grade reliability (AEC-Q101 qualified), and body-diode reverse recovery (t_rr = 47–71 ns).

Technical Context

This dual MOSFET supports half-bridge and H-bridge topologies with independent gate control. Its N- and P-channel devices share a common source configuration in SO-8, enabling compact high-side/low-side switching without external level-shifting circuitry.

The device features dynamic dv/dt immunity (6.9 V/ns for N-ch, −6.0 V/ns for P-ch), ruggedized planar process design, and specified gate charge values (Q_g = 25 nC per channel) that enable predictable PWM timing and reduced gate driver power loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	N-ch: 30 V; P-ch: −30 V - defines maximum blocking voltage in automotive 12 V systems with load-dump margin.
R_DS(on) @ V_GS = 10 V	N-ch: 0.05 Ω; P-ch: 0.10 Ω - enables <100 mW conduction loss at 2 A continuous current.
I_D continuous @ T_A = 25°C	N-ch: 4.0 A; P-ch: −3.0 A - supports typical automotive solenoid and LED driver loads.
Q_g total	25 nC per channel - determines gate driver current requirement for 100 kHz switching at 5 V logic drive.
t_r/t_f	N-ch: 21 ns / 7.7 ns; P-ch: 17 ns / 18 ns - ensures minimal overlap loss in synchronous rectification.
T_J max	+150°C - meets under-hood temperature requirements per AEC-Q101 Grade 1.
C_iss	N-ch: 520 pF; P-ch: 440 pF - impacts EMI filtering design and gate drive stability.

Pinout & Package

Package: SO-8 (surface-mount, 150°C rated, RoHS-compliant). Thermal resistance R_θJA = 90 °C/W (PCB mounted, still air).

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	N-channel gate	Logic-level input (V_GS(th) = 1.0–3.0 V); requires no level shifter for 3.3 V/5 V MCU drive.
2 (S1)	N-channel source	Common source node for N-ch; tied to ground in low-side switch configuration.
3 (D1)	N-channel drain	Power output node; electrically isolated from P-ch drain (pin 5) for half-bridge use.
4 (G2)	P-channel gate	Inverted logic interface (V_GS(th) = −1.0 to −3.0 V); driven low to turn on.
5 (D2)	P-channel drain	High-side power output; connects to supply rail in high-side switch applications.
6 (S2)	P-channel source	Common source node for P-ch; tied to load in high-side configuration.
7, 8 (D1/D2)	Drain pads (pins 3 & 5 extended)	Thermally enhanced drain connections; soldered to PCB copper for improved heat dissipation.

Key Features

Feature	Design Value
Dual N- and P-channel integration	Enables complementary switching in single SO-8 footprint-reduces board area by >40% vs. discrete pairs.
Logic-level gate drive	V_GS(th) range (±1.0–3.0 V) allows direct interfacing with 3.3 V microcontrollers without gate drivers.
Dynamic dv/dt rating	6.9 V/ns (N-ch) and −6.0 V/ns (P-ch) prevent false turn-on during fast transients in noisy automotive environments.
AEC-Q101 qualification	Validated for automotive body electronics per stress test standards including HTGB, HTRB, and TC1000 cycles.
Fast body diode recovery	t_rr = 47–71 ns (N-ch), 53–80 ns (P-ch) minimizes shoot-through risk and reduces snubber losses.

Applications

Automotive Door Lock Actuator

Automotive LED Headlamp Dimming

Use Scenario: Bidirectional DC motor control for latch/unlatch motion in door modules.

IC Role / Device Role / Timing Role: Dual-channel MOSFET provides H-bridge polarity reversal using four external control signals (G1/G2 logic states).

Use Value: Integrated N+P pair eliminates cross-conduction risk during direction change and reduces PCB component count by two discrete FETs.

Use Scenario: PWM-controlled current regulation for adaptive LED headlamp arrays.

IC Role / Device Role / Timing Role: N-channel FET acts as low-side PWM switch; P-channel serves as high-side dimming switch for split-rail current paths.

Use Value: Matched R_DS(on) and Q_g ensure synchronized duty cycle response across both channels, minimizing brightness flicker.

Automotive HVAC Blower Control

Automotive Mirror Fold/Unfold Circuit

Use Scenario: Variable-speed fan control via PWM-driven N-channel switch with P-channel high-side enable.

IC Role / Device Role / Timing Role: N-ch handles high-current PWM switching; P-ch provides controlled power-up sequencing and overcurrent isolation.

Use Value: Shared thermal path in SO-8 allows coordinated thermal derating-enabling 3.2 A continuous N-ch current at T_A = 70°C.

Use Scenario: Reversible DC motor actuation for side mirror folding/unfolding functions.

IC Role / Device Role / Timing Role: Complementary N/P pair forms compact full-H-bridge with external logic; gate inputs accept standard automotive LIN or CAN-peripheral GPIO.

Use Value: Low R_DS(on) (0.05 Ω / 0.10 Ω) limits I²R heating during repeated 500-ms stall events per AEC functional safety requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD800N03L	Single N-channel 30 V, 8 A, R_DS(on) = 0.008 Ω - no integrated P-ch; requires external high-side driver.	Only suitable where high-side switching is implemented separately (e.g., with charge pump or isolated supply).	Select when higher current capability and lower R_DS(on) are prioritized over integration and board space.
SP8M8	Dual N-channel only (30 V, 4.5 A each); no P-ch; gate threshold 1.2–2.5 V; R_DS(on) = 0.045 Ω @ 10 V.	Limited to low-side or half-bridge with external high-side N-FET + level shifter.	Choose when system already uses N-ch-only topology and gate drive resources support level shifting.

Compared with IPD800N03L and SP8M8, AUIRF7309Q uniquely integrates matched N+P channels in one SO-8 package with automotive qualification, eliminating external level shifters and reducing BOM count-critical for space-constrained body control modules.

Availability

AUIRF7309Q is available at Aetrix Electronics and suitable for automotive door modules, LED lighting systems, HVAC blower controls, and mirror actuation circuits requiring stable component supply across production lifecycles.

Supply support for AUIRF7309Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The AUIRF7309Q belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for robust, thermally efficient bidirectional switching in 12 V vehicle subsystems.

FAQ

Is AUIRF7309Q pin-compatible with standard SO-8 dual MOSFETs like SI4946DY?

No. AUIRF7309Q uses a non-standard pinout: pins 1–3 are G1/S1/D1 (N-ch), pins 4–6 are G2/D2/S2 (P-ch), with pins 7–8 as drain extensions. SI4946DY assigns G/S/D for both channels differently, making direct replacement impossible without PCB redesign.

What is the maximum continuous current for the P-channel at 85°C ambient?

At T_A = 85°C, the P-channel continuous current is derated to approximately −1.8 A, calculated from its 3.0 A rating at 25°C and linear derating factor of 0.011 W/°C, considering R_DS(on) = 0.10 Ω and thermal resistance R_θJA = 90 °C/W.

Does AUIRF7309Q support 3.3 V microcontroller gate drive without external boosting?

Yes. With V_GS(th) ranging from −3.0 V to −1.0 V (P-ch) and +1.0 V to +3.0 V (N-ch), the device fully turns on using 3.3 V logic levels-no gate driver or level shifter required for either channel under typical load conditions.

How is the body diode utilized in reverse polarity protection designs?

The integrated N-channel body diode conducts during reverse battery connection, allowing current flow through S1→D1 while blocking reverse current at D2→S2. This enables single-device reverse-polarity protection in low-side configurations without adding external diodes or controllers.

AUIRF7309Q Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 4A, 3A

Rds On (Max) @ Id, Vgs:: 50mOhm @ 2.4A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 520pF @ 15V

Power - Max:: 1.4W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

AUIRF7309Q FAQ

1.How can I place an order for AUIRF7309Q through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7309Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7309Q reliable?

The price and inventory of AUIRF7309Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7309Q is usually 5 days.

3.What payment methods are accepted for AUIRF7309Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7309Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7309Q?

AUIRF7309Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7309Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7309Q?

For technical support, including AUIRF7309Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7309Q requirements.

6.How does Aetrix verify that AUIRF7309Q is sourced from the original manufacturer or authorized distributors?

All AUIRF7309Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7309Q meets industry standards.

7.What is the process for return or replacement of AUIRF7309Q?

All AUIRF7309Q units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7309Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7309Q part is unused and in its original packaging.

Return procedure for AUIRF7309Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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