Infineon Technologies AUIRF7309QTR

Overview

AUIRF7309QTR from Infineon is an automotive-qualified dual-channel power MOSFET in SO-8 package, integrating one N-channel (30 V, 4.7 A, R_DS(on) = 0.05 Ω @ 10 V) and one P-channel (−30 V, −3.5 A, R_DS(on) = 0.10 Ω @ −10 V) HEXFET device. It enables compact half-bridge and load-switch configurations in 12 V automotive systems such as body control modules and LED lighting drivers.

For engineers reviewing the AUIRF7309QTR datasheet, AUIRF7309QTR pinout, AUIRF7309QTR application, or AUIRF7309QTR equivalent, key selection criteria include logic-level gate drive compatibility (±20 V max), −55 °C to +150 °C junction temperature range, dual-channel thermal coupling, and automotive-grade dv/dt ruggedness (6.9 V/ns for N-ch).

Technical Context

This dual MOSFET implements independent N- and P-channel silicon dies in a single SO-8 package with shared thermal path. The N-channel supports 4.7 A pulsed drain current at 10 V gate drive, while the P-channel delivers −3.5 A under identical conditions - both rated for 150 °C operation and qualified per AEC-Q101.

Dynamic performance includes 6.8 ns turn-on delay (N-ch) and 11 ns (P-ch), with gate charge values of 25 nC each and reverse transfer capacitance of 72 pF (N-ch) / 93 pF (P-ch). Body diode recovery is characterized at 47–71 ns (N-ch) and 53–80 ns (P-ch) under 100 A/µs di/dt.

Key Specifications

Pinout & Package

Package: SO-8 (surface-mount, 150 °C rated, lead-free/RoHS compliant). Pin assignments verified per Infineon AUIRF7309Q datasheet Rev. 2.0 (2015-09-30).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.

Compared with IPB80P04P4L-02 and SP8M8F, AUIRF7309QTR uniquely provides matched N+P characteristics in one SO-8 package with automotive qualification, eliminating inter-device timing skew and simplifying PCB layout for half-bridge designs.

Availability

AUIRF7309QTR is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, engine bay fan regulation, and HVAC blower systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for AUIRF7309QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and qualification infrastructure.

AUIRF7309QTR belongs to the HEXFET® Automotive Power MOSFET product line, designed specifically for high-reliability 12 V vehicle subsystems requiring AEC-Q101 compliance, thermal robustness, and space-constrained packaging.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

The N-channel supports 3.2 A and the P-channel supports −2.4 A at T_A = 70 °C with PCB-mounted thermal conditions, based on linear derating from 4.0 A / −3.0 A at 25 °C using the 0.011 W/°C factor and R_θJA = 90 °C/W.

Can AUIRF7309QTR be used in a synchronous buck converter?

Yes - the N-channel serves as the efficient low-side switch (R_DS(on) = 0.05 Ω), while the P-channel can act as an active freewheeling device. Gate timing must prevent shoot-through; typical dead time is ≥100 ns per Infineon application note AN-994.

Is the SO-8 package thermally enhanced?

No - it uses standard SO-8 footprint with R_θJA = 90 °C/W under FR-4 PCB mounting. For higher power, Infineon recommends soldering exposed pad variants (not applicable here); thermal design must respect 1.4 W max power dissipation at 25 °C ambient.

Does the part include internal ESD protection?

Yes - it meets HBM ESD rating of ±100 nA gate leakage at ±20 V, and is qualified per AEC-Q101 which includes human-body model (HBM) testing to ≥2 kV, ensuring robustness during handling and assembly in automotive production lines.