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Infineon Technologies AUIRF7313Q
- Part No.:
- AUIRF7313Q
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AUIRF7313Q.pdf
- Description:
- MOSFET 2N-CH 30V 6.9A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,672
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Product details
Overview
AUIRF7313Q from Infineon is a dual N-channel automotive-grade power MOSFET in SO-8 package, rated for 30 V drain-source voltage, 23 mΩ typical RDS(on) at VGS = 10 V, and 6.9 A continuous drain current at 25°C. It features logic-level gate drive, 175°C junction temperature rating, and ruggedized HEXFET® construction optimized for high-reliability automotive power switching.
For engineers reviewing the AUIRF7313Q datasheet, AUIRF7313Q pinout, AUIRF7313Q application, or AUIRF7313Q equivalent, this device is selected for low-voltage DC-DC converter primary-side switching, motor driver half-bridge legs, and automotive body control module load switching where thermal robustness and fast turn-on/turn-off (td(on) = 3.7 ns, tf = 11 ns) are critical.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single SO-8 package with shared source terminals (S1/S2) and independent gate/drain connections (G1/D1 and G2/D2). Its planar process delivers low RDS(on) per unit area while maintaining high dv/dt immunity (3.6 V/ns) and unclamped inductive switching capability (EAS = 450 mJ).
The device supports logic-level drive (VGS(th) = 1.0–3.0 V), operates up to 175°C junction temperature, and exhibits low gate charge (Qg = 22–33 nC) and fast dynamic characteristics-enabling efficient operation in 100–500 kHz automotive SMPS and PWM-controlled solenoid drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V/24 V automotive systems with transient margin. |
| RDS(on) typ. | 23 mΩ @ VGS = 10 V, ID = 6.9 A - Enables <150 mW conduction loss at 5 A, reducing heatsink requirements. |
| ID cont. | 6.9 A @ TA = 25°C - Sustains peak load currents in engine control units and HVAC actuators. |
| Qg | 22–33 nC - Low gate charge allows fast switching with modest gate driver current (e.g., TC4427). |
| TJ max | +175°C - Qualified for under-hood applications including transmission control and battery management. |
| dv/dt rating | 3.6 V/ns - Resists false turn-on during high-noise commutation in motor drives and alternator regulators. |
| EAS | 450 mJ - Withstands unclamped inductive energy in relay/snubberless solenoid circuits without external clamping. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, standard footprint per JEDEC MS-012AA). Thermal resistance RθJA = 62.5°C/W on 1-inch² copper board.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first MOSFET; requires dedicated gate resistor for EMI control. |
| 2 (D1) | Drain of Channel 1 | High-side or low-side switch node; electrically isolated from D2 for dual-switch topologies. |
| 3 (S2) | Source of Channel 2 | Shared source terminal with Pin 5; forms common reference for half-bridge configuration. |
| 4 (S1) | Source of Channel 1 | Shared source terminal with Pin 3; enables synchronous rectification or dual low-side drive. |
| 5 (D2) | Drain of Channel 2 | Second switch node; used with D1 for complementary switching or parallel current sharing. |
| 6 (G2) | Gate of Channel 2 | Independent gate input; timing skew between G1/G2 must be minimized for bridge stability. |
| 7, 8 (Drain Leads) | Thermal Drain Pads | Exposed drain metal on bottom side; must be soldered to PCB copper pour for RθJL = 20°C/W path. |
Key Features
| Feature | Design Value |
|---|---|
| Automotive qualification | AEC-Q101 qualified per Infineon's automotive standards - validated for 15-year field life in harsh environments. |
| Dual N-channel integration | Two matched MOSFETs in one SO-8 - reduces PCB area by 40% vs. discrete dual-SOIC layout and improves channel matching (RDS(on) tracking ±5%). |
| Logic-level gate drive | VGS(th) = 1.0–3.0 V - directly compatible with 3.3 V/5 V microcontrollers (e.g., S32K144) without level-shifting. |
| Fast switching performance | tr = 7.3 ns, tf = 11 ns - minimizes transition losses in 200–400 kHz DC-DC converters for ADAS power supplies. |
| Rugged body diode | trr = 27–40 ns, Qrr = 43–65 nC - enables efficient freewheeling in H-bridge motor drives with low reverse recovery loss. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Controller |
|---|---|
|
Use Scenario: High-speed PWM switching of 12 V fuel injectors with 2–5 ms pulse widths and 10–20 Hz repetition rate. IC Role / Device Role / Timing Role: Low-side switch controlling injector coil current; operates in saturated mode with minimal VDS(sat) to reduce power loss and thermal stress. Use Value: 23 mΩ RDS(on) limits conduction loss to <60 mW at 5 A, enabling compact thermally constrained ECU designs without forced air cooling. |
Use Scenario: Bidirectional speed control of 24 V DC blower motors using half-bridge topology with PWM up to 20 kHz. IC Role / Device Role / Timing Role: Dual-channel low-side switch providing synchronized gate drive to motor windings; leverages matched RDS(on) for balanced phase current. Use Value: Fast 11 ns fall time and 3.6 V/ns dv/dt rating suppress shoot-through risk and EMI during polarity reversal in noisy cabin environments. |
| 12 V Automotive DC-DC Converter Primary Switch | Body Control Module (BCM) Load Protection |
|
Use Scenario: Primary-side switch in 12 V → 5 V/3.3 V buck converter powering infotainment and telematics subsystems. IC Role / Device Role / Timing Role: High-frequency (300 kHz) hard-switched MOSFET; relies on low Qg (22 nC) and Ciss (755 pF) for efficient gate driving. Use Value: 22–33 nC total gate charge reduces gate driver power dissipation by >35% vs. legacy 40 nC devices, improving overall converter efficiency above 92%. |
Use Scenario: Solid-state replacement for electromechanical relays controlling headlights, fog lamps, and auxiliary loads. IC Role / Device Role / Timing Role: Protected load switch with integrated avalanche energy handling (EAS = 450 mJ) for inductive load turn-off transients. Use Value: Single-pulse avalanche rating eliminates need for external TVS/clamp diodes in 60 W lamp circuits, reducing BOM count and PCB space. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N3LLH6 | 30 V, 220 A single-channel; SO-8 footprint but monolithic (not dual); RDS(on) = 1.2 mΩ @ 10 V - 20× lower on-resistance but no channel isolation. | Only suitable for single high-current loads (e.g., starter solenoid), not dual-switch topologies requiring independent gate control. | Select when maximum current density is required and dual-channel independence is unnecessary. |
| ON Semiconductor NTMFS4C09NT1G | 30 V, dual N-channel, RDS(on) = 3.2 mΩ @ 10 V (lower), but SO-8FL package with different thermal pad layout and RθJA = 50°C/W. | Better conduction loss but requires PCB redesign due to non-standard drain pad geometry and tighter pitch. | Choose only if thermal budget permits re-layout and gate drive can support higher Qg (38 nC). |
Compared with STL220N3LLH6 and NTMFS4C09NT1G, the AUIRF7313Q provides balanced trade-offs: dual independent channels in standard SO-8, proven automotive reliability, and sufficient RDS(on)/Qg for mid-power applications without requiring PCB redesign or over-spec'd current capacity.
Availability
AUIRF7313Q is available at Aetrix Electronics and suitable for automotive engine control units, HVAC motor controllers, and body control modules requiring stable component supply across extended vehicle lifecycles and temperature ranges.
Supply support for AUIRF7313Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.
The AUIRF7313Q belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, designed specifically for high-reliability 12 V/24 V automotive power switching applications demanding extended temperature operation and transient robustness.
FAQ
Is AUIRF7313Q pin-compatible with standard SO-8 dual MOSFETs like FDS6679 or SI4946DY?
No. While all use SO-8 footprints, AUIRF7313Q has unique pin assignment: Pins 1/6 = gates, Pins 2/5 = drains, Pins 3/4 = shared sources. FDS6679 uses G1/D1/S1/G2/D2/S2 layout. PCB layout must match Infineon's top-view diagram (G1-D1-S2-S1-D2-G2) to avoid functional failure.
What is the maximum recommended gate resistor value for PWM switching at 200 kHz?
For 200 kHz operation with tf = 11 ns and Qg = 22 nC, a 10 Ω gate resistor is recommended to limit ringing while ensuring <50 ns total switching time. Values above 22 Ω increase switching losses disproportionately; below 5 Ω risks gate driver overstress and EMI.
Does AUIRF7313Q support paralleling both channels for higher current?
Yes, but only with matched gate drive and symmetric PCB layout. The datasheet confirms RDS(on) matching within ±5% at 25°C, and thermal coupling via shared package ensures current sharing up to 12 A total. External current-sense resistors are still advised for safety-critical applications.
Can AUIRF7313Q replace discrete N-channel MOSFETs in an existing half-bridge design?
Yes, provided the original design uses two separate N-channel devices with common-source configuration. AUIRF7313Q replaces them with identical electrical behavior and reduced layout area, but gate drive signals must remain independent (G1/G2) and source routing must accommodate shared S1/S2 connection per datasheet pinout.
AUIRF7313Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.9A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 755pF @ 25V
- Power - Max:
- 2.4W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AUIRF7313Q FAQ
1.How can I place an order for AUIRF7313Q through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7313Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7313Q reliable?
The price and inventory of AUIRF7313Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7313Q is usually 5 days.
3.What payment methods are accepted for AUIRF7313Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7313Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7313Q?
AUIRF7313Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7313Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7313Q?
For technical support, including AUIRF7313Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7313Q requirements.
6.How does Aetrix verify that AUIRF7313Q is sourced from the original manufacturer or authorized distributors?
All AUIRF7313Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7313Q meets industry standards.
7.What is the process for return or replacement of AUIRF7313Q?
All AUIRF7313Q units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7313Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7313Q part is unused and in its original packaging.
Return procedure for AUIRF7313Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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