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Infineon Technologies AUIRF7313QTR
- Part No.:
- AUIRF7313QTR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AUIRF7313QTR.pdf
- Description:
- MOSFET 2N-CH 30V 6.9A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:9,003
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Product details
Overview
AUIRF7313QTR from Infineon is a dual N-channel automotive-grade power MOSFET in SO-8 package, rated for 30 V VDS, 6.9 A continuous drain current at 25°C, and 23 mΩ typical RDS(on) at VGS = 10 V. It features logic-level gate drive (VGS(th) = 1.0–3.0 V), 175°C junction operation, and ruggedized HEXFET® construction for high-reliability engine control and body electronics switching.
For engineers reviewing the AUIRF7313QTR datasheet, AUIRF7313QTR pinout, AUIRF7313QTR application, or AUIRF7313QTR equivalent, key selection criteria include its dual-channel configuration, SO-8 thermal performance (RθJA = 62.5°C/W), avalanche energy rating (450 mJ), fast switching (tr = 7.3 ns), and automotive qualification per AEC-Q101.
Technical Context
This dual N-channel MOSFET integrates two identical silicon cells in a single SO-8 package with shared thermal path and independent gate terminals. Each channel supports 30 V breakdown, 23 mΩ on-resistance at 10 V gate drive, and operates up to 175°C junction temperature - enabling compact half-bridge or load-switch designs in constrained automotive PCB layouts.
The device exhibits dynamic dv/dt immunity (3.6 V/ns), unclamped inductive switching capability (EAS = 450 mJ), and body diode recovery characteristics (trr = 27–40 ns, Qrr = 43–65 nC) optimized for synchronous rectification and PWM motor control where reverse recovery robustness is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 12 V automotive systems with transient spikes up to ISO 7637-2 Pulse 5a. |
| RDS(on) typ. | 23 mΩ @ VGS = 10 V, ID = 6.9 A - Enables <1.6 W conduction loss per channel at full rated current, reducing heatsink requirements. |
| ID cont. | 6.9 A @ TA = 25°C - Dual-channel rating allows independent 6.9 A loads or combined 13.8 A sourcing with proper layout and thermal management. |
| VGS(th) | 1.0–3.0 V - Logic-level threshold enables direct drive from 3.3 V or 5 V microcontrollers without gate drivers in low-speed applications. |
| EAS | 450 mJ - Single-pulse avalanche energy rating supports reliable operation during inductive load turn-off transients in solenoid or relay drivers. |
| tr/tf | 7.3 ns / 11 ns - Fast edge rates reduce switching losses in 20–100 kHz PWM applications such as LED dimming and fan speed control. |
| TJ max | +175°C - Extended junction temperature range ensures functional stability in under-hood environments including engine bay ECUs. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin small-outline integrated circuit), 4.9 mm × 6.0 mm footprint, 1.75 mm height, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Channel 1 | Independent control input for first N-channel MOSFET; requires 10 V for full enhancement, compatible with standard logic outputs. |
| 2 (S1) | Source of Channel 1 | Power return node for Channel 1; electrically isolated from S2 unless externally connected; used for current sensing or low-side switching reference. |
| 3 (D1) | Drain of Channel 1 | High-side power output terminal for Channel 1; internally bonded to lead frame for low-inductance, high-current routing. |
| 4 (D1) | Drain of Channel 1 (common drain pad) | Exposed drain paddle (pins 3 & 4 tied internally); primary thermal path to PCB copper; must be soldered to thermal pad for RθJA compliance. |
| 5 (D2) | Drain of Channel 2 | High-side power output terminal for Channel 2; shares same exposed paddle as D1 for symmetrical thermal dissipation. |
| 6 (S2) | Source of Channel 2 | Power return node for Channel 2; separate from S1 to support independent load control or floating half-bridge configurations. |
| 7 (G2) | Gate of Channel 2 | Independent control input for second N-channel MOSFET; identical electrical characteristics to G1 for matched timing and drive requirements. |
| 8 (D2) | Drain of Channel 2 (common drain pad) | Second connection to shared drain paddle; completes dual-drain thermal and current-carrying structure for parallel high-current paths. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel topology | Two fully independent 30 V/6.9 A MOSFETs in one SO-8 package - reduces board area by ~40% vs. discrete dual-SOIC solution and improves channel matching. |
| Logic-level gate drive | VGS(th) down to 1.0 V enables direct interface with 3.3 V MCUs (e.g., Infineon AURIX™ or NXP S32K) without level-shifting or external drivers in low-frequency control. |
| Automotive qualification | AEC-Q101 qualified with 175°C TJ rating - validated for engine control modules, transmission solenoids, and ADAS power stages requiring long-term reliability under thermal cycling. |
| Ruggedized HEXFET® design | Dynamic dv/dt rating of 3.6 V/ns and 450 mJ avalanche energy - sustains repetitive inductive switching stress in fuel injector or ABS valve drivers without derating. |
| Thermally enhanced SO-8 | Exposed drain paddle (pins 3/4/5/8) provides low RθJL (20°C/W) to PCB - achieves 2.4 W power dissipation at 25°C ambient when using 1-inch² copper pour. |
Applications
| Engine Control Unit (ECU) | Body Control Module (BCM) |
|---|---|
|
Use Scenario: Driving 12 V solenoid valves for variable valve timing (VVT) and exhaust gas recirculation (EGR) systems. IC Role / Device Role / Timing Role: Low-side switch controlling pulsed DC current (up to 6 A) with 20–50 Hz PWM frequency and <10 µs dead-time requirements. Use Value: Dual-channel integration allows simultaneous control of intake/exhaust VVT actuators on single IC; 23 mΩ RDS(on) limits self-heating to <1.2 W per channel at full load. |
Use Scenario: Managing power distribution to door lock actuators, window lift motors, and mirror adjustment circuits. IC Role / Device Role / Timing Role: High-side load switch providing overcurrent protection and controlled ramp-up via gate slew rate limiting. Use Value: Independent gate terminals (G1/G2) enable staggered turn-on to limit inrush current across multiple loads; 175°C rating ensures operation near HVAC ducts. |
| Advanced Driver Assistance Systems (ADAS) | Electric Power Steering (EPS) |
|
Use Scenario: Supplying regulated 5 V/3.3 V bias rails for radar sensor front-ends and camera image signal processors. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter stage operating at 300–500 kHz switching frequency. Use Value: Fast tr/tf (7.3 ns/11 ns) and low Qgd (6.8–10 nC) minimize switching losses; body diode trr (27–40 ns) prevents shoot-through in synchronous mode. |
Use Scenario: Controlling three-phase inverter bridge for brushless DC assist motor (1–3 kW range). IC Role / Device Role / Timing Role: Half-bridge high-side driver in leg configuration, paired with external low-side FETs and bootstrap gate drive. Use Value: Dual-channel layout supports compact half-bridge per phase; SO-8 thermal pad enables direct mounting to aluminum heat spreader in EPS motor housing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF30L | Single-channel 30 V/16 A MOSFET in TO-220; higher RDS(on) (45 mΩ), no logic-level drive (VGS(th) = 2–4 V), no AEC-Q101 certification. | Requires external gate driver and heatsink; unsuitable for space-constrained ECU modules or dual-load control. | Select only for cost-sensitive non-automotive industrial loads where SO-8 footprint and qualification are not required. |
| ON Semiconductor NTMFS4C09NT1G | Dual N-channel 30 V/12.5 A in PowerSO-8; lower RDS(on) (3.9 mΩ @ 10 V), but VGS(th) = 1.2–2.5 V and TJ max = 150°C. | Better efficiency at high current, but reduced thermal margin for under-hood use above 125°C ambient. | Prefer for high-efficiency BCM power distribution where peak ambient stays below 105°C; avoid in engine compartment placements. |
Compared with STP16NF30L and NTMFS4C09NT1G, AUIRF7313QTR uniquely balances dual-channel integration, AEC-Q101 compliance, logic-level drive, and 175°C operation - making it optimal for compact, thermally demanding automotive control nodes where reliability and board area are co-constrained.
Availability
AUIRF7313QTR is available at Aetrix Electronics and suitable for engine control units, body control modules, and ADAS power supplies requiring stable component supply, long-lifecycle support, and automotive-grade traceability.
Supply support for AUIRF7313QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certifications including IATF 16949.
AUIRF7313QTR belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-reliability switching in engine, chassis, and safety-critical vehicle subsystems.
FAQ
Is AUIRF7313QTR pin-compatible with other SO-8 dual N-channel MOSFETs?
No - AUIRF7313QTR uses a proprietary pinout where pins 3/4 and 5/8 are common drain pads for each channel, unlike standard dual-gate SO-8 layouts. Its pin assignment (G1-S1-D1-D1-D2-S2-G2-D2) requires dedicated PCB layout and cannot substitute for generic dual MOSFETs without redesign.
What is the maximum recommended gate resistor value for PWM switching at 100 kHz?
For 100 kHz PWM with minimal switching loss, a gate resistor of 6.8 Ω is validated in the datasheet (td(off) = 21 ns, tf = 11 ns). Values above 15 Ω increase turn-off time disproportionately and risk shoot-through in half-bridge configurations; values below 2.2 Ω require careful layout to avoid ringing.
Does AUIRF7313QTR support bidirectional current flow in H-bridge configurations?
No - as a dual N-channel MOSFET without integrated charge pump or level shifter, it cannot function as a high-side switch in standard H-bridge topologies. It is designed for low-side switching or half-bridge configurations with external high-side drivers and bootstrap circuitry.
Can the exposed drain paddle be left unconnected for low-power test setups?
No - the exposed drain paddle (pins 3/4/5/8) is electrically connected to both drains and serves as the primary thermal and current path. Leaving it unconnected violates SO-8 mechanical and thermal specifications, risks thermal runaway above 0.5 W, and voids AEC-Q101 qualification compliance.
AUIRF7313QTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.9A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 6.9A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 755pF @ 25V
- Power - Max:
- 2.4W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AUIRF7313QTR FAQ
1.How can I place an order for AUIRF7313QTR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7313QTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7313QTR reliable?
The price and inventory of AUIRF7313QTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7313QTR is usually 5 days.
3.What payment methods are accepted for AUIRF7313QTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7313QTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7313QTR?
AUIRF7313QTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7313QTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7313QTR?
For technical support, including AUIRF7313QTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7313QTR requirements.
6.How does Aetrix verify that AUIRF7313QTR is sourced from the original manufacturer or authorized distributors?
All AUIRF7313QTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7313QTR meets industry standards.
7.What is the process for return or replacement of AUIRF7313QTR?
All AUIRF7313QTR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7313QTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7313QTR part is unused and in its original packaging.
Return procedure for AUIRF7313QTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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