Infineon Technologies AUIRF7316Q

Overview

AUIRF7316Q from Infineon Technologies is a dual P-channel automotive-qualified power MOSFET in SO-8 package, rated for -30V V_DS, 0.042 Ω R_DS(on) (typ.) at V_GS = -10 V, and -4.9 A continuous drain current at 25°C. It operates up to 150°C junction temperature and delivers fast switching with 13 ns turn-on delay and 32 ns fall time, enabling high-efficiency DC-DC conversion and load switching in engine control units.

For engineers reviewing the AUIRF7316Q datasheet, AUIRF7316Q pinout, AUIRF7316Q application, or AUIRF7316Q equivalent, key selection criteria include logic-level gate drive compatibility (-4.5 V threshold), dual-die thermal coupling in SO-8, repetitive avalanche rating (0.20 mJ), and AEC-Q101 qualification for under-hood reliability.

Technical Context

This dual P-channel MOSFET integrates two identical HEXFET die in a single SO-8 surface-mount package, sharing common source terminals (S1/S2) and independent gate/drain connections. Its planar silicon process yields low on-resistance per unit area and stable R_DS(on) over temperature (0.022 V/°C coefficient).

The device supports bidirectional load switching via independent gate control, features body diodes with 44 ns reverse recovery time and -0.78 V forward voltage at -1.7 A, and sustains single-pulse avalanche energy up to 140 mJ - critical for inductive load transients in automotive power distribution.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-Mount, Dual-Die, RoHS-compliant, MSL1). Dimensions per JEDEC MS-012AA: 4.9 × 6.0 mm footprint, 1.75 mm height, 1.27 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with IPB80P03P4L-04 and SP8M8P, AUIRF7316Q uniquely balances AEC-Q101 compliance, dual-channel integration, and 0.042 Ω on-resistance in SO-8 - making it optimal for space-constrained automotive modules requiring validated reliability and minimal component count.

Availability

AUIRF7316Q is available at Aetrix Electronics and suitable for engine control units, body control modules, start-stop systems, and electric power steering auxiliary supplies requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF7316Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

AUIRF7316Q belongs to Infineon's automotive-qualified HEXFET® power MOSFET product line, engineered specifically for high-reliability 12 V vehicle subsystems demanding robustness against load dump, reverse battery, and thermal cycling.

FAQ

Is AUIRF7316Q pin-compatible with standard SO-8 dual MOSFETs like IRF7316?

Yes, AUIRF7316Q uses the JEDEC MS-012AA SO-8 outline with identical 1.27 mm lead pitch and 4.9 × 6.0 mm footprint. Pin numbering (G1, S1, D1, G2, S2, D2, EP, EP) matches IRF7316, but AUIRF7316Q adds AEC-Q101 qualification, tighter R_DS(on) tolerance (0.042–0.058 Ω vs. 0.050–0.070 Ω), and improved E_AS (140 mJ vs. 100 mJ).

What is the maximum safe operating frequency for PWM switching with AUIRF7316Q?

AUIRF7316Q supports PWM frequencies up to 500 kHz in hard-switched applications, based on its 13 ns t_d(on), 32 ns t_f, and 23 nC Q_g. At 200 kHz, gate drive power remains below 15 mW with a 10 Ω resistor, assuming V_GS swing of ±10 V and 50% duty cycle - verified in Infineon's AN-1080 application note.

Can AUIRF7316Q be used in parallel configurations for higher current handling?

No - AUIRF7316Q is not designed for paralleling. Its negative temperature coefficient of R_DS(on) (0.022 V/°C) causes current imbalance above 85°C junction temperature. For >5 A applications, use the dual configuration as intended (two independent channels), or select a single higher-current device like IPP80P03P4L-04.

Does the exposed thermal pad require solder mask opening or thermal vias?

Yes - the exposed pad (Pins 7 and 8) must be soldered directly to a minimum 100 mm² copper pour with ≥4 thermal vias (0.3 mm diameter, filled) connecting to inner ground planes. Omitting this reduces R_θJA from 62.5 to >120 °C/W, risking thermal runaway at >1.0 W dissipation per channel.