Infineon Technologies AUIRF7316QTR

Overview

AUIRF7316QTR from Infineon Technologies is a dual P-channel automotive-grade power MOSFET in SO-8 package, rated for -30 V V_DS, 0.042 Ω R_DS(on) (typ.) at V_GS = -10 V, and -4.9 A continuous drain current at 25°C. It operates up to 150°C junction temperature and delivers fast switching with 13 ns turn-on delay and 32 ns fall time, serving as a high-efficiency synchronous rectifier or load switch in 12 V automotive power rails.

For engineers reviewing the AUIRF7316QTR datasheet, AUIRF7316QTR pinout, AUIRF7316QTR application, or AUIRF7316QTR equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = -1.0 to -3.0 V), dual-die SO-8 thermal performance (R_θJA = 62.5 °C/W), and AEC-Q101 qualification for under-hood use.

Technical Context

This dual P-channel MOSFET integrates two identical HEXFET die in a single SO-8 surface-mount package, sharing common source terminals (S1/S2) and independent gate/drain connections. Its planar process enables low on-resistance per silicon area and robust repetitive avalanche capability (E_AR = 0.20 mJ).

The device supports logic-level drive with gate threshold voltage spanning -1.0 V to -3.0 V and exhibits low dynamic losses: Q_g = 23–34 nC, Q_gd = 5.9–8.9 nC, and C_iss = 710 pF - enabling efficient operation in DC-DC converters and motor control H-bridges where bidirectional blocking and fast commutation are required.

Key Specifications

Pinout & Package

SO-8 surface-mount package with exposed drain pads for enhanced thermal dissipation. Dual P-channel configuration features independent gate/drain pairs and shared source terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with SPB04N60C3 and IPB80P04P4L-04, AUIRF7316QTR uniquely combines dual P-channel topology, SO-8 footprint, logic-level drive, and AEC-Q101 qualification - making it irreplaceable for compact, thermally constrained, dual-load automotive power management.

Availability

AUIRF7316QTR is available at Aetrix Electronics and suitable for automotive body control modules, 12 V DC-DC synchronous rectifiers, and reverse battery protection circuits requiring stable component supply across production lifecycles.

Supply support for AUIRF7316QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

AUIRF7316QTR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V power distribution in harsh-temperature vehicle environments.

FAQ

Is AUIRF7316QTR suitable for reverse battery protection?

Yes. Its dual P-channel structure allows back-to-back configuration with zero forward voltage drop in normal operation and complete blocking of reverse polarity. The -30 V V_DS rating withstands typical automotive transients, and AEC-Q101 qualification ensures reliability under repeated reverse-connect cycles.

What is the maximum continuous current at 85°C ambient?

At T_A = 85°C, the device supports -2.8 A continuous drain current per channel (derated from -4.9 A at 25°C), based on thermal limits and R_θJA = 62.5 °C/W. This assumes FR-4 board mounting with adequate copper pour and still-air conditions.

Does AUIRF7316QTR require a gate resistor for driving with a microcontroller?

A gate resistor is recommended but not strictly required. With Q_g = 23–34 nC and typical MCU GPIO drive strength (~20 mA), a 10–22 Ω resistor limits peak current and suppresses ringing. It also prevents shoot-through in H-bridge configurations when paired with complementary N-channel devices.

How does the SO-8 package handle thermal dissipation in enclosed automotive enclosures?

The SO-8 package uses exposed drain pads soldered to PCB copper planes, achieving R_θJA = 62.5 °C/W on FR-4. In enclosed environments, adding 1–2 cm² of 2-oz copper per drain pad reduces effective R_θJA to ~45 °C/W, supporting >3.5 A continuous operation at 85°C ambient without forced air.