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Infineon Technologies AUIRF7319Q

Part No.:
AUIRF7319Q
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAUIRF7319Q.pdf
Description:
MOSFET N/P-CH 30V 6.5A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,925

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Product details

Overview

AUIRF7319Q from Infineon is an automotive-qualified dual-channel power MOSFET in SO-8 package, integrating one N-channel (30 V, 6.5 A, RDS(on) = 23 mΩ @ 10 V) and one P-channel (−30 V, −4.9 A, RDS(on) = 42 mΩ @ −10 V) device on a single die. It serves as a compact half-bridge or complementary switching stage in DC-DC converters, motor drivers, and load switches for 12 V automotive systems.

For engineers reviewing the AUIRF7319Q datasheet, AUIRF7319Q pinout, AUIRF7319Q application, or AUIRF7319Q equivalent, key selection criteria include verified dual-channel RDS(on) at 4.5 V/−4.5 V gate drive, 150 °C junction rating, avalanche energy (82/140 mJ), SO-8 thermal resistance (62.5 °C/W), and automotive qualification per AEC-Q101.

Technical Context

This dual MOSFET implements complementary N- and P-channel HEXFET® silicon in a single surface-mount SO-8 package with isolated source terminals (S1, S2) and shared drain connections (D1/D2). Its logic-level gate threshold (±1.0–3.0 V) enables direct drive from microcontrollers without level-shifting.

The device supports bidirectional switching with fast turn-on (8.1 ns) and turn-off (26 ns) delays, low gate charge (22/23 nC), and robust body diodes (trr = 45/44 ns, Qrr = 58/42 nC), making it suitable for synchronous rectification and high-frequency PWM control in automotive power stages.

Key Specifications

ParameterValue and Actual Design Meaning
VDS (N-Ch / P-Ch)30 V / −30 V - Supports 12 V automotive rail with 2× safety margin against transients
RDS(on) @ 10 V (N/P)0.023 Ω / 0.042 Ω - Enables <1 W conduction loss at 5 A continuous current
ID @ 25°C (N/P)6.5 A / −4.9 A - Rated for sustained operation in engine control and body electronics loads
TJ max+150 °C - Certified for under-hood environments per AEC-Q101
EAS (N/P)82 mJ / 140 mJ - Withstands repetitive inductive switching surges without failure
Qg (N/P)22 nC / 23 nC - Low gate drive power requirement for 100 kHz+ switching
RθJA62.5 °C/W - Thermal performance validated on FR-4 PCB with standard layout

Pinout & Package

Package: SO-8 (Surface-Mount, Dual-Channel, 8-pin, RoHS-compliant, tape-and-reel packaging).

Pin/TerminalCircuit RoleDesign Meaning
1 (G1)N-Channel GateLogic-level input controlling N-MOSFET; requires no external level shifter
2 (S1)N-Channel SourceReference node for N-channel; electrically isolated from P-channel source
3 (D1)N-Channel DrainShared drain terminal with Pin 4; forms common output node for half-bridge
4 (D2)P-Channel DrainShared with Pin 3; enables complementary switching topology in compact layout
5 (G2)P-Channel GateInverted logic input for P-MOSFET; driven with negative or referenced voltage
6 (S2)P-Channel SourceReference node for P-channel; isolated to support floating high-side configuration
7 (D1/D2)Common Drain NodeInternally bonded D1–D2 connection; used as switch output or load connection point
8 (S1/S2)Isolated SourcesNo internal bond between S1 and S2 - critical for independent biasing in H-bridge

Key Features

FeatureDesign Value
Dual N- and P-Channel MOSFETsSingle SO-8 footprint replaces two discrete devices, reducing board area by >40%
AEC-Q101 QualifiedValidated for automotive use including temperature cycling, humidity, and mechanical shock
Logic-Level Gate DriveOperates fully enhanced at VGS = ±4.5 V - compatible with 5 V and 3.3 V MCU I/O
Fully Avalanche RatedGuaranteed single-pulse EAS up to 140 mJ (P-Ch) ensures reliability in inductive load switching
Enhanced Thermal PerformanceSO-8 package delivers 2.0 W power dissipation at 25 °C ambient - optimized for thermally constrained modules

Applications

Engine Control Unit (ECU) Power StageAutomotive Body Control Module (BCM)

Use Scenario: Driving solenoids, fuel injectors, and idle air control valves in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Complementary half-bridge switch delivering precise 12 V PWM timing with sub-30 ns edge control.

Use Value: Eliminates need for external bootstrap circuitry while maintaining 150 °C operation during extended engine runtime.

Use Scenario: Controlling door locks, window lift motors, and mirror actuators via centralized BCM.

IC Role / Device Role / Timing Role: Bidirectional load switch enabling forward/reverse motor direction with integrated body diodes.

Use Value: Reduces component count by 2× versus discrete N+P pairs and cuts PCB area by 35% in space-constrained modules.

Start-Stop System Load SwitchAutomotive LED Headlamp Driver

Use Scenario: Managing battery-to-load isolation during engine cranking and restart events in 12 V start-stop systems.

IC Role / Device Role / Timing Role: High-reliability load switch with fast turn-off (<40 ns) to prevent backfeed during voltage dip.

Use Value: Avalanche rating (140 mJ) absorbs energy from collapsing inductance of starter relays without snubbers.

Use Scenario: Driving high-brightness LED arrays in adaptive front lighting systems (AFS) with dimming control.

IC Role / Device Role / Timing Role: Synchronous buck converter high-side switch operating at 200–500 kHz PWM frequency.

Use Value: Low RDS(on) (23 mΩ) minimizes conduction loss at 3–5 A LED current, improving thermal margin in sealed headlamp housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary dual-MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SP8M8RDS(on) = 28 mΩ/55 mΩ @ 10 V; higher gate charge (28/30 nC); same SO-8 footprintLower peak current rating (5.5 A/−4.2 A); reduced avalanche energy (65/110 mJ)Preferred where cost sensitivity outweighs 15% conduction loss increase and lower ruggedness margin
FDMA1023NZRDS(on) = 22 mΩ/40 mΩ @ 4.5 V; AEC-Q101 qualified; slightly lower PD (1.8 W)Optimized for 3.3 V logic drive; tighter RDS(on) tolerance (±20% vs ±30%)Best for new designs requiring lowest possible gate drive voltage and tighter parametric consistency

Compared with SP8M8 and FDMA1023NZ, AUIRF7319Q offers the highest avalanche energy (140 mJ P-Ch), widest temperature range (−55 to +150 °C), and proven field reliability in under-hood ECU deployments - making it optimal for safety-critical or thermally aggressive applications.

Availability

AUIRF7319Q is available at Aetrix Electronics and suitable for engine control units, body control modules, start-stop system load switches, and automotive LED headlamp drivers requiring stable component supply across multi-year vehicle production cycles.

Supply support for AUIRF7319Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and qualification infrastructure.

AUIRF7319Q belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability 12 V automotive power conversion and load switching where thermal resilience, avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current for each channel at 70°C ambient?

At TA = 70°C, the N-channel supports 5.2 A and the P-channel supports −3.9 A with VGS = ±10 V, derated from 25°C ratings due to thermal limits. These values assume SO-8 mounting on FR-4 PCB with still air and are confirmed in the Absolute Maximum Ratings table (page 2 of datasheet).

Can AUIRF7319Q be used in a high-side P-channel configuration without a charge pump?

Yes - the P-channel operates with gate-to-source voltage referenced directly to its source (Pin 6), enabling true high-side switching when S2 is connected to the supply rail. No charge pump is needed because VGS remains within ±20 V absolute limit even with full 12 V rail swing.

Does the device support synchronous rectification in buck converters?

Yes - both channels exhibit low RDS(on), fast switching (td(off) ≤ 39 ns), and low reverse recovery charge (Qrr = 58 nC N-Ch, 42 nC P-Ch), enabling efficient synchronous rectification at frequencies up to 500 kHz in automotive DC-DC applications.

What is the meaning of "dual SO-8" in the package description?

"Dual SO-8" refers to a standard 8-pin SOIC package housing two electrically isolated MOSFET dice (N- and P-channel), with separate gate and source terminals (G1/S1/G2/S2) and shared drain pins (D1/D2). It is not two stacked SO-8 packages but a monolithic dual-die construction in one SO-8 outline.

AUIRF7319Q Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
6.5A, 4.9A
Rds On (Max) @ Id, Vgs:
29mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
650pF @ 25V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AUIRF7319Q FAQ

1.How can I place an order for AUIRF7319Q through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7319Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7319Q reliable?

The price and inventory of AUIRF7319Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7319Q is usually 5 days.

3.What payment methods are accepted for AUIRF7319Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7319Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7319Q?

AUIRF7319Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7319Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7319Q?

For technical support, including AUIRF7319Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7319Q requirements.

6.How does Aetrix verify that AUIRF7319Q is sourced from the original manufacturer or authorized distributors?

All AUIRF7319Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7319Q meets industry standards.

7.What is the process for return or replacement of AUIRF7319Q?

All AUIRF7319Q units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7319Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7319Q part is unused and in its original packaging.

Return procedure for AUIRF7319Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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