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Infineon Technologies AUIRF7319QTR
- Part No.:
- AUIRF7319QTR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AUIRF7319QTR.pdf
- Description:
- MOSFET N/P-CH 30V 6.5A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:7,347
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Product details
Overview
AUIRF7319QTR from Infineon is an automotive-qualified dual-channel power MOSFET in SO-8 package, integrating one N-channel (30 V, 6.5 A, RDS(on) = 0.023 Ω @ 10 V) and one P-channel (−30 V, −4.9 A, RDS(on) = 0.042 Ω @ −10 V) device on a single die. It operates up to 150 °C junction temperature and supports logic-level gate drive for direct microcontroller interfacing in half-bridge or load-switch configurations.
For engineers reviewing the AUIRF7319QTR datasheet, AUIRF7319QTR pinout, AUIRF7319QTR application, or AUIRF7319QTR equivalent, key selection criteria include dual-channel complementary conduction capability, avalanche-rated ruggedness (EAS = 82 mJ / 140 mJ), thermal resistance (RθJA = 62.5 °C/W), and automotive-grade qualification per AEC-Q101.
Technical Context
This dual MOSFET implements complementary N- and P-channel HEXFET® silicon in a single SO-8 surface-mount package, enabling compact high-side/low-side switching without external level-shifting. Its planar process delivers low RDS(on) at both 10 V and 4.5 V gate drive, supporting 3.3 V and 5 V logic systems.
The device features fully rated unclamped inductive switching (UIS) capability, with separate avalanche energy ratings (82 mJ N-ch, 140 mJ P-ch) and fast diode recovery (trr = 45 ns / 44 ns). Its ±20 V gate rating and −55 °C to +150 °C operating range support robust operation in automotive engine control and body electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | N-ch: 30 V; P-ch: −30 V - supports 24 V automotive rail with margin for transients |
| RDS(on) @ VGS = 10 V | N-ch: 0.023 Ω; P-ch: 0.042 Ω - enables <1 W conduction loss at 5 A continuous |
| ID Continuous @ 25°C | N-ch: 6.5 A; P-ch: −4.9 A - sufficient for medium-power motor drivers and DC-DC sync rectifiers |
| Qg Total Gate Charge | N-ch: 22 nC; P-ch: 23 nC - allows efficient switching at >100 kHz with moderate gate driver strength |
| trr Reverse Recovery Time | N-ch: 45 ns; P-ch: 44 ns - minimizes shoot-through risk in synchronous buck converters |
| TJ Operating Range | −55 °C to +150 °C - qualified for under-hood automotive environments |
| EAS Avalanche Energy | N-ch: 82 mJ; P-ch: 140 mJ - withstands inductive turn-off stress without external snubbers |
Pinout & Package
Package: SO-8 surface-mount, dual-die configuration with exposed drain pads for enhanced thermal performance. Mounting requires FR-4 PCB with recommended copper pour per Infineon layout guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | N-channel gate | Logic-level input for N-MOSFET; accepts 3.3 V/5 V drive directly |
| 2 (S1) | N-channel source | Common source node for N-ch; connects to ground or low-side return path |
| 3 (D1) | N-channel drain | High-current output terminal; internally bonded to exposed pad for thermal conduction |
| 4 (D1) | N-channel drain (tie) | Second connection to same N-ch drain; improves current sharing and thermal spreading |
| 5 (D2) | P-channel drain | Shared drain node with N-ch drain - enables common-drain (high-side switch) topology |
| 6 (S2) | P-channel source | Connects to supply rail in high-side switch; defines voltage reference for P-ch gate |
| 7 (G2) | P-channel gate | Inverted logic input; driven low to turn on P-MOSFET in high-side configuration |
| 8 (D2) | P-channel drain (tie) | Second connection to shared drain; ensures low-inductance, high-current path |
Key Features
| Feature | Design Value |
|---|---|
| Dual N+P channel integration | Eliminates board space and layout complexity of discrete half-bridge; enables true complementary switching |
| AEC-Q101 qualification | Validated for automotive applications including engine control, lighting, and ADAS power stages |
| Logic-level gate drive | Turns on fully at VGS = 4.5 V (N-ch RDS(on) = 0.032 Ω; P-ch RDS(on) = 0.076 Ω), compatible with standard MCU GPIO |
| Enhanced avalanche ruggedness | Rated for repetitive UIS events - reduces need for external clamping in inductive loads |
| Thermally optimized SO-8 | Exposed drain pads lower RθJA to 62.5 °C/W (PCB mounted), enabling higher sustained current in constrained spaces |
Applications
| Automotive Body Control Module (BCM) | Automotive LED Headlamp Driver |
|---|---|
Use Scenario: Controlling door locks, window lifts, and mirror actuators via PWM-driven H-bridge circuits. IC Role / Device Role / Timing Role: Dual-channel MOSFET provides bidirectional motor drive with integrated N/P pair eliminating external level shifters. Use Value: Reduces BOM count by 2× vs. discrete solutions while maintaining 150 °C operation in sealed modules. | Use Scenario: High-efficiency constant-current dimming of automotive LED arrays using synchronous buck topology. IC Role / Device Role / Timing Role: N-channel acts as sync rectifier; P-channel serves as high-side switch for current sensing and fault isolation. Use Value: Low RDS(on) and fast trr minimize conduction and switching losses, improving thermal margin at 100 kHz operation. |
| Automotive HVAC Blower Motor Control | Automotive Rear Combination Lamp Driver |
Use Scenario: Variable-speed blower motor control in climate systems using 12 V/24 V battery-supplied PWM inverters. IC Role / Device Role / Timing Role: N/P pair forms half-bridge leg driving brushed DC motor; body diodes enable freewheeling during PWM off-time. Use Value: Avalanche rating absorbs inductive kickback without snubber, simplifying EMC design and improving reliability. | Use Scenario: Sequential turn signal and brake light activation with independent brightness control per filament. IC Role / Device Role / Timing Role: P-channel high-side switch enables load-grounded architecture; N-channel handles low-side current sensing and PWM modulation. Use Value: Logic-level drive allows direct interface with CAN/LIN transceiver I/O, reducing system-level component count. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB80P04P4L-02 | P-channel only, TO-263 package, RDS(on) = 3.8 mΩ @ −10 V, no integrated N-ch | Requires external N-MOSFET for half-bridge; larger footprint and higher layout complexity | Select when higher current (>80 A) and thermal mass are needed, not for space-constrained dual-channel use |
| SP8M8F | Dual N+N configuration (not complementary), SO-8, RDS(on) = 12.5 mΩ each @ 4.5 V | Not suitable for high-side switching; limited to low-side parallel or dual low-side topologies | Choose only for dual N-ch applications like dual motor phases or redundant low-side switches |
Compared with IPB80P04P4L-02 and SP8M8F, AUIRF7319QTR uniquely delivers matched N+P characteristics in a single SO-8 footprint-enabling compact, self-contained half-bridge designs without external level shifters or discrete pairing, critical for automotive ECU miniaturization.
Availability
AUIRF7319QTR is available at Aetrix Electronics and suitable for automotive body control modules, LED headlamp drivers, HVAC blower motor controllers, and rear combination lamp systems requiring stable component supply across extended temperature and lifecycle requirements.
Supply support for AUIRF7319QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
AUIRF7319QTR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, designed specifically for high-reliability, thermally demanding power switching in engine compartments and vehicle lighting systems.
FAQ
What is the maximum continuous drain current for each channel at 70°C ambient?
At TA = 70°C, the N-channel supports 5.2 A and the P-channel supports −3.9 A with VGS = ±10 V, derated from 25°C values due to thermal limits. These ratings assume FR-4 PCB mounting with adequate copper area and still-air conditions per datasheet test setup.
Does AUIRF7319QTR require a gate resistor for safe operation?
A gate resistor (typically 5–20 Ω) is recommended to dampen ringing and limit peak gate current during switching. While not strictly required for DC operation, it prevents oscillation and EMI in high-frequency PWM applications, especially given the device's 22–23 nC total gate charge and fast switching times.
Can the N- and P-channel be used independently in separate circuits?
Yes - the N- and P-channel share only the drain terminals (pins 3/4 and 5/8); gates (1 and 7) and sources (2 and 6) are fully isolated. This allows independent control in distinct functional blocks, provided shared drain connections are managed per circuit topology and voltage domain compatibility.
Is AUIRF7319QTR pin-compatible with earlier AUIRF7319Q versions?
Yes - AUIRF7319QTR is the tape-and-reel packaging variant of AUIRF7319Q, sharing identical electrical specifications, pinout, thermal behavior, and mechanical dimensions. The "TR" suffix denotes packaging only; no functional or parametric differences exist between the two orderables.
AUIRF7319QTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A, 4.9A
- Rds On (Max) @ Id, Vgs:
- 29mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AUIRF7319QTR FAQ
1.How can I place an order for AUIRF7319QTR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7319QTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7319QTR reliable?
The price and inventory of AUIRF7319QTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7319QTR is usually 5 days.
3.What payment methods are accepted for AUIRF7319QTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7319QTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7319QTR?
AUIRF7319QTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7319QTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7319QTR?
For technical support, including AUIRF7319QTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7319QTR requirements.
6.How does Aetrix verify that AUIRF7319QTR is sourced from the original manufacturer or authorized distributors?
All AUIRF7319QTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7319QTR meets industry standards.
7.What is the process for return or replacement of AUIRF7319QTR?
All AUIRF7319QTR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7319QTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7319QTR part is unused and in its original packaging.
Return procedure for AUIRF7319QTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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