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Infineon Technologies AUIRF7341Q
- Part No.:
- AUIRF7341Q
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AUIRF7341Q.pdf
- Description:
- MOSFET 2N-CH 55V 5.1A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:5,060
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Product details
Overview
AUIRF7341Q from Infineon is a dual N-channel automotive-grade power MOSFET in SO-8 package, rated for 55 V VDS, 5.1 A continuous drain current at 25°C, and 0.043 Ω typical RDS(on) at VGS = 10 V. It operates up to 175°C junction temperature and features logic-level gate drive, fast switching, and enhanced repetitive avalanche capability-used in automotive body control modules for high-side/low-side load switching.
For engineers reviewing the AUIRF7341Q datasheet, AUIRF7341Q pinout, AUIRF7341Q application, or AUIRF7341Q equivalent, key selection criteria include its dual-die SO-8 thermal performance, 4.5 V logic-compatible gate threshold, 29 nC total gate charge, and automotive qualification per AEC-Q101 standards.
Technical Context
This dual N-channel MOSFET integrates two identical HEXFET die in a single surface-mount SO-8 package, enabling compact half-bridge or independent load-switch configurations. Its planar process delivers ultra-low on-resistance density and stable RDS(on) over temperature (0.056 Ω max at 4.5 V, 4.42 A).
Thermal design is supported by 62.5 °C/W junction-to-ambient resistance under FR-4 board mount conditions and a 175°C maximum operating junction temperature. Dynamic parameters-including 9.2 ns turn-on delay, 7.7 ns rise time, and 780 pF input capacitance-are specified at VDS = 44 V and TJ = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage for 12 V automotive systems with load dump margin |
| RDS(on) typ. | 0.043 Ω @ VGS = 10 V, ID = 5.1 A - Enables <100 mW conduction loss at 5 A |
| ID cont. | 5.1 A @ TA = 25°C - Sustains full-load current in compact PCB layouts without forced cooling |
| Qg | 29 nC typ. - Reduces gate driver power demand and enables efficient 100 kHz+ PWM operation |
| TJ max | +175°C - Supports under-hood placement in engine control units and lighting modules |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIOs |
| EAS | 140 mJ - Withstands unclamped inductive energy during relay or solenoid de-energization |
Pinout & Package
Package: SO-8 (Surface Mount, Dual Die), 5.0 mm × 6.2 mm footprint, 1.75 mm height, lead-free and RoHS compliant. Thermal pad not present; thermal path relies on copper pour under exposed drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (D1) | Drain 1 | Common high-current output node for first MOSFET; internally bonded to leadframe for low-inductance power routing |
| 5 (G1) | Gate 1 | Control terminal for first MOSFET; requires <3 V threshold margin for robust logic-level drive |
| 6 (S1) | Source 1 | Return path for first MOSFET; electrically isolated from S2 to support floating half-bridge topologies |
| 7 (G2) | Gate 2 | Independent control input for second MOSFET; enables synchronous or complementary switching |
| 8, 7, 6, 5 (D2) | Drain 2 | Second high-current drain node; pin 8 is primary drain connection; pins 5–7 shared with G2/S1-requires layout separation |
| - (S2) | Source 2 | Exposed source pad on underside (not pin-labeled); must be soldered to PCB ground plane for thermal and electrical integrity |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel configuration | Two independent 55 V/5.1 A MOSFETs in one SO-8 package-reduces board area by ~40% vs. discrete singles |
| Logic-level gate drive | VGS(th) max 3.0 V ensures full enhancement with 3.3 V MCU outputs without level-shifting circuitry |
| 175°C junction rating | Validated operation at extreme under-hood temperatures-eliminates derating in ambient >125°C environments |
| Enhanced avalanche ruggedness | 140 mJ single-pulse EAS and 5.1 A IAR support reliable operation in inductive load switching |
| Automotive qualification | AEC-Q101 qualified with 100% production lot testing-meets zero-defect requirements for safety-critical ECUs |
Applications
| Body Control Module (BCM) | LED Headlamp Driver |
|---|---|
Use Scenario: Driving multiple 12 V resistive and inductive loads (windows, mirrors, locks) from a centralized ECU. IC Role / Device Role / Timing Role: Dual high-side switch controlling load current direction and sequencing via PWM or on/off signals. Use Value: 0.043 Ω RDS(on) minimizes heat generation in confined BCM enclosures; SO-8 footprint saves >30% PCB area versus dual-SOT-23. | Use Scenario: Constant-current dimming of automotive LED arrays using buck or linear regulation topologies. IC Role / Device Role / Timing Role: Low-side current sink switch synchronizing with controller PWM at 1–20 kHz. Use Value: 29 nC Qg enables fast switching with minimal gate driver loss; 175°C rating sustains operation near hot LED heatsinks. |
| Engine Start-Stop System | Electric Power Steering (EPS) |
Use Scenario: Managing auxiliary power distribution during engine cranking and restart events with transient voltage spikes. IC Role / Device Role / Timing Role: Protected load switch isolating non-critical subsystems during 24 V cold-crank transients. Use Value: 55 V VDS withstands ISO 7637-2 Pulse 5a (up to 60 V); 140 mJ EAS absorbs inductive kickback from solenoids. | Use Scenario: Driving motor phase windings in brushless DC motor controllers for torque assist. IC Role / Device Role / Timing Role: Half-bridge low-side switch in three-phase inverter stage, commutated at >10 kHz. Use Value: Dual-die SO-8 allows matched timing and thermal coupling between parallel switches; 7.7 ns rise time supports clean PWM edges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N4LF5 | 40 V VDS, 220 A pulsed, TO-263 package, higher RDS(on) (0.95 mΩ), no logic-level gate | Designed for high-current traction inverters-not suitable for space-constrained BCMs | Select only when >100 A peak current and TO-263 mounting are acceptable |
| ON Semiconductor NTMFS4C09NT1G | 30 V VDS, 100 A pulsed, SO-8, 0.95 mΩ RDS(on), logic-level gate, but not AEC-Q101 qualified | Targeted at industrial DC-DC converters-lacks automotive reliability validation and temperature margin | Acceptable for non-safety-critical 12 V systems where AEC-Q101 is not mandated |
Compared with STL220N4LF5 and NTMFS4C09NT1G, AUIRF7341Q uniquely balances 55 V rating, logic-level drive, AEC-Q101 compliance, and dual-die SO-8 integration-making it optimal for space- and reliability-constrained automotive body electronics.
Availability
AUIRF7341Q is available at Aetrix Electronics and suitable for automotive body control modules, LED headlamp drivers, engine start-stop systems, and electric power steering controllers requiring stable component supply across extended vehicle lifecycles.
Supply support for AUIRF7341Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to IATF 16949.
AUIRF7341Q belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, thermally demanding 12 V and 24 V vehicle subsystems including lighting, chassis, and power distribution.
FAQ
What is the maximum allowable gate-source voltage for AUIRF7341Q?
The absolute maximum VGS is ±20 V, as specified in the Absolute Maximum Ratings table. Operation beyond this risks permanent gate oxide damage. For reliable logic-level drive, keep VGS within 0–12 V in normal use, with transient spikes clamped to ≤15 V using external Zener diodes if needed.
Can AUIRF7341Q be used in a half-bridge configuration?
Yes-its dual N-channel structure and isolated sources (S1 and S2) support half-bridge implementation. However, high-side drive requires a bootstrap or isolated gate driver due to lack of integrated level shift; the device itself does not include high-side gate control circuitry.
Is thermal pad soldering required for AUIRF7341Q?
No thermal pad is present in the SO-8 package. Heat dissipation relies on copper pour connected to drain terminals (pins 1–4 and 8) and source terminals (pin 6 and underside S2). A minimum 250 mm² 2-oz copper area per drain is recommended to achieve the rated 2.4 W power dissipation at 25°C ambient.
Does AUIRF7341Q support bidirectional current flow?
No-it is a unidirectional N-channel MOSFET. Current flows only from drain to source when the gate is biased above threshold. The integrated body diode allows reverse current during freewheeling, but intentional bidirectional conduction requires external circuitry such as back-to-back MOSFETs or a dedicated H-bridge IC.
AUIRF7341Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 5.1A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 780pF @ 25V
- Power - Max:
- 2.4W
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AUIRF7341Q FAQ
1.How can I place an order for AUIRF7341Q through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7341Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7341Q reliable?
The price and inventory of AUIRF7341Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7341Q is usually 5 days.
3.What payment methods are accepted for AUIRF7341Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7341Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7341Q?
AUIRF7341Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7341Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7341Q?
For technical support, including AUIRF7341Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7341Q requirements.
6.How does Aetrix verify that AUIRF7341Q is sourced from the original manufacturer or authorized distributors?
All AUIRF7341Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7341Q meets industry standards.
7.What is the process for return or replacement of AUIRF7341Q?
All AUIRF7341Q units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7341Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7341Q part is unused and in its original packaging.
Return procedure for AUIRF7341Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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