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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies AUIRF7341QTR

Name: AUIRF7341QTR
Brand: Infineon Technologies
SKU: AUIRF7341QTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF7341QTR

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AUIRF7341QTR.pdf

Description:: MOSFET 2N-CH 55V 5.1A 8SOIC

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Product details

Overview

AUIRF7341QTR from Infineon is a dual N-channel automotive-grade power MOSFET in SO-8 package, rated for 55 V V_DS, 5.1 A continuous drain current at 25°C, and ultra-low R_DS(on) of 43 mΩ at V_GS = 10 V. It operates up to 175°C junction temperature and delivers fast switching (t_d(on) = 9.2 ns, t_f = 12.5 ns) with robust repetitive avalanche capability (E_AR up to 140 mJ), making it ideal for high-reliability DC-DC converter high-side/low-side switching in engine control units.

For engineers reviewing the AUIRF7341QTR datasheet, AUIRF7341QTR pinout, AUIRF7341QTR application, or AUIRF7341QTR equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–3.0 V), dual-die thermal coupling in SO-8, body diode recovery performance (t_rr = 51–77 ns), and automotive qualification per AEC-Q101 standards.

Technical Context

This dual N-channel MOSFET integrates two independent HEXFET die in a single SO-8 surface-mount package, enabling synchronous buck or half-bridge topologies without discrete pairing. Its planar process yields low R_DS(on) density and stable threshold voltage over temperature (ΔV_(BR)DSS/ΔT_J = 0.052 V/°C).

The device supports logic-level gate drive down to 4.5 V (R_DS(on) = 56 mΩ), features enhanced repetitive avalanche rating (I_AR = 5.1 A), and maintains safe operating area integrity up to 175°C with Z_thJA = 62.5 °C/W under FR-4 board conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Supports 48 V automotive bus and 36 V nominal systems with margin against transients.
R_DS(on) @ 10 V	43 mΩ typ. - Enables <100 mW conduction loss at 5 A, critical for thermally constrained ECUs.
I_D cont. @ 25°C	5.1 A - Sustains peak load currents in motor drivers and solenoid controls without derating.
t_f / t_r	12.5 ns / 7.7 ns - Reduces switching losses in >200 kHz DC-DC converters and PWM inverters.
T_J max	+175°C - Meets under-hood thermal requirements for transmission control modules and ADAS power stages.
Q_g	29 nC typ. - Compatible with low-current gate drivers (e.g., TC4427) while minimizing drive power.
E_AS	140 mJ - Withstands unclamped inductive turn-off events in relay/snubberless loads without failure.

Pinout & Package

Package: SO-8 (Surface-Mount, Dual-Die N-Channel), 4.9 × 6.0 mm footprint, 1.75 mm height, RoHS-compliant lead-free finish.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4 - S1, G1, D1, D1	Channel 1 Source/Gate/Drain terminals	Pin 1 = S1, Pin 2 = G1, Pins 3 & 4 = D1 (common drain); enables high-side switch configuration with Kelvin source sensing.
5, 6, 7, 8 - D2, D2, G2, S2	Channel 2 Drain/Gate/Source terminals	Pins 5 & 6 = D2 (common drain), Pin 7 = G2, Pin 8 = S2; allows independent gate control for synchronous rectification or phase-leg driving.

Key Features

Feature	Design Value
Dual N-channel topology	Two matched MOSFETs in one SO-8 reduce PCB area by >40% vs. discrete pairs and improve thermal tracking.
Logic-level gate drive	V_GS(th) = 1.0–3.0 V ensures full enhancement with 3.3 V or 5 V microcontroller outputs without level-shifting.
Repetitive avalanche rated	Rated for I_AR = 5.1 A and E_AR up to 140 mJ - eliminates need for external snubbers in inductive load switching.
175°C junction operation	Validated per AEC-Q101 - supports placement near heat sources (e.g., power inductors) in compact engine bay modules.
Low C_iss / C_oss	C_iss = 780 pF, C_oss = 190 pF - minimizes Miller effect and improves hard-switching efficiency in high-frequency SMPS.

Applications

Engine Control Unit (ECU) Power Stage

Automotive DC-DC Converter

Use Scenario: High-side switching of fuel injector drivers and ignition coil primary circuits in gasoline/diesel ECUs.

IC Role / Device Role / Timing Role: Dual N-channel MOSFET acts as synchronized high-side switch and freewheeling path, replacing discrete P/N pair with improved timing alignment.

Use Value: Eliminates body diode reverse recovery loss during commutation, reducing thermal stress by 22% vs. single-channel alternatives.

Use Scenario: Synchronous rectification in 12 V → 3.3 V/5 V buck converters powering ADAS sensors and infotainment SoCs.

IC Role / Device Role / Timing Role: Channel 1 serves as high-side switch; Channel 2 as low-side synchronous rectifier, sharing gate drive timing via common control logic.

Use Value: Achieves >92% efficiency at 3 A load due to matched R_DS(on) and low Q_gd (7.3 nC), cutting conduction loss by 35% vs. Schottky diode solution.

Transmission Control Module (TCM)

Electric Power Steering (EPS) Motor Driver

Use Scenario: Solenoid valve actuation in automatic transmission hydraulic control units exposed to under-hood temperatures up to 150°C ambient.

IC Role / Device Role / Timing Role: Low-side driver for proportional pressure control valves, leveraging integrated body diode for flyback energy recirculation.

Use Value: V_SD = 1.2 V at 2.6 A enables <3 W dissipation during 100% duty cycle, avoiding thermal shutdown in sealed TCM housings.

Use Scenario: Half-bridge leg in 24 V EPS motor gate driver IC auxiliary supply, handling bidirectional regenerative braking current.

IC Role / Device Role / Timing Role: Dual-channel configuration supports complementary PWM with dead-time control, using shared source nodes for current sensing.

Use Value: Matched channel parameters ensure balanced shoot-through immunity and <±5% current mismatch across temperature, improving torque linearity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V V_DS, 220 A single-die, TO-263 package - higher current but no dual topology or SO-8 footprint.	Requires two separate devices and larger PCB area; lacks integrated thermal coupling between channels.	Choose only when >10 A per channel is required and board space is unconstrained.
ON Semiconductor NTMFS4C09NT1G	Single N-channel, 30 V, 9.4 mΩ, SO-8 - lower voltage rating and no dual functionality.	Cannot replace dual-channel function without redesign; unsuitable for 48 V systems or synchronous rectification.	Select only for low-voltage (<36 V), single-switch applications where dual topology is unnecessary.

Compared with STL220N6F7 and NTMFS4C09NT1G, AUIRF7341QTR uniquely delivers dual-channel integration, 55 V rating, and AEC-Q101 qualification in SO-8 - enabling compact, thermally balanced, and automotive-compliant power stage designs without layout compromise.

Availability

AUIRF7341QTR is available at Aetrix Electronics and suitable for engine control units, transmission control modules, electric power steering systems, and ADAS domain controllers requiring stable component supply across extended temperature and long product lifecycles.

Supply support for AUIRF7341QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and AEC-Q101 validation infrastructure.

AUIRF7341QTR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature power switching in engine, chassis, and safety-critical vehicle subsystems.

FAQ

What is the maximum gate-to-source voltage rating for AUIRF7341QTR?

The absolute maximum V_GS is ±20 V, with recommended operating range of –12 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent transient overshoot during fast switching or hot-plug events.

Can AUIRF7341QTR be used in a synchronous buck converter without external diodes?

Yes - its integrated body diodes support synchronous rectification when Channel 2 is configured as the low-side switch. The diode forward voltage is 1.2 V at 2.6 A and 25°C, with t_rr = 51–77 ns, enabling efficient operation up to 500 kHz with proper gate timing and dead-time control.

Is AUIRF7341QTR qualified for under-hood automotive environments?

Yes - it is AEC-Q101 qualified, with guaranteed operation from –55°C to +175°C junction temperature, 100% production-tested for HTRB, UHAST, and temperature cycling. The SO-8 package meets automotive mechanical shock and vibration requirements per JESD22-B103.

How does the dual-die thermal coupling affect SO-8 thermal performance?

The two MOSFET die share a common thermal pad and substrate within the SO-8 package, resulting in coupled junction-to-case thermal resistance. This enables balanced thermal loading but requires derating both channels simultaneously - total PD must stay below 2.4 W at 25°C ambient per datasheet limits.

AUIRF7341QTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 55V

Current - Continuous Drain (Id) @ 25°C:: 5.1A

Rds On (Max) @ Id, Vgs:: 50mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 780pF @ 25V

Power - Max:: 2.4W

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

AUIRF7341QTR FAQ

1.How can I place an order for AUIRF7341QTR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7341QTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7341QTR reliable?

The price and inventory of AUIRF7341QTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7341QTR is usually 5 days.

3.What payment methods are accepted for AUIRF7341QTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7341QTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7341QTR?

AUIRF7341QTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7341QTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7341QTR?

For technical support, including AUIRF7341QTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7341QTR requirements.

6.How does Aetrix verify that AUIRF7341QTR is sourced from the original manufacturer or authorized distributors?

All AUIRF7341QTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7341QTR meets industry standards.

7.What is the process for return or replacement of AUIRF7341QTR?

All AUIRF7341QTR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7341QTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7341QTR part is unused and in its original packaging.

Return procedure for AUIRF7341QTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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