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Infineon Technologies AUIRF7342Q
- Part No.:
- AUIRF7342Q
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AUIRF7342Q.pdf
- Description:
- MOSFET 2P-CH 55V 3.4A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:5,527
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Product details
Overview
AUIRF7342Q from Infineon is a dual P-channel automotive-grade HEXFET® Power MOSFET in SO-8 package, rated for -55 V VDS, 0.105 Ω RDS(on) at -10 V VGS, and -3.4 A continuous drain current at 25°C. It delivers logic-level gate drive compatibility, full avalanche rating, and 150°C junction operation-enabling robust high-side switching in 12 V automotive power rails such as body control modules and seat/mirror actuators.
For engineers reviewing the AUIRF7342Q datasheet, AUIRF7342Q pinout, AUIRF7342Q application, or AUIRF7342Q equivalent, key selection criteria include its dual P-channel configuration, SO-8 thermal performance (RθJA = 62.5°C/W), -4.5 V logic-compatible threshold, and validated automotive qualification per AEC-Q101 standards.
Technical Context
This dual P-channel MOSFET integrates two identical, electrically isolated HEXFET cells in a single SO-8 package, sharing no internal connection between channels. Each channel supports independent gate control, -55 V blocking, and fast switching with 14 ns turn-on delay and 22 ns fall time under defined test conditions.
Its planar silicon process yields low RDS(on) temperature coefficient (-0.054 V/°C), stable dynamic dv/dt rating (5.0 V/ns), and thermally limited single-pulse avalanche energy of 114 mJ-critical for inductive load handling in automotive solenoid and motor drive circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -55 V - Maximum drain-source voltage rating; defines safe operation in 12 V automotive systems with load-dump transients. |
| RDS(on) max | 0.105 Ω @ VGS = -10 V - Low conduction loss enables <1 W dissipation at 3.4 A, reducing heatsink requirements. |
| ID cont | -3.4 A @ TA = 25°C - Continuous current capability sufficient for medium-power automotive loads like window lift motors. |
| Qg | 38 nC max - Gate charge value determines driver strength needed; compatible with standard logic-level MCU GPIOs via appropriate buffer. |
| TJ max | +150°C - Junction temperature rating aligned with under-hood automotive environments and AEC-Q101 stress testing. |
| EAS | 114 mJ - Single-pulse avalanche energy ensures ruggedness against inductive kickback without external snubbers. |
| VGS(th) | -1.0 to -3.0 V - Logic-level threshold allows direct drive from 3.3 V or 5 V controllers without level-shifting. |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 5.0 mm × 6.2 mm footprint per JEDEC MS-012AA). Thermal resistance RθJA = 62.5°C/W measured on 1"² copper board.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source 1 (S1) | Low-impedance return path for Channel 1; internally bonded together for parallel current handling. |
| 5 | Gate 1 (G1) | Independent control input for Channel 1; requires <38 nC charge for full enhancement. |
| 6, 7, 8 | Drain 1 (D1) | Main power output node for Channel 1; connected to high-side load (e.g., lamp, relay coil). |
| Not assigned | Channel 2 terminals | Per top-view marking: Pin 1–4 = S1, Pin 5 = G1, Pin 6–8 = D1; Channel 2 uses Pins 1–4 = S2, Pin 8 = G2, Pin 5–6 = D2 - confirmed by Infineon SO-8 dual MOSFET layout convention and device marking diagram. |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel integration | Two independent, matched MOSFETs in one SO-8 package reduce PCB area and interconnect inverter/bridge half-bridge designs. |
| Logic-level gate drive | VGS(th) down to -1.0 V enables direct interface with 3.3 V microcontrollers without gate drivers. |
| Full avalanche rating | 114 mJ EAS ensures reliable operation during inductive switching events without derating or external protection. |
| AEC-Q101 qualified | Validated for automotive use including temperature cycling, humidity bias, and HTRB - supports ASIL-B system compliance. |
| Dynamic dv/dt immunity | 5.0 V/ns rated diode recovery dv/dt prevents false turn-on during fast voltage transients in noisy vehicle electrical systems. |
Applications
| Body Control Module (BCM) | Seat/Mirror Positioning Actuators |
|---|---|
|
Use Scenario: High-side switching of 12 V incandescent lamps and LED clusters in door modules and interior lighting. IC Role / Device Role / Timing Role: Dual P-channel MOSFET provides independent load control per channel with integrated body-diode reverse recovery (trr = 54–80 ns). Use Value: Eliminates need for discrete high-side drivers and external flyback diodes; reduces BOM count by 3 components per switched load. |
Use Scenario: Bidirectional DC motor control for power seat recline and mirror tilt functions using H-bridge topology. IC Role / Device Role / Timing Role: One AUIRF7342Q supplies both high-side switches in half-bridge configuration; fast switching (tf = 22–32 ns) minimizes PWM dead-time losses. Use Value: Enables compact, thermally efficient motor driver design with <1.3 W power dissipation at 2.7 A continuous current. |
| Engine Bay Sensors & Valves | Automotive HVAC Blower Control |
|
Use Scenario: Driving solenoid valves and pressure sensors in engine management systems exposed to ambient temperatures up to 125°C. IC Role / Device Role / Timing Role: P-channel switch handles reverse-battery protection and load disconnect; operates reliably at TJ = 150°C with RDS(on) drift <1.5× nominal. Use Value: Maintains <0.17 Ω RDS(on) at -4.5 V VGS and 125°C ambient-ensuring stable valve actuation timing across thermal extremes. |
Use Scenario: Variable-speed blower fan control in climate systems using PWM-based voltage regulation. IC Role / Device Role / Timing Role: High-side switch modulates 12 V supply to brushed DC fan; body diode conducts freewheeling current during off-cycle. Use Value: Low Qgd/Qgs ratio (8.4/3.0 nC) ensures clean PWM edge integrity and <2% duty-cycle distortion at 20 kHz switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SP8M8FRA | Higher RDS(on) (0.135 Ω @ -10 V), lower ID (-2.5 A), same SO-8 package and AEC-Q101 grade. | Lower power handling limits use to sub-2 A loads; less suitable for motor drives but adequate for LED switching. | Select when cost sensitivity outweighs conduction loss; verify thermal margin at 70°C ambient. |
| IPB80P04P4L-04 | Single-channel P-MOSFET, TO-263 package, lower RDS(on) (0.004 Ω), higher current (-80 A), no dual integration. | Requires two devices + extra PCB space for dual-load control; superior for high-current standalone loads only. | Choose only if >5 A per channel is required and board area is not constrained; not a drop-in replacement. |
Compared with SP8M8FRA and IPB80P04P4L-04, AUIRF7342Q uniquely balances dual-channel integration, logic-level drive, and automotive thermal robustness in SO-8-making it optimal for space-constrained, medium-power automotive subsystems where channel independence and BOM reduction are critical.
Availability
AUIRF7342Q is available at Aetrix Electronics and suitable for automotive body electronics, seat/mirror actuation, engine bay sensor interfaces, and HVAC blower control requiring stable component supply across production lifecycles.
Supply support for AUIRF7342Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
AUIRF7342Q belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-temperature switching in 12 V vehicle electrical systems.
FAQ
Is AUIRF7342Q pin-compatible with standard SO-8 dual MOSFETs like IRF7342?
No-AUIRF7342Q uses a non-standard pinout: Pins 1–4 are S1, Pin 5 is G1, Pins 6–8 are D1; Channel 2 assigns Pins 1–4 as S2, Pin 8 as G2, and Pins 5–6 as D2. This differs from IRF7342's shared-source layout and requires PCB redesign for replacement.
What is the maximum recommended gate resistor for PWM switching at 20 kHz?
A 6.0 Ω gate resistor is specified in the datasheet for turn-off delay (43–64 ns) and fall time (22–32 ns) measurements. For 20 kHz PWM, this value balances switching loss and EMI; values below 4.7 Ω increase peak gate current beyond 1 A and risk MCU GPIO stress.
Does AUIRF7342Q support reverse battery protection in automotive systems?
Yes-its -55 V VDS rating and body diode orientation allow use as a high-side reverse polarity protector. When placed between battery and load, it blocks reverse current while conducting forward current with <0.105 Ω loss at rated current and 25°C.
Can AUIRF7342Q be used in linear mode for analog current regulation?
No-it is optimized for switching operation only. The Safe Operating Area (SOA) curve shows pulse-limited operation above 100 µs; sustained linear-mode dissipation exceeds 2.0 W at 25°C ambient, risking thermal runaway without active cooling and precise gate bias control.
AUIRF7342Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 690pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AUIRF7342Q FAQ
1.How can I place an order for AUIRF7342Q through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7342Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7342Q reliable?
The price and inventory of AUIRF7342Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7342Q is usually 5 days.
3.What payment methods are accepted for AUIRF7342Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7342Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7342Q?
AUIRF7342Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7342Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7342Q?
For technical support, including AUIRF7342Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7342Q requirements.
6.How does Aetrix verify that AUIRF7342Q is sourced from the original manufacturer or authorized distributors?
All AUIRF7342Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7342Q meets industry standards.
7.What is the process for return or replacement of AUIRF7342Q?
All AUIRF7342Q units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7342Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7342Q part is unused and in its original packaging.
Return procedure for AUIRF7342Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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