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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies AUIRF7343Q

Name: AUIRF7343Q
Brand: Infineon Technologies
SKU: AUIRF7343Q
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF7343Q

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AUIRF7343Q.pdf

Description:: MOSFET N/P-CH 55V 4.7A 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF7343Q from Infineon is an automotive-qualified dual-channel power MOSFET in SO-8 package, integrating one N-channel (55 V, 4.7 A, R_DS(on) = 43 mΩ @ 10 V) and one P-channel (−55 V, −3.4 A, R_DS(on) = 95 mΩ @ −10 V) HEXFET® device. It operates up to 150°C junction temperature and delivers fast switching (t_d(off) = 32–48 ns), high avalanche energy (72/114 mJ), and logic-level gate drive compatibility - used in bidirectional DC-DC converters and H-bridge motor drivers for automotive body electronics.

For engineers reviewing the AUIRF7343Q datasheet, AUIRF7343Q pinout, AUIRF7343Q application, or AUIRF7343Q equivalent, key selection criteria include dual-channel complementary conduction capability, SO-8 thermal performance (R_θJA = 62.5°C/W), automotive-grade reliability (AEC-Q101 qualified), and body diode recovery characteristics (t_rr = 60–90 ns).

Technical Context

This dual MOSFET implements complementary N- and P-channel silicon on a single SO-8 die substrate, enabling half-bridge and bidirectional switch topologies without external pairing. Its planar process achieves low R_DS(on) density while maintaining robust 150°C operation and 5.0 V/ns dv/dt immunity.

The device supports logic-level gate drive (V_GS(th) = ±1.0 V) and features tightly matched dynamic parameters: Q_g = 24–36 nC (N-ch) / 26–38 nC (P-ch), C_iss = 740 / 690 pF, and t_r/t_f = 3.2–4.8 / 10–15 ns - critical for synchronous rectification and PWM-controlled load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	N-ch: 55 V; P-ch: −55 V - enables 48 V automotive bus and 24 V load switching with margin.
R_DS(on)	N-ch: 43 mΩ @ 10 V; P-ch: 95 mΩ @ −10 V - determines conduction loss in high-current paths like window lift or seat control.
I_D (cont)	N-ch: 4.7 A @ 25°C; P-ch: −3.4 A @ 25°C - defines maximum continuous current per channel under board-mounted conditions.
E_AS	N-ch: 72 mJ; P-ch: 114 mJ - quantifies single-pulse avalanche ruggedness during inductive turn-off transients.
t_r/t_f	N-ch: 3.2–4.8 ns; P-ch: 10–15 ns - sets minimum PWM frequency and EMI profile in switching regulators.
T_J max	+150°C - allows operation in engine bay or under-hood modules without derating at elevated ambient temperatures.
Q_g	N-ch: 24–36 nC; P-ch: 26–38 nC - determines gate driver strength requirement and switching loss trade-off.

Pinout & Package

Package: Surface-mount SO-8 (dual-die, thermally enhanced), JEDEC MS-012AC compliant. Pin 1–4 assigned to N-channel (G1/D1/D1/S1); pins 5–8 to P-channel (S2/G2/D2/D2), with shared drain terminals internally connected as D1/D2 pairs per side.

Pin/Terminal	Circuit Role	Design Meaning
1 (G1)	N-channel gate	Logic-level input controlling N-MOSFET; requires <10 V for full enhancement.
2 (D1)	N-channel drain	High-side switching node; electrically tied to pin 3 for parallel current handling.
3 (D1)	N-channel drain (redundant)	Second drain terminal for lower inductance and improved thermal spreading in PCB layout.
4 (S1)	N-channel source	Reference node for N-ch; connects to ground or low-side return path in half-bridge.
5 (S2)	P-channel source	High-side reference; ties to supply rail in high-side switch configuration.
6 (G2)	P-channel gate	Inverted logic input; driven low to turn on P-MOSFET in high-side applications.
7 (D2)	P-channel drain	Load connection node; electrically tied to pin 8 for current sharing and thermal relief.
8 (D2)	P-channel drain (redundant)	Secondary drain pad enhancing thermal dissipation and reducing bond wire inductance.

Key Features

Feature	Design Value
Dual N+P channel integration	Eliminates discrete pairing; reduces PCB area by >40% vs. two separate SO-8 MOSFETs in H-bridge layouts.
Automotive qualification (AEC-Q101)	Validated for 150°C operation, humidity resistance, and mechanical shock - suitable for body control modules and lighting drivers.
Enhanced avalanche rating	Single-pulse E_AS up to 114 mJ (P-ch) ensures reliable operation during inductive load turn-off without snubbers.
Logic-level gate drive	V_GS(th) = ±1.0 V enables direct interface with 3.3 V/5 V microcontrollers - no level-shifting required.
SO-8 thermal optimization	R_θJA = 62.5°C/W (PCB mounted) supports 2.0 W dissipation at 25°C ambient - sufficient for 5 A pulsed loads.

Applications

Automotive Window Lift Control

Seat Position Adjustment Motor Driver

Use Scenario: Bidirectional 12 V DC motor control for power windows with soft-stop and anti-pinch detection.

IC Role / Device Role / Timing Role: Dual-channel half-bridge switch providing forward/reverse polarity reversal via complementary N/P gate timing.

Use Value: Integrated N+P pair eliminates external gate timing coordination; fast t_r/t_f enables precise PWM-based speed regulation and current sensing.

Use Scenario: Compact linear actuator control in automotive seats requiring reversible motion and stall detection.

IC Role / Device Role / Timing Role: High-side P-ch + low-side N-ch switch implementing direction control and regenerative braking via body diode conduction.

Use Value: Matched R_DS(on) and Q_g between channels ensure symmetrical rise/fall times and balanced power dissipation during bidirectional operation.

LED Headlamp Dimming Circuit

Start-Stop System Load Switch

Use Scenario: PWM dimming of high-brightness LED arrays in adaptive front lighting systems (AFS).

IC Role / Device Role / Timing Role: Synchronous buck converter high-side switch using P-ch MOSFET with fast turn-on for efficiency above 95%.

Use Value: Low R_DS(on) (95 mΩ) and high E_AS (114 mJ) prevent failure during LED string short-circuit events and thermal cycling.

Use Scenario: Controlled engagement/disengagement of auxiliary loads (e.g., HVAC, infotainment) during engine cranking in 12 V start-stop systems.

IC Role / Device Role / Timing Role: Load switch managing voltage droop mitigation via controlled slew rate and overcurrent protection.

Use Value: 150°C rated junction and −55°C to +150°C T_STG support under-hood mounting; body diode t_rr = 54–80 ns minimizes reverse recovery losses during load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD70N04S4-04	Single N-channel 40 V, 70 A, R_DS(on) = 4.0 mΩ - higher current, no P-ch complement.	Requires external P-ch for bidirectional control; better suited for high-power unidirectional loads only.	Select when peak current exceeds 5 A and complementary switching is not needed.
SP8M8	Dual N-channel 60 V, 4.5 A each, R_DS(on) = 45/45 mΩ - matched N+N, no P-ch capability.	Limited to high-side N-ch + external level shifter; unsuitable for true high-side P-ch switch topologies.	Prefer for N+N half-bridges where gate drive complexity is acceptable and P-ch functionality is unnecessary.

Compared with IPD70N04S4-04 and SP8M8, AUIRF7343Q uniquely provides integrated complementary N+P conduction in one SO-8 package - eliminating external gate timing, level shifting, and layout asymmetry while supporting true bidirectional motor control and high-side switching without auxiliary components.

Availability

AUIRF7343Q is available at Aetrix Electronics and suitable for automotive body electronics, motor control subsystems, and LED lighting systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for AUIRF7343Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

AUIRF7343Q belongs to the HEXFET® Automotive Power MOSFET product line, designed specifically for AEC-Q101-compliant 12 V/24 V/48 V vehicle subsystems demanding high reliability, thermal resilience, and space-constrained packaging.

FAQ

Is AUIRF7343Q pin-compatible with standard SO-8 dual MOSFETs?

No - AUIRF7343Q uses a proprietary pinout: pins 1–4 serve the N-channel (G1/D1/D1/S1), and pins 5–8 serve the P-channel (S2/G2/D2/D2), with internal drain pairing. Standard dual-N SO-8 footprints (e.g., SI4946DY) assign G/D/S identically for both channels and are not mechanically or electrically compatible.

What is the maximum safe operating voltage for AUIRF7343Q in automotive 12 V systems?

The device supports V_DS up to 55 V (N-ch) and −55 V (P-ch), making it suitable for nominal 12 V automotive systems with load-dump transients up to ISO 7637-2 Pulse 5a (up to +110 V for 400 ms). Derating is required above 85°C ambient due to R_DS(on) increase and reduced PD.

Does AUIRF7343Q require external gate resistors for stability?

Yes - gate resistors (typically 5–22 Ω) are recommended to dampen ringing caused by gate-drain capacitance (Crss = 71/86 pF) and PCB inductance. Values must be selected based on desired t_r/t_f and driver capability; 6.0 Ω was used in the datasheet's switching time test conditions.

Can AUIRF7343Q replace discrete N+P MOSFET pairs in existing designs?

Yes - but layout revision is required due to its asymmetric pinout and internal drain pairing. Thermal vias under pins 2/3 and 7/8 must be implemented to achieve rated R_θJA; gate drive sequencing must respect independent N/P thresholds (±1.0 V) and avoid shoot-through during transitions.

AUIRF7343Q Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: N and P-Channel

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 55V

Current - Continuous Drain (Id) @ 25°C:: 4.7A, 3.4A

Rds On (Max) @ Id, Vgs:: 50mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 36nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 740pF @ 25V

Power - Max:: 2W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

AUIRF7343Q FAQ

1.How can I place an order for AUIRF7343Q through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF7343Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF7343Q reliable?

The price and inventory of AUIRF7343Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7343Q is usually 5 days.

3.What payment methods are accepted for AUIRF7343Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7343Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF7343Q?

AUIRF7343Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF7343Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF7343Q?

For technical support, including AUIRF7343Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7343Q requirements.

6.How does Aetrix verify that AUIRF7343Q is sourced from the original manufacturer or authorized distributors?

All AUIRF7343Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7343Q meets industry standards.

7.What is the process for return or replacement of AUIRF7343Q?

All AUIRF7343Q units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7343Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF7343Q part is unused and in its original packaging.

Return procedure for AUIRF7343Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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