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Infineon Technologies AUIRF7343QTR
- Part No.:
- AUIRF7343QTR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AUIRF7343QTR.pdf
- Description:
- MOSFET N/P-CH 55V 4.7A 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:3,748
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Product details
Overview
AUIRF7343QTR from Infineon is an automotive-qualified dual-channel power MOSFET in SO-8 package, integrating one N-channel (55 V, 4.7 A, RDS(on) = 43 mΩ @ 10 V) and one P-channel (−55 V, −3.4 A, RDS(on) = 95 mΩ @ −10 V) device on a single die. It delivers logic-level gate drive, 150 °C junction operation, and enhanced repetitive avalanche rating for high-reliability power switching in engine control units and body electronics.
For engineers reviewing the AUIRF7343QTR datasheet, AUIRF7343QTR pinout, AUIRF7343QTR application, or AUIRF7343QTR equivalent, this dual-channel automotive MOSFET supports compact half-bridge and H-bridge designs with verified thermal performance (RθJA = 62.5 °C/W), fast switching (td(off) ≤ 48 ns N-ch, ≤ 64 ns P-ch), and robust body diode recovery (trr ≤ 90 ns).
Technical Context
This dual SO-8 MOSFET implements independent N- and P-channel enhancement-mode silicon structures with planar processing, enabling complementary switching without external level-shifting. Its gate threshold voltages are tightly specified (VGS(th) = 1.0 V min N-ch, −1.0 V max P-ch), supporting direct microcontroller interface at 3.3 V/5 V logic levels.
The device features thermally coupled but electrically isolated channels, with shared thermal resistance to ambient (62.5 °C/W) and distinct avalanche energy ratings (EAS = 72 mJ N-ch, 114 mJ P-ch). Diode forward voltage is characterized at VSD = 0.70 V (N-ch) and −0.80 V (P-ch) under 2.0 A source current at 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | 55 V (N-ch), −55 V (P-ch): Supports 48 V automotive systems with 20 % margin over nominal bus voltage |
| RDS(on) @ VGS = 10 V | 43 mΩ (N-ch), 95 mΩ (P-ch): Enables <1.0 W conduction loss at 4.7 A/3.4 A continuous current |
| Continuous Drain Current | 4.7 A (N-ch), −3.4 A (P-ch) at TA = 25 °C: Sufficient for motor driver half-bridge legs and load switches |
| Junction Temperature Range | −55 °C to +150 °C: Qualified per AEC-Q101 for under-hood automotive environments |
| Gate Charge (Qg) | 24 nC (N-ch), 26 nC (P-ch) at VGS = 10 V: Enables efficient 100 kHz–500 kHz PWM switching with low gate driver power |
| Diode Reverse Recovery Time | 60–90 ns (N-ch), 54–80 ns (P-ch): Reduces switching losses and EMI in synchronous rectification |
| Thermal Resistance RθJA | 62.5 °C/W (SO-8, FR-4 board): Allows 2.0 W dissipation at 25 °C ambient before reaching 150 °C junction limit |
Pinout & Package
Package: SO-8 surface-mount, dual-die configuration with exposed drain pads for improved thermal conduction. Dimensions per JEDEC MS-012.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | N-channel gate | Logic-level input controlling N-MOSFET; compatible with 3.3 V/5 V MCU outputs |
| 2 (S1) | N-channel source | Common source node for N-ch; connects to ground or low-side switch reference |
| 3 (D1) | N-channel drain | High-current output terminal; internally bonded to exposed pad for thermal path |
| 4 (D1) | N-channel drain (shared pad) | Electrically tied to Pin 3; primary thermal interface to PCB copper |
| 5 (D2) | P-channel drain | High-current output terminal; shares thermal pad with Pin 4 but electrically isolated |
| 6 (S2) | P-channel source | Common source node for P-ch; connects to supply rail in high-side switch configurations |
| 7 (G2) | P-channel gate | Inverted logic input; driven low to turn on P-MOSFET in high-side applications |
| 8 (D2) | P-channel drain (shared pad) | Electrically tied to Pin 5; second thermal connection point to PCB |
Key Features
| Feature | Design Value |
|---|---|
| Dual N- and P-channel integration | Enables space-efficient half-bridge or complementary load switching without discrete pairing |
| Automotive qualification (AEC-Q101) | Validated for 15-year service life in engine control, lighting, and HVAC modules |
| Logic-level gate drive (VGS(th) ≤ ±1.0 V) | Eliminates need for gate driver ICs in 3.3 V/5 V microcontroller interfaces |
| Enhanced repetitive avalanche rating (EAR = 0.20 mJ) | Withstands transient overvoltage events in inductive load switching without derating |
| Lead-free, RoHS-compliant packaging | Meets automotive ELV directive and global environmental compliance requirements |
Applications
| Engine Control Unit (ECU) | Automotive LED Headlamp Driver |
|---|---|
Use Scenario: Driving solenoid valves and fuel injectors in 12 V/48 V hybrid powertrains. IC Role / Device Role / Timing Role: Dual-channel power switch implementing low-side (N-ch) and high-side (P-ch) control in sequential injection timing. Use Value: 43 mΩ/95 mΩ on-resistance minimizes I²R heating during 10 ms–20 ms pulse widths; 150 °C rating ensures reliability near hot engine blocks. |
Use Scenario: PWM dimming and fault-isolated switching of multi-string LED arrays in adaptive driving beams. IC Role / Device Role / Timing Role: High-side P-ch switch enables common-cathode topology; N-ch handles return path and short-circuit protection. Use Value: Fast trr ≤ 90 ns and low Qg reduce switching losses at 20 kHz dimming frequency; AEC-Q101 ensures zero-failure field operation. |
| Body Control Module (BCM) | Start-Stop System Load Switch |
Use Scenario: Controlling window lift motors, seat actuators, and mirror adjusters via H-bridge configuration. IC Role / Device Role / Timing Role: Complementary pair forms bidirectional DC motor driver with integrated body diodes for freewheeling. Use Value: Matched RDS(on) temperature coefficients ensure balanced current sharing; SO-8 footprint saves >40 % board area vs. discrete dual-SOIC solution. |
Use Scenario: Managing battery-to-load isolation during engine cranking and regenerative braking events. IC Role / Device Role / Timing Role: P-ch high-side switch provides reverse-polarity and overvoltage protection; N-ch monitors load current via sense resistor. Use Value: 114 mJ single-pulse avalanche energy withstands 12 V battery dump transients; −55 °C to +150 °C range covers cold-cranking to under-hood heat soak. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel automotive power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB77N06S4-05 | N-channel only, 60 V, 77 A, TO-263 package; no integrated P-ch | Requires external P-MOSFET for high-side switching; higher current capability but larger footprint | Select when >10 A continuous current is required and board space allows discrete layout |
| SP8M8F | Single N-ch 60 V, 8.5 A, SO-8; lacks P-ch channel and automotive qualification | Not rated for automotive temperature or reliability; suitable only for industrial prototypes | Use only for non-automotive evaluation where AEC-Q101 is not mandated |
Compared with IPB77N06S4-05 and SP8M8F, AUIRF7343QTR uniquely delivers matched N+P channel integration, AEC-Q101 qualification, and SO-8 thermal efficiency-making it the only drop-in solution for space-constrained, safety-critical automotive half-bridges requiring both polarity switches on one footprint.
Availability
AUIRF7343QTR is available at Aetrix Electronics and suitable for engine control units, LED headlamp drivers, body control modules, and start-stop system load switches requiring stable component supply across extended vehicle lifecycles.
Supply support for AUIRF7343QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and qualification infrastructure.
AUIRF7343QTR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power switching in harsh-temperature automotive subsystems including powertrain, chassis, and body electronics.
FAQ
Is AUIRF7343QTR pin-compatible with standard SO-8 MOSFETs?
No-AUIRF7343QTR uses a proprietary dual-die SO-8 pinout: Pins 1–3–4 form the N-channel (G1–S1–D1), while Pins 5–6–7 form the P-channel (D2–S2–G2), with shared drain pads (Pins 3/4 and 5/8). Standard SO-8 single-channel MOSFETs have different terminal assignments and cannot be substituted without PCB redesign.
What is the maximum safe operating frequency for PWM switching with AUIRF7343QTR?
Based on measured gate charge (24–26 nC) and switching times (td(on) ≈ 8–14 ns, tf ≈ 13–22 ns), AUIRF7343QTR supports reliable PWM operation up to 500 kHz in well-designed gate-drive circuits with ≤ 10 Ω series resistance and proper layout. Above 300 kHz, thermal management becomes critical due to increased switching loss contribution.
Does AUIRF7343QTR require external gate resistors for automotive EMI compliance?
Yes-datasheet-recommended gate resistors (6.0 Ω for N-ch, 6.0 Ω for P-ch) are required to meet CISPR 25 Class 5 radiated emissions limits. Omitting them increases dv/dt (up to 5.0 V/ns) and causes excessive ringing, risking electromagnetic interference with CAN/LIN buses and infotainment systems.
Can the body diodes be used for synchronous rectification in a buck converter?
Yes-the N-channel and P-channel body diodes are characterized with VSD = 0.70 V and −0.80 V at 2.0 A, and trr = 60–90 ns. They support synchronous rectification in low-voltage (<12 V) buck converters, but external Schottky diodes are preferred above 200 kHz due to lower forward drop and faster recovery.
AUIRF7343QTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A, 3.4A
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 36nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AUIRF7343QTR FAQ
1.How can I place an order for AUIRF7343QTR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7343QTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7343QTR reliable?
The price and inventory of AUIRF7343QTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7343QTR is usually 5 days.
3.What payment methods are accepted for AUIRF7343QTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7343QTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7343QTR?
AUIRF7343QTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7343QTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7343QTR?
For technical support, including AUIRF7343QTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7343QTR requirements.
6.How does Aetrix verify that AUIRF7343QTR is sourced from the original manufacturer or authorized distributors?
All AUIRF7343QTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7343QTR meets industry standards.
7.What is the process for return or replacement of AUIRF7343QTR?
All AUIRF7343QTR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7343QTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7343QTR part is unused and in its original packaging.
Return procedure for AUIRF7343QTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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