Infineon Technologies AUIRF7379Q

Overview

AUIRF7379Q from Infineon is an automotive-qualified dual-channel power MOSFET in SO-8 package, integrating one N-channel (30 V, 5.8 A, R_DS(on) = 38 mΩ @ 10 V) and one P-channel (−30 V, −4.3 A, R_DS(on) = 70 mΩ @ −10 V) device on a single die. It operates up to 150 °C junction temperature, supports logic-level gate drive (±20 V), and delivers fast switching (t_d(on) = 6.8 ns, t_d(off) = 22 ns) for half-bridge and load-switching roles in engine control units and body electronics.

For engineers reviewing the AUIRF7379Q datasheet, AUIRF7379Q pinout, AUIRF7379Q application, or AUIRF7379Q equivalent, key selection criteria include dual-channel complementary conduction, low R_DS(on) at 4.5 V gate drive, thermal robustness to 150 °C, and SO-8 surface-mount compatibility with board space reduction in automotive power stages.

Technical Context

This dual MOSFET implements complementary N- and P-channel HEXFET® silicon in a single SO-8 package, enabling compact high-side/low-side switching without external pairing. Its planar process achieves low on-resistance density and improved repetitive avalanche rating (I_DM = 46 A / −34 A), critical for transient load handling in 12 V automotive systems.

The device features matched dynamic parameters: Q_g = 25 nC per channel, C_iss = 520 pF (N-ch) / 440 pF (P-ch), and diode recovery t_rr = 47–80 ns with Q_rr ≤ 99 nC - supporting synchronous rectification and bidirectional current control in DC-DC converters and motor drivers.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-Mount, Dual-Channel, 150 °C rated). Pin assignments are validated per Infineon's top-view diagram: pins 1–4 serve the N-channel MOSFET (G1, D1, S1, S1); pins 5–8 serve the P-channel MOSFET (D2, D2, G2, S2), with shared source terminals internally isolated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.

Compared with AUIRF7379Q, IPB80P04P4L-04 offers lower R_DS(on) but sacrifices integration and package size, while SP8M8F improves N-ch performance at the cost of losing true complementary functionality - making AUIRF7379Q uniquely suited for space-constrained 12 V half-bridge designs requiring both polarities.

Availability

AUIRF7379Q is available at Aetrix Electronics and suitable for engine control units, body control modules, and electronic parking brake systems requiring stable component supply with AEC-Q101 qualification, 150 °C operation, and SO-8 surface-mount compatibility.

Supply support for AUIRF7379Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and AEC-Q101 validation infrastructure.

AUIRF7379Q belongs to Infineon's automotive-grade HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V power distribution, load switching, and motor control in harsh-temperature automotive environments.

FAQ

Is AUIRF7379Q pin-compatible with standard SO-8 MOSFETs?

No - AUIRF7379Q uses a non-standard pinout: pins 1–4 serve the N-channel device (G1/D1/S1/S1), while pins 5–8 serve the P-channel (D2/D2/G2/S2). Standard SO-8 single-channel MOSFETs assign gate, drain, source sequentially; this dual-channel layout requires dedicated PCB footprint alignment per Infineon's top-view diagram.

What is the maximum safe operating frequency for AUIRF7379Q in PWM applications?

Based on measured t_d(on)/t_d(off) (6.8 ns / 22 ns) and t_r/t_f (21 ns / 7.7 ns), AUIRF7379Q supports reliable operation up to 500 kHz in hard-switched topologies. At 1 MHz, gate drive losses increase significantly due to Q_g = 25 nC per channel, requiring optimized gate resistance and layout to maintain efficiency.

Does AUIRF7379Q require external gate resistors for automotive EMI compliance?

Yes - although its fast switching reduces conduction loss, uncontrolled edge rates cause radiated emissions. A 10 Ω series gate resistor per channel is recommended to limit dv/dt to ≤ 5 V/ns (within datasheet-rated peak diode recovery dv/dt), ensuring CISPR 25 Class 5 compliance in 12 V vehicle harnesses.

Can AUIRF7379Q replace discrete N+P MOSFET pairs in existing designs?

Yes, provided the PCB footprint matches Infineon's SO-8 dual-channel layout and thermal vias are placed under pins 3/4 (N-ch source) and pin 8 (P-ch source). Derating calculations must account for shared thermal resistance (R_θJA = 50 °C/W) - simultaneous N- and P-ch conduction increases junction temperature more than discrete devices with independent thermal paths.