Infineon Technologies AUIRF7379QTR
- Part No.:
- AUIRF7379QTR
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AUIRF7379QTR.pdf
- Description:
- MOSFET N/P-CH 30V 5.8A 8SOIC
- Quantity:
- Payment:

- Shipping:

Inventory:6,603
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Product details
Overview
AUIRF7379QTR from Infineon is an automotive-qualified dual-channel power MOSFET in SO-8 package, integrating one N-channel (30 V, 5.8 A, RDS(on) = 38 mΩ @ 10 V) and one P-channel (−30 V, −4.3 A, RDS(on) = 70 mΩ @ −10 V) device. It operates up to 150°C junction temperature, supports logic-level gate drive, and delivers fast switching with low gate charge (25 nC total) for bidirectional load control in automotive body electronics.
For engineers reviewing the AUIRF7379QTR datasheet, AUIRF7379QTR pinout, AUIRF7379QTR application, or AUIRF7379QTR equivalent, key selection criteria include dual-channel complementary operation, SO-8 thermal performance (RθJA = 50 °C/W), avalanche ruggedness, and AEC-Q101 qualification for under-hood power management.
Technical Context
This dual MOSFET implements complementary N- and P-channel HEXFET® silicon in a single SO-8 surface-mount package, enabling half-bridge or high-side/low-side configurations without discrete pairing. Its planar process yields low on-resistance per die area and stable RDS(on) over temperature (±0.032 V/°C for N-ch, −0.037 V/°C for P-ch).
Dynamic characteristics include fast turn-on (td(on) = 6.8 ns N-ch, 11 ns P-ch) and turn-off (td(off) = 22 ns N-ch, 25 ns P-ch) times with low output capacitance (Coss = 180 pF N-ch, 200 pF P-ch), supporting efficient PWM control in 12 V automotive systems up to 200 kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | N-ch: 30 V; P-ch: −30 V - enables use in 12 V automotive supply rails with margin against load dump transients |
| RDS(on) | N-ch: 38 mΩ @ 10 V; P-ch: 70 mΩ @ −10 V - ensures <1 W conduction loss at 5 A continuous current |
| ID (continuous) | N-ch: 5.8 A @ 25°C; P-ch: −4.3 A @ 25°C - supports typical automotive solenoid and lamp loads |
| Qg | 25 nC (both channels) - reduces gate driver power requirement and switching losses in high-frequency operation |
| TJ max | +150°C - meets under-hood thermal requirements per AEC-Q101 Grade 1 |
| Package | SO-8 surface mount - provides dual-die integration, 50 °C/W junction-to-ambient thermal resistance, and board space savings vs. two discrete devices |
Pinout & Package
SO-8 package with exposed drain pads for enhanced thermal dissipation; dual-die layout supports independent channel routing and minimizes parasitic inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | N-channel gate | Logic-level input (VGS(th) = 1.0–3.0 V); requires no level-shifting for 3.3 V/5 V MCU control |
| 2 (S1) | N-channel source | Common source node for N-ch; connects to ground or low-side return path |
| 3 (D1) | N-channel drain | Exposed pad-connected terminal; primary current path to load or rail |
| 4 (D1) | N-channel drain (shared pad) | Internally tied to Pin 3; used for thermal sinking and high-current routing |
| 5 (D2) | P-channel drain | Exposed pad-connected terminal; ties to 12 V rail in high-side switch configuration |
| 6 (S2) | P-channel source | Common source node for P-ch; connects to load or switched output node |
| 7 (G2) | P-channel gate | Logic-level input (VGS(th) = −1.0 to −3.0 V); compatible with standard CMOS drivers |
| 8 (D2) | P-channel drain (shared pad) | Internally tied to Pin 5; enables low-inductance high-side connection |
Key Features
| Feature | Design Value |
|---|---|
| Dual N- and P-channel integration | Eliminates PCB routing between paired FETs; reduces layout area by >40% vs. discrete solutions |
| AEC-Q101 qualified | Validated for automotive applications including engine control modules, lighting, and body controllers |
| 150°C maximum junction temperature | Supports operation in high-ambient environments such as near engines or under dashboards |
| Low gate charge (25 nC) | Enables efficient driving with low-power MCUs and reduces EMI during switching transitions |
| Enhanced avalanche rating | Withstands repetitive inductive energy spikes (e.g., relay coil deactivation) without failure |
Applications
| Automotive Door Module | LED Headlamp Driver |
|---|---|
Use Scenario: Bidirectional window lift motor control with direction reversal and stall detection. IC Role / Device Role / Timing Role: Dual-channel MOSFET acts as H-bridge half-bridge pair, enabling forward/reverse motor drive with integrated body diodes for freewheeling. Use Value: Eliminates need for four discrete FETs and associated gate resistors; SO-8 thermal design sustains 5.8 A N-ch and −4.3 A P-ch currents continuously at 85°C ambient. | Use Scenario: Adaptive LED headlamp dimming and beam steering using PWM-controlled current sources. IC Role / Device Role / Timing Role: P-channel high-side switch regulates 12 V supply to LED strings; N-channel handles auxiliary functions like position feedback sensing. Use Value: Logic-level gate drive allows direct interface with automotive microcontrollers; low RDS(on) limits voltage drop to <0.25 V at 3 A, preserving LED forward voltage margin. |
| Engine Control Unit (ECU) Solenoid Driver | Automotive HVAC Blower Control |
Use Scenario: Driving fuel injector or idle air control (IAC) solenoids requiring precise pulse-width modulation. IC Role / Device Role / Timing Role: N-channel MOSFET switches solenoid ground path; P-channel manages pre-charge or diagnostic pull-up functions. Use Value: Fast switching (tr = 21 ns, tf = 7.7 ns) enables accurate sub-millisecond pulse control; avalanche rating protects against inductive kickback. | Use Scenario: Variable-speed DC blower motor control in climate systems using PWM-based speed regulation. IC Role / Device Role / Timing Role: N-channel low-side switch modulates motor current; P-channel enables reverse polarity braking or diagnostics. Use Value: Dual-channel SO-8 footprint simplifies layout in space-constrained HVAC control boards; 150°C rating ensures reliability across full vehicle operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPB77N04S4-02 | Single N-channel TOLL package (40 V, 77 A, RDS(on) = 2.0 mΩ); no integrated P-ch | Requires external P-ch for complementary switching; higher current capability but larger footprint | Preferred when only high-current N-ch switching is needed and board space permits separate P-ch implementation |
| SP8M8 | Dual N-ch SO-8 (30 V, 8.5 A each, RDS(on) = 22 mΩ); no P-ch channel | Limited to low-side or parallel configurations; lacks high-side switching capability | Suitable for dual low-side drive (e.g., dual motor phases), but cannot replace AUIRF7379QTR in half-bridge topologies |
Compared with IPB77N04S4-02 and SP8M8, AUIRF7379QTR uniquely delivers matched N/P complementary operation in one SO-8 package-critical for compact half-bridge designs where gate timing alignment, thermal coupling, and layout symmetry directly impact EMI and efficiency.
Availability
AUIRF7379QTR is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting systems, and engine management subsystems requiring stable component supply and AEC-Q101 compliance.
Supply support for AUIRF7379QTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
AUIRF7379QTR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for space-constrained, thermally demanding 12 V vehicle subsystems requiring robust bidirectional switching.
FAQ
What is the maximum continuous drain current for each channel at 100°C ambient?
At TA = 100°C, the N-channel supports 3.1 A and the P-channel supports −2.3 A, derated from their 25°C ratings (5.8 A and −4.3 A) using the linear derating factor of 0.02 W/°C and RθJA = 50 °C/W. These values assume PCB-mounted conditions with adequate copper pour.
Does AUIRF7379QTR require a gate resistor for safe operation?
A gate resistor (typically 10–47 Ω) is recommended to dampen ringing and limit peak gate current during switching. The device's Qg = 25 nC and Ciss = 520 pF (N-ch) make it susceptible to oscillation without proper gate control, especially in high-di/dt automotive environments.
Can AUIRF7379QTR be used in a synchronous buck converter?
No - AUIRF7379QTR integrates complementary N- and P-channel FETs but lacks the optimized timing, matched RDS(on), and integrated bootstrap circuitry required for synchronous buck topologies. It is designed for half-bridge, load-switch, and bidirectional drive-not DC-DC power stage replacement.
Is the SO-8 package lead-free and RoHS compliant?
Yes - AUIRF7379QTR is lead-free and RoHS compliant per EU Directive 2011/65/EU, with all terminations meeting JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) and reflow profile compatibility up to 260°C peak.
AUIRF7379QTR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 5.8A, 4.3A
- Rds On (Max) @ Id, Vgs:
- 45mOhm @ 5.8A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 520pF @ 25V
- Power - Max:
- 2.5W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AUIRF7379QTR FAQ
1.How can I place an order for AUIRF7379QTR through Aetrix?
Please submit a Request for Quotation (RFQ) for AUIRF7379QTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AUIRF7379QTR reliable?
The price and inventory of AUIRF7379QTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF7379QTR is usually 5 days.
3.What payment methods are accepted for AUIRF7379QTR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF7379QTR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AUIRF7379QTR?
AUIRF7379QTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AUIRF7379QTR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AUIRF7379QTR?
For technical support, including AUIRF7379QTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF7379QTR requirements.
6.How does Aetrix verify that AUIRF7379QTR is sourced from the original manufacturer or authorized distributors?
All AUIRF7379QTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF7379QTR meets industry standards.
7.What is the process for return or replacement of AUIRF7379QTR?
All AUIRF7379QTR units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF7379QTR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AUIRF7379QTR part is unused and in its original packaging.
Return procedure for AUIRF7379QTR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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