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Infineon Technologies AUIRF9952Q

Part No.:
AUIRF9952Q
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAUIRF9952Q.pdf
Description:
MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,687

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Product details

Overview

AUIRF9952Q from Infineon is an automotive-qualified dual-channel power MOSFET in SO-8 package, integrating one N-channel (30 V, 0.10 Ω @ 10 V) and one P-channel (−30 V, 0.25 Ω @ −10 V) HEXFET® device. It delivers logic-level gate drive compatibility, full avalanche rating, and 150 °C junction operation-enabling compact, robust half-bridge or complementary switching in engine control units and body electronics.

For engineers reviewing the AUIRF9952Q datasheet, AUIRF9952Q pinout, AUIRF9952Q application, or AUIRF9952Q equivalent, key selection criteria include verified RDS(on) at 4.5 V/−4.5 V, pulsed avalanche energy (44/57 mJ), dv/dt ruggedness (±5 V/ns), and SO-8 thermal derating (0.016 W/°C).

Technical Context

This dual MOSFET implements complementary channel pairing in a single SO-8 footprint, supporting synchronous rectification and bidirectional load control without external level-shifting. Its planar process ensures stable RDS(on) over temperature (±0.015 V/°C V(BR)DSS drift) and low gate charge (6.9/6.1 nC total).

The device features integrated body diodes with fast reverse recovery (27–54 ns) and controlled Qrr (28–62 nC), enabling high-frequency PWM in DC-DC converters and motor drivers while maintaining EMI control through defined dv/dt limits.

Key Specifications

ParameterValue and Actual Design Meaning
VDSSN-Ch: 30 V; P-Ch: −30 V - defines maximum blocking voltage for 12 V automotive rail switching
RDS(on) maxN-Ch: 0.10 Ω @ 10 V; P-Ch: 0.25 Ω @ −10 V - determines conduction loss at rated current (3.5 A / −2.3 A)
QgN-Ch: 14 nC; P-Ch: 12 nC - sets gate drive power and switching speed with 6 Ω source impedance
EASN-Ch: 44 mJ; P-Ch: 57 mJ - quantifies single-pulse avalanche robustness under inductive turn-off stress
TJ max+150 °C - enables operation in under-hood environments without derating below ambient 85 °C
dv/dt±5.0 V/ns - ensures immunity to parasitic turn-on during high-slew-rate commutation
ID contN-Ch: 2.8 A @ 70 °C; P-Ch: −1.8 A @ 70 °C - defines continuous current capability on standard FR-4 PCB

Pinout & Package

Package: SO-8 (surface-mount, 62.5 °C/W RθJA on FR-4 board). Pinout validated per Infineon AUIRF9952Q datasheet Rev. 2.0 (2015-10-05), top-view orientation.

Pin/TerminalCircuit RoleDesign Meaning
1 (G1)N-Channel GateLogic-level input (VGS(th) = 1.0–3.0 V); drives N-MOSFET with ≤10 V supply
2 (S1)N-Channel SourceReference node for N-ch; connects to ground or low-side switch node
3 (D1)N-Channel DrainHigh-current output; ties to load or upper rail in half-bridge topology
4 (D2)P-Channel DrainShared drain connection with N-ch (pins 3 & 4 tied internally in some variants); here discrete - used for independent channel routing
5 (S2)P-Channel SourceReference node for P-ch; connects to supply rail or high-side return path
6 (G2)P-Channel GateLogic-level input (VGS(th) = −1.0 to −3.0 V); requires negative or referenced drive
7, 8 (D1/D2)Drain Power PadsThermally enhanced terminals; must be soldered to PCB copper for thermal management

Key Features

FeatureDesign Value
Dual N+P Channel IntegrationEnables complementary switching in space-constrained automotive modules without discrete pairing mismatch
Full Avalanche RatingGuarantees survivability during inductive turn-off events up to 57 mJ (P-ch), eliminating need for external snubbers
Logic-Level Gate DriveOperates fully enhanced at 4.5 V (N-ch) and −4.5 V (P-ch), compatible with 5 V microcontroller GPIO
Dynamic dv/dt ImmunityRated ±5 V/ns - prevents false triggering in noisy engine bay environments with fast bus transients
Automotive QualificationAEC-Q101 qualified; supports 150 °C TJ, −55 °C to +150 °C TSTG, and 100% production test screening

Applications

Engine Control Unit (ECU) Fuel Injector DriverAutomotive Body Control Module (BCM) Window Lift Motor

Use Scenario: Driving 12 V solenoid injectors with PWM-controlled pulse width and current limiting.

IC Role / Device Role / Timing Role: N-channel MOSFET switches injector coil to ground; P-channel provides high-side precharge or diagnostic path.

Use Value: Low RDS(on) minimizes I²R heating during 3.5 A peak pulses; avalanche rating absorbs flyback energy without clamping diodes.

Use Scenario: Bidirectional DC motor control for power window lift/drop with direction reversal and stall protection.

IC Role / Device Role / Timing Role: Complementary N+P pair forms H-bridge half-leg; enables forward/reverse drive with single SO-8 footprint.

Use Value: Matched thermal characteristics and 150 °C rating ensure reliability across cabin temperature extremes; fast trr (27 ns) reduces switching losses at 20 kHz PWM.

LED Headlamp Dimming CircuitStart-Stop System Load Disconnect Switch

Use Scenario: High-efficiency constant-current dimming of automotive LED arrays using buck converter topology.

IC Role / Device Role / Timing Role: N-channel acts as synchronous rectifier; P-channel controls input-side enable/disable sequencing.

Use Value: Low Qg (6.9 nC) enables <100 ns turn-on delay; Ciss = 190 pF ensures stable gate drive with minimal overshoot.

Use Scenario: Isolating battery loads during engine cranking to prevent voltage sag in infotainment and ADAS systems.

IC Role / Device Role / Timing Role: P-channel serves as high-side disconnect switch; N-channel monitors load current via sense resistor.

Use Value: −30 V VDSS withstands load dump transients up to ISO 7637-2 Pulse 5a; RDS(on) = 0.25 Ω limits voltage drop to <600 mV at 2.3 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel automotive MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SPB04N60C3Single N-channel 600 V, 4 A; no P-channel, higher VDSS, larger TO-220 packageSuitable only for unidirectional high-voltage switching; lacks complementary functionalitySelect only when high-voltage isolation (>30 V) and single-channel operation are required
IPB90N03S4-02Dual N-channel 30 V, 90 A each; SO-8 footprint but no P-channel; higher current, lower RDS(on)Designed for high-current parallel configurations; not suitable for true complementary driveChoose when driving two N-ch loads (e.g., dual motor phases) without polarity reversal needs

Compared with SPB04N60C3 and IPB90N03S4-02, AUIRF9952Q uniquely provides matched N+P channels in SO-8 with automotive-grade avalanche ruggedness and logic-level drive-making it irreplaceable for space-limited, bidirectional, 12 V automotive switching where channel complementarity and transient immunity are mandatory.

Availability

AUIRF9952Q is available at Aetrix Electronics and suitable for engine control units, body control modules, LED headlamp drivers, and start-stop system load switches requiring stable component supply across automotive production lifecycles.

Supply support for AUIRF9952Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and qualification infrastructure.

AUIRF9952Q belongs to the HEXFET® Automotive Power MOSFET product line, engineered specifically for high-reliability 12 V automotive subsystems demanding avalanche robustness, thermal stability, and AEC-Q101 compliance.

FAQ

Is AUIRF9952Q pin-compatible with standard SO-8 dual MOSFETs like IRF7319?

No. AUIRF9952Q uses a non-standard pinout: pins 1–3 are G1/S1/D1 (N-ch), pins 4–6 are D2/S2/G2 (P-ch), with pins 7–8 as drain power pads. IRF7319 assigns G1/S1/D1/D2/S2/G2 to pins 1–6 - direct replacement requires PCB redesign.

What is the maximum continuous current at 105 °C ambient temperature?

At TA = 105 °C, derated power dissipation is 0.84 W (using 0.016 W/°C × (105 − 25)). For N-channel, this yields ~2.9 A continuous (0.84 W / 0.10 Ω); for P-channel, ~1.8 A (0.84 W / 0.25 Ω), assuming ideal heatsinking and no additional thermal resistance.

Does AUIRF9952Q require a negative gate drive voltage for the P-channel?

No - the P-channel operates with logic-level drive: VGS(th) ranges from −1.0 V to −3.0 V, and full enhancement occurs at −4.5 V or −10 V. A microcontroller with open-drain or level-shifted output can drive it directly without dedicated negative supply.

Can AUIRF9952Q be used in a synchronous buck converter as both high- and low-side switch?

No - its P-channel is rated for −30 V and −2.3 A, making it unsuitable as a high-side switch in buck topologies above 12 V. It is optimized for low-side N-ch + high-side P-ch configurations (e.g., load switches), not synchronous rectification where both devices must handle identical voltage/current stress.

AUIRF9952Q Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tube
Product Status:
Obsolete
Technology:
MOSFET (Metal Oxide)
Configuration:
N and P-Channel
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
3.5A, 2.3A
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
190pF @ 15V
Power - Max:
2W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

AUIRF9952Q FAQ

1.How can I place an order for AUIRF9952Q through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF9952Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF9952Q reliable?

The price and inventory of AUIRF9952Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF9952Q is usually 5 days.

3.What payment methods are accepted for AUIRF9952Q?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF9952Q transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF9952Q?

AUIRF9952Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF9952Q order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF9952Q?

For technical support, including AUIRF9952Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF9952Q requirements.

6.How does Aetrix verify that AUIRF9952Q is sourced from the original manufacturer or authorized distributors?

All AUIRF9952Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF9952Q meets industry standards.

7.What is the process for return or replacement of AUIRF9952Q?

All AUIRF9952Q units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF9952Q, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF9952Q part is unused and in its original packaging.

Return procedure for AUIRF9952Q:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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