Infineon Technologies AUIRFN8458TR

Overview

AUIRFN8458TR from Infineon Technologies (formerly International Rectifier) is an automotive-grade dual N-channel HEXFET® Power MOSFET in a 5 mm × 6 mm PQFN package, rated for 40 V V_DSS, 8.0 mΩ typical R_DS(on) at 10 V V_GS, and 43 A continuous drain current at T_C = 25°C. It operates up to 175°C junction temperature and supports repetitive avalanche, making it suitable for high-efficiency 12 V automotive power stages including motor control and braking circuits.

For engineers reviewing the AUIRFN8458TR datasheet, AUIRFN8458TR pinout, AUIRFN8458TR application, or AUIRFN8458TR equivalent, this page delivers verified electrical specs, thermal performance data, dual-channel gate drive behavior, and automotive-qualified reliability metrics - all critical for motor driver, DC-DC converter, and load switch design validation.

Technical Context

This dual MOSFET integrates two matched N-channel silicon die in a thermally enhanced PQFN package with bottom-side thermal pad. Each channel shares common source connection and independent gate/drain terminals, enabling half-bridge or synchronous rectifier configurations without external paralleling.

It features ultra-low R_DS(on) (8.0 mΩ typ.), fast switching (t_r = 71 ns, t_f = 19 ns), and robust body diode performance (V_SD = 1.3 V at 26 A, t_rr = 18 ns at 25°C), optimized for high-frequency PWM operation in automotive 12 V systems under harsh thermal and EMI conditions.

Key Specifications

Pinout & Package

The AUIRFN8458TR uses a Dual PQFN 5 mm × 6 mm package with exposed thermal pad on the bottom side. Pin 1 is marked by a dot or notch; the device contains two identical N-channel MOSFETs sharing a common source terminal (S1/S2 tied internally).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and NTMFS4C09NT1G, the AUIRFN8458TR offers optimal balance of low R_DS(on), moderate gate charge, and monolithic dual-channel integration - delivering superior thermal coupling, reduced layout complexity, and guaranteed parameter matching for safety-critical automotive functions.

Availability

AUIRFN8458TR is available at Aetrix Electronics and suitable for automotive HVAC systems, electronic parking brake actuators, and 12 V start-stop load switching requiring stable component supply across extended temperature and lifecycle demands.

Supply support for AUIRFN8458TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with deep expertise in silicon-based power devices.

The AUIRFN8458TR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12 V vehicle subsystems demanding robustness against thermal stress, voltage transients, and mechanical vibration.

FAQ

What is the maximum allowable case temperature for continuous operation?

The AUIRFN8458TR supports continuous operation up to T_C = 100°C, delivering 30 A per channel at that temperature. Derating follows a linear factor of 0.23 W/°C beyond 25°C ambient, and thermal design must account for R_θJC(bottom) = 4.4 °C/W to ensure T_J ≤ 175°C under worst-case load and ambient conditions.

Does the device support gate drive at 5 V logic levels?

No - the gate threshold voltage V_GS(th) ranges from 2.2 V to 3.9 V, but R_DS(on) is specified only at V_GS = 10 V. At 5 V, R_DS(on) increases significantly (≈25 mΩ typ.), causing excessive conduction loss; a 10 V gate drive is mandatory for rated performance and thermal safety.

How is the common source connection implemented internally?

The S1 and S2 terminals are bonded together inside the PQFN package to a shared copper clip, forming a low-inductance, low-resistance common source node. This eliminates external parallel traces and ensures matched channel characteristics - essential for balanced current sharing in half-bridge topologies.

Is the body diode suitable for synchronous rectification in DC-DC converters?

Yes - the body diode exhibits t_rr = 18 ns at 25°C and dv/dt capability of 8.2 V/ns at T_J = 175°C, enabling use in synchronous buck converters up to ~300 kHz. However, its V_SD = 1.3 V at 26 A is higher than discrete Schottky diodes, so efficiency gain depends on duty cycle and load current.