Infineon Technologies AUIRFN8459TR

Overview

AUIRFN8459TR from Infineon Technologies (formerly International Rectifier) is an automotive-grade dual N-channel HEXFET® Power MOSFET in a 5×6 mm PQFN package, rated for 40 V V_DSS, 4.8 mΩ typical R_DS(on) at 10 V_GS, 70 A silicon-limited continuous drain current, and 175°C maximum junction temperature. It serves as a high-efficiency synchronous rectifier or half-bridge switch in 12 V automotive power stages such as brushed DC motor control and transmission solenoid drivers.

For engineers reviewing the AUIRFN8459TR datasheet, AUIRFN8459TR pinout, AUIRFN8459TR application, or AUIRFN8459TR equivalent, key selection criteria include its dual-die layout with isolated source terminals, thermally enhanced bottom-side cooling, repetitive avalanche capability up to T_jmax, and qualification per AEC-Q101 for under-hood environments.

Technical Context

This device integrates two identical N-channel enhancement-mode MOSFETs in a single Dual PQFN 5×6 mm package with exposed thermal pad on the bottom surface. Each channel features independent gate, drain, and source terminals-no internal connection between dies-enabling flexible half-bridge, parallel, or dual-switch configurations.

Its design emphasizes robustness in automotive transients: 110 mJ tested single-pulse avalanche energy, 7.0 V/ns diode dv/dt rating at 175°C, and 22 ns reverse recovery time at 25°C support reliable operation during inductive load switching and load dump events without external snubbers.

Key Specifications

Pinout & Package

The AUIRFN8459TR uses a Dual PQFN 5×6 mm package with thermally enhanced bottom-side copper pad and dual-side terminal layout. Pin 1 is marked by a dot or beveled corner; the package has no leads and requires solder reflow mounting with stencil-defined paste volume per AN-1136.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and NTMFS5C673NL, the AUIRFN8459TR delivers unique value through its dual-die architecture with electrically isolated sources-enabling compact, functionally safe H-bridge implementations with built-in redundancy and sensing capability not achievable with single-channel alternatives.

Availability

AUIRFN8459TR is available at Aetrix Electronics and suitable for automotive powertrain control, body electronics, and chassis systems requiring stable component supply, AEC-Q101 compliance, and long-term lifecycle continuity.

Supply support for AUIRFN8459TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive microcontrollers, and sensor solutions, with core expertise in high-reliability silicon and wide-bandgap technologies.

The AUIRFN8459TR belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for demanding 12 V vehicle subsystems where thermal resilience, avalanche robustness, and functional safety are mandatory.

FAQ

What is the thermal resistance from junction to case (R_θJC) for AUIRFN8459TR?

The junction-to-case thermal resistance is 3.0°C/W when measured from the die to the bottom thermal pad under board-mounted, still-air conditions. This value assumes full solder coverage of the exposed pad to a 4-layer PCB with ≥2 oz copper and thermal vias-critical for achieving rated 50 W power dissipation.

Does AUIRFN8459TR support synchronous rectification in DC-DC converters?

Yes-its 4.8 mΩ R_DS(on), fast switching (10 ns td(on), 25 ns td(off)), and low Q_gd/Q_gs ratio enable efficient synchronous rectification in 12 V automotive buck converters. However, external gate drive timing must prevent shoot-through due to independent gate terminals.

Is the body diode optimized for reverse recovery in high-di/dt applications?

Yes-the body diode exhibits 22 ns reverse recovery time at 25°C and 7.0 V/ns peak dv/dt rating at 175°C, validated for brushed motor commutation and solenoid flyback. Its Q_rr of 17 nC minimizes stored charge loss during hard commutation.

How is pin 1 identified on the AUIRFN8459TR package?

Pin 1 is marked by a laser-etched dot or beveled corner on the top surface of the Dual PQFN 5×6 mm package. The marking code "XXXX XYWWX" appears adjacent to Pin 1, with "X" denoting part number digits and "YWWX" indicating assembly site and date code per IR SCOP 200-002.