Diodes Incorporated BS107PSTOA

Overview

BS107PSTOA from Diodes Incorporated is a 200V N-channel enhancement-mode vertical DMOSFET in E-Line (TO-92 compatible) package, rated for 120mA continuous drain current, 23Ω R_DS(ON) at V_GS = 2.6V, and 500mW power dissipation-used in low-power switching applications such as LED drivers and signal-level load control in industrial sensor interfaces.

For engineers reviewing the BS107PSTOA datasheet, BS107PSTOA pinout, BS107PSTOA application, or BS107PSTOA equivalent, key selection criteria include verified V_DSS ≥ 200V, gate threshold voltage range (1.0–3.0V), thermal resistance (R_θJA = 200°C/W), JEDEC-qualified reliability, and lead-free/Green compliance for embedded control designs.

Technical Context

This DMOSFET operates in enhancement mode with a single-gate structure optimized for low-voltage logic-level drive compatibility. Its 200V breakdown voltage and 120mA ID rating support operation in 24V industrial I/O circuits and isolated signal switching where high V_GS margin is not required.

Thermal design relies on its 200°C/W junction-to-ambient resistance under standard FR-4 mounting, while its 71°C/W junction-to-leads resistance enables localized heat transfer through the drain lead-critical for compact PCB layouts without heatsinking.

Key Specifications

Pinout & Package

E-Line (TO-92 compatible) plastic package with matte tin-plated leads; 0.159g weight; UL 94V-0 flammability rating; flat-face orientation with ejection mark.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-power MOSFET applications.

Compared with ZVN2110A and DMN2004LK-7, BS107PSTOA uniquely balances 200V capability, logic-level gate drive, and through-hole E-Line packaging-making it irreplaceable in 24–48V industrial control where voltage margin and mechanical robustness are critical.

Availability

BS107PSTOA is available at Aetrix Electronics and suitable for industrial sensor interfaces, LED indicator drivers, low-power relay drivers, and signal-level multiplexers requiring stable component supply and long-term manufacturability.

Supply support for BS107PSTOA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, computing, and consumer markets.

The BS107PSTOA belongs to Diodes' E-Line MOSFET product line, designed specifically for cost-sensitive, low-power switching applications requiring rugged through-hole packaging and JEDEC-qualified reliability.

FAQ

What is the maximum gate-source voltage rating for BS107PSTOA?

The absolute maximum gate-source voltage (V_GS) is ±20V. Exceeding this risks permanent gate oxide damage. For reliable operation, keep V_GS within 0–5V during normal switching, as the device fully enhances at V_GS ≥ 3.0V and exhibits low R_DS(ON) down to 2.6V per datasheet testing conditions.

Can BS107PSTOA be used in automotive applications?

BS107PSTOA itself is not AEC-Q101 qualified, but Diodes offers automotive-grade variants (e.g., BS107Q) with PPAP documentation and IATF 16949 manufacturing. Use BS107PSTOA only in non-safety-critical, non-automotive environments unless explicitly validated per AEC-Q101 test reports.

How does thermal resistance affect PCB layout for BS107PSTOA?

R_θJA = 200°C/W assumes a minimum copper pad layout on single-sided FR-4 with 12mm lead length. To maintain T_J < 150°C at 500mW, increase copper area around the drain lead and minimize trace length-especially since R_θJL = 71°C/W indicates the drain lead is the dominant thermal path.

Is BS107PSTOA pin-compatible with other TO-92 MOSFETs?

Yes-it uses standard E-Line (TO-92 compatible) pinout (G-D-S, flat-face view), matching industry-standard footprint and lead spacing. However, electrical parameters (e.g., V_DSS, R_DS(ON)) differ significantly from generic TO-92 FETs like 2N7000, so functional substitution requires validation against voltage, current, and thermal requirements.