Diodes Incorporated BS250PSTOB

Overview

BS250P from Diodes Incorporated is a P-channel enhancement-mode vertical DMOS FET designed for low-power switching in automotive and industrial control circuits. It features V_DS = −45 V, R_DS(ON) = 14 Ω at V_GS = −10 V and I_D = −200 mA, −230 mA continuous drain current, and operates across −55 °C to +150 °C. It is qualified to AEC-Q101 and manufactured in IATF 16949-certified facilities.

For engineers reviewing the BS250P datasheet, BS250P pinout, BS250P application, or BS250P equivalent, key selection criteria include its negative threshold voltage (−1 to −3.5 V), low gate charge enabling fast switching (t_ON/t_OFF ≤ 20 ns), and suitability for high-reliability 12 V automotive load switching where space-constrained TO-92 packages are required.

Technical Context

This discrete MOSFET uses vertical DMOS construction to achieve stable R_DS(ON) over temperature and robust avalanche capability. Its gate threshold voltage range (−1 to −3.5 V) ensures reliable turn-on with standard logic-level drive in low-side switch configurations.

Electrical behavior is characterized under pulsed conditions (300 µs pulse width, ≤2% duty cycle) for R_DS(ON) and g_fs, and switching times are measured with 50 Ω source impedance and sub-5 ns rise time. Input capacitance C_iss is 60 pF at V_DS = −10 V, supporting efficient gate driving in compact DC-DC and LED driver topologies.

Key Specifications

Pinout & Package

BS250P is supplied in a TO-92 plastic package with leads arranged in straight-line configuration. Pin identification follows standard TO-92 orientation: viewed from bottom (flat side up, leads down), left-to-right pins are Source, Gate, Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with ZVP2106A and DMG3415L, BS250P offers the best balance of AEC-Q101 qualification, TO-92 through-hole compatibility, and cost-effective 230 mA switching-making it optimal for legacy automotive modules and manual-assembled industrial controls where footprint and qualification outweigh raw performance.

Availability

BS250P is available at Aetrix Electronics and suitable for automotive interior lighting control, industrial sensor power switching, USB port power management, and small-signal relay driver applications requiring stable component supply and long-term lifecycle support.

Supply support for BS250P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BS250P belongs to Diodes' automotive-qualified discrete MOSFET product line, engineered specifically for robust, low-power switching in harsh-environment 12 V systems including body electronics and sensor interfaces.

FAQ

Is BS250P suitable for high-side switching configurations?

Yes, BS250P can be used in high-side configurations when paired with appropriate gate-level shifting circuitry, such as a charge pump or dedicated high-side driver IC. Its −45 V V_DS rating and −1 to −3.5 V V_GS(TH) allow reliable operation with 12 V rail referenced gate control, though external level translation is required for direct microcontroller interfacing.

What is the maximum junction temperature during continuous operation?

The BS250P has a maximum junction temperature (T_J) of +150 °C, with thermal resistance R_θJA of 179 °C/W (typical, TO-92, free air). At 700 mW dissipation, junction temperature rise is ~127 °C above ambient-so continuous operation at full power requires ambient ≤23 °C or heatsinking to remain within safe limits.

Does BS250P have built-in ESD protection?

No, BS250P does not integrate on-die ESD protection diodes. Its gate oxide is rated for ±20 V V_GS, but real-world handling requires external 10 kΩ series gate resistor and/or TVS clamp to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV, especially in manual assembly environments.

Can BS250P replace a general-purpose PNP transistor in existing designs?

Yes, BS250P can replace low-current PNP transistors like BC807 or MMBT3906 in saturated-switch roles, offering lower V_CE(sat) equivalent (via R_DS(ON) × I_D), faster switching, and no base current requirement. However, gate drive polarity must be inverted (active-low vs active-high), and layout must accommodate TO-92 mechanical dimensions and lead spacing.