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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated BS250PSTZ

Name: BS250PSTZ
Brand: Diodes Incorporated
SKU: BS250PSTZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BS250PSTZ

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: E-Line-3

Datasheet:: BS250PSTZ.pdf

Description:: MOSFET P-CH 45V 230MA E-LINE

Quantity:: RFQ Add To RFQ list

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Inventory:7,505

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Product details

Overview

BS250P from Diodes Incorporated is a P-channel enhancement-mode vertical DMOS FET rated for -45 V drain-source voltage, 14 Ω R_DS(ON) at V_GS = -10 V and I_D = -200 mA, and -230 mA continuous drain current at +25°C - used as a low-side load switch in automotive body electronics and industrial power management circuits.

For engineers reviewing the BS250P datasheet, BS250P pinout, BS250P application, or BS250P equivalent, key selection criteria include verified AEC-Q101 qualification status, gate threshold voltage range (-1 to -3.5 V), pulsed current capability (-3 A), thermal derating behavior above +25°C, and compatibility with 3.3 V/5 V logic-level gate drive in discrete switching topologies.

Technical Context

This device operates as a normally-off P-channel MOSFET with vertical DMOS construction optimized for low R_DS(ON) and fast switching (t_ON/t_OFF ≤ 20 ns each). Its gate threshold voltage range (-1 to -3.5 V) enables reliable turn-on with standard CMOS/TTL logic levels when referenced to source.

Designed for surface-mount applications in space-constrained PCBs, it supports pulsed drain currents up to -3 A under defined test conditions (pulse width = 300 µs, duty cycle ≤ 2%) and exhibits input capacitance (C_iss) of 60 pF at V_DS = -10 V, enabling predictable gate drive sizing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-45 V - maximum blocking voltage before avalanche conduction in reverse-biased drain-source path
R_DS(ON)	14 Ω @ V_GS = -10 V, I_D = -200 mA - defines on-state power loss (P = I²R) in DC load switching
I_D (continuous)	-230 mA @ T_A = +25°C - usable steady-state current before thermal shutdown at ambient temperature
V_GS(TH)	-1 to -3.5 V @ I_D = -1 mA - gate voltage range ensuring consistent turn-on across process variation
t_ON/t_OFF	≤ 20 ns each - enables high-frequency PWM control up to ~10 MHz with minimal dead-time overhead
C_iss	60 pF @ V_GS = 0 V, V_DS = -10 V - determines required gate charge and driver strength for target slew rate
P_TOT	700 mW @ T_A = +25°C - sets maximum dissipation without heatsinking; derates linearly above +25°C

Pinout & Package

BS250P is housed in the SOT-23 package - a 3-pin, surface-mount plastic case with gull-wing leads, optimized for automated placement and reflow soldering in high-volume production.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Current return path for P-channel conduction	Connected to higher potential rail; defines reference for V_GS control and carries full load current
2 (Gate)	Control electrode for channel formation	Receives negative-going logic signal relative to source; requires <1.2 nC total gate charge for full turn-on
3 (Drain)	Current entry point into channel	Connected to load; withstands up to -45 V reverse bias and conducts -230 mA continuously at +25°C

Key Features

Feature	Design Value
P-channel enhancement mode	Ensures default-OFF operation - eliminates need for external pull-up resistors in high-side configurations
AEC-Q101 qualified	Validated for automotive use including temperature cycling, HTRB, and ESD testing per stress test plan
Vertical DMOS structure	Delivers lower R_DS(ON) per die area than planar MOSFETs, improving power density in compact layouts
Fast switching (20 ns)	Reduces transition losses in PWM-driven loads such as LED drivers and solenoid controllers
IATF 16949 manufacturing	Guarantees traceable lot control, PPAP documentation support, and zero-defect production discipline

Applications

Automotive Door Module

Industrial Sensor Power Switch

Use Scenario: Controlling window lift motor enable/disable in OEM door control units.

IC Role / Device Role / Timing Role: Low-side switch disconnecting 12 V supply to motor during sleep mode or fault condition.

Use Value: 14 Ω R_DS(ON) limits standby current to <10 µA while supporting 230 mA peak motor start surge.

Use Scenario: Enabling/disabling 5 V power to analog pressure sensors in factory automation nodes.

IC Role / Device Role / Timing Role: Discrete load switch isolating sensor supply to reduce system quiescent current during idle cycles.

Use Value: Gate threshold (-1 to -3.5 V) ensures clean turn-on with microcontroller GPIO without level-shifting.

USB-C Port Protection

Smart Lighting Dimming Circuit

Use Scenario: Reverse-polarity protection and overcurrent cutoff for USB-C VBUS line in portable docking stations.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode with gate driven by comparator output.

Use Value: -45 V V_DS rating accommodates transient surges up to ±30 V without breakdown.

Use Scenario: PWM-controlled current sink for constant-current LED strings in architectural lighting controls.

IC Role / Device Role / Timing Role: Low-side switching element modulating LED current at 1–10 kHz frequency.

Use Value: 20 ns switching time minimizes distortion in dimming waveform and reduces audible noise in magnetics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVP2106A	R_DS(ON) = 12 Ω @ V_GS = -10 V; V_DS = -60 V; C_iss = 50 pF	Higher voltage rating allows use in 24 V systems; slightly lower on-resistance improves efficiency at higher currents	Select when operating beyond 15 V nominal rails or requiring tighter R_DS(ON) tolerance
DMG2305U	R_DS(ON) = 45 mΩ @ V_GS = -4.5 V; V_DS = -20 V; SOT-23 footprint identical	Optimized for 3.3 V logic drive; unsuitable for >20 V applications due to lower V_DS	Choose for ultra-low-threshold, low-voltage battery-powered designs where gate drive is limited to 3.3 V

Compared with ZVP2106A and DMG2305U, BS250P offers balanced performance for 12 V automotive and industrial switching - delivering adequate R_DS(ON) and voltage margin without over-specifying cost or size, while maintaining full AEC-Q101 compliance and IATF 16949 traceability.

Availability

BS250P is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor interface boards, and smart lighting power stages requiring stable component supply and long-term lifecycle assurance.

Supply support for BS250P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BS250P belongs to Diodes' Automotive-Grade Power MOSFET product line, engineered specifically for robust, low-power switching in harsh-environment vehicle subsystems and industrial control equipment.

FAQ

Is BS250P qualified to AEC-Q101?

Yes, BS250P is explicitly qualified to AEC-Q101 Rev. D for automotive applications. It undergoes stress testing including HTGB, HTRB, TC, and ESD per the standard's requirements, and is manufactured in IATF 16949-certified facilities with PPAP documentation available upon request.

What is the maximum allowable junction temperature for BS250P?

The BS250P has an absolute maximum junction temperature (T_J) of +150°C. Derating begins at +25°C ambient, with power dissipation decreasing linearly to zero at +150°C case temperature under specified mounting conditions.

Can BS250P be driven directly from a 3.3 V microcontroller GPIO?

No - its gate threshold voltage range (-1 to -3.5 V) requires a negative gate-source bias relative to source. To drive it from a 3.3 V GPIO, a level-shifting circuit or inverting driver stage is necessary to generate sufficient V_GS swing (e.g., -10 V) for full enhancement.

Does BS250P have integrated ESD protection?

BS250P includes inherent gate oxide ESD robustness per HBM Class 1B (≥500 V), but no dedicated on-die ESD clamp diodes. External TVS or RC filtering is recommended in high-noise environments such as automotive CAN/LIN bus proximity or motor drive zones.

BS250PSTZ Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: E-Line-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 45 V

Current - Continuous Drain (Id) @ 25°C:: 230mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14Ohm @ 200mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 60 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 700mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: E-Line (TO-92 compatible)

BS250PSTZ FAQ

1.How can I place an order for BS250PSTZ through Aetrix?

Please submit a Request for Quotation (RFQ) for BS250PSTZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BS250PSTZ reliable?

The price and inventory of BS250PSTZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BS250PSTZ is usually 5 days.

3.What payment methods are accepted for BS250PSTZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BS250PSTZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BS250PSTZ?

BS250PSTZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BS250PSTZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BS250PSTZ?

For technical support, including BS250PSTZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BS250PSTZ requirements.

6.How does Aetrix verify that BS250PSTZ is sourced from the original manufacturer or authorized distributors?

All BS250PSTZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BS250PSTZ meets industry standards.

7.What is the process for return or replacement of BS250PSTZ?

All BS250PSTZ units undergo pre-shipment inspection (PSI). If there is an issue with BS250PSTZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BS250PSTZ part is unused and in its original packaging.

Return procedure for BS250PSTZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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