Diodes Incorporated BS870-7

Overview

BS870-7 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in SOT23 package, rated for 60V V_DSS, 5Ω R_DS(ON) @ V_GS = 10V, and 250mA continuous drain current. It delivers low gate threshold (1.0–3.0V), fast switching (t_D(ON) ≤ 20ns), and low input capacitance (C_iss ≤ 50pF), enabling efficient logic-level switching in compact power management circuits.

For engineers reviewing the BS870-7 datasheet, BS870-7 pinout, BS870-7 application, or BS870-7 equivalent, key selection criteria include its 60V breakdown voltage, 3.5Ω typical on-resistance at 10V drive, 300mW power dissipation limit, SOT23 thermal resistance of 417°C/W, and suitability for low-current load switching where gate drive simplicity and board space are critical.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage range of 1.0–3.0V, allowing direct interface with 3.3V and 5V logic without level shifting. Its low C_iss (22–50pF) and Crss (2.0–5.0pF) support high-frequency switching up to several MHz in DC-DC and LED driver topologies.

The device is characterized for operation from –55°C to +150°C junction temperature, with normalized R_DS(ON) increasing by ~1.5× at 125°C versus 25°C. Its 300mW power rating assumes FR-4 PCB mounting per Diodes' recommended 1.0 × 0.75 inch pad layout.

Key Specifications

Pinout & Package

Package: SOT23 - Surface-mount plastic case, 0.008g weight, UL 94V-0 rated, moisture sensitivity level 1, matte tin-plated alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with DMN2004LK-7 and 2N7002K-7-F, the BS870-7 offers tighter V_GS(TH) distribution (1.0–3.0V vs. 1.0–2.5V) and lower Crss (2.0–5.0pF), improving noise immunity in mixed-signal environments while maintaining compatibility with legacy 2N7002 footprints.

Availability

BS870-7 is available at Aetrix Electronics and suitable for motor control, power management functions, backlighting, and logic-level gate drive switching requiring stable component supply across industrial, consumer, and automotive-adjacent programs.

Supply support for BS870-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BS870 belongs to Diodes' general-purpose logic-level MOSFET product line, engineered for space-constrained, low-power switching applications where gate drive simplicity, thermal reliability, and JEDEC-compliant robustness are prioritized over ultra-high current capability.

FAQ

Is BS870-7 suitable for automotive applications?

No - BS870-7 is qualified to JEDEC standards for high reliability but is not AEC-Q101 certified. For automotive use, Diodes specifies the BS870Q variant, which undergoes additional stress testing, PPAP documentation, and is manufactured in IATF 16949-certified facilities. BS870-7 may be used in non-safety-critical automotive subsystems only after full qualification by the end customer.

What is the maximum safe operating temperature for BS870-7?

The BS870-7 has a specified junction temperature range of –55°C to +150°C. Under continuous DC operation at 250mA and 10V V_GS, junction temperature rise is governed by R_θJA = 417°C/W. With 300mW power dissipation, ΔT = 125°C - meaning ambient must remain ≤25°C for T_J ≤ 150°C. Derating curves in Figure 5 confirm usable ambient up to ~70°C at reduced current.

Can BS870-7 replace a 2N7002 in existing designs?

Yes - BS870-7 shares the SOT23 package, pinout (G-S-D), and 60V V_DSS rating with 2N7002. Its lower V_GS(TH) max (3.0V vs. 2.5V) and comparable R_DS(ON) (3.5Ω vs. 3.0Ω typ) allow drop-in use in most 2N7002 applications, though designers should verify gate drive margin and thermal performance given its slightly higher R_DS(ON) at 4.5V.

Does BS870-7 require a gate resistor for stability?

A gate resistor (typically 10–100Ω) is recommended to dampen ringing caused by trace inductance interacting with C_iss and Crss. While not mandatory for basic on/off operation, it improves EMI performance and prevents false turn-on due to dv/dt coupling - especially critical in motor control and PWM backlighting where fast edge rates exceed 10V/ns.