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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC014N04LSTATMA1

Name: BSC014N04LSTATMA1
Brand: Infineon Technologies
SKU: BSC014N04LSTATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC014N04LSTATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC014N04LSTATMA1.pdf

Description:: MOSFET N-CH 40V 33A/100A TDSON

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Product details

Overview

BSC014N04LSTATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET optimized for synchronous rectification in high-efficiency DC-DC converters, featuring 40 V V_DS, 1.4 mΩ R_DS(on) (max @ V_GS=10 V), 205 A continuous drain current (T_C=25 °C), 175 °C rated junction temperature, and TDSON-8 FL package with enlarged source interconnection.

For engineers reviewing the BSC014N04LSTATMA1 datasheet, BSC014N04LSTATMA1 pinout, BSC014N04LSTATMA1 application, or BSC014N04LSTATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 100% avalanche tested ruggedness, superior thermal resistance (R_thJC = 0.8 K/W), and JEDEC-qualified reliability for industrial and server power supplies.

Technical Context

This OptiMOSTM device employs trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance-Q_g = 61 nC (0–10 V), Q_gd = 9.8–14 nC, and t_f = 7 ns-enabling high-frequency operation in synchronous buck converters and OR-ing circuits.

Its integrated body diode exhibits low V_SD = 0.82 V (typ @ I_F = 50 A, T_j = 25 °C) and fast reverse recovery (t_rr = 32–64 ns), supporting efficient zero-voltage switching (ZVS) and minimizing commutation losses in multiphase VRMs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/48 V intermediate bus architectures
R_DS(on) max	1.4 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 200 A in high-current CPU/GPU VRMs
I_D cont.	205 A @ T_C = 25 °C - Supports >300 W per phase in compact, air-cooled server power stages
Q_g	61 nC @ 0–10 V - Balances gate drive loss and switching speed for 500 kHz–1 MHz operation
R_thJC	0.8 K/W typ - Delivers high thermal efficiency via bottom-side cooling in thermally enhanced PCB layouts
T_j max	175 °C - Allows sustained operation under transient overload conditions in industrial environments
Q_oss	54 nC - Reduces turn-off energy and improves light-load efficiency in resonant topologies

Pinout & Package

Package: TDSON-8 FL (Thin Dual Small Outline No-lead, Flat Lead), 5.15 mm × 6.15 mm footprint, exposed drain pad on bottom for thermal conduction and enlarged source interconnection to reduce parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
D (Pins 1–5)	Drain	Common drain connection across 5 pins; electrically tied to exposed thermal pad for low-inductance, high-current path
S (Pins 6–8)	Source	Three-source-pin configuration with enlarged copper area minimizes source inductance for stable synchronous FET control
G (Pin 4)	Gate	Single gate input with 0.9 Ω typical gate resistance-optimized for direct drive from standard PWM controllers without external gate resistor

Key Features

Feature	Design Value
Optimized for synchronous rectification	Low Q_g/Q_gd ratio and fast t_f enable precise timing control and reduced shoot-through risk in high-side/low-side configurations
100% avalanche tested	Rated for single-pulse I_AS = 50 A and E_AS = 170 mJ-ensures robustness against inductive switching transients in unregulated loads
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables full enhancement with 3.3 V or 5 V controllers, eliminating need for level shifters
JEDEC-qualified reliability	Complies with J-STD-020 (reflow) and JESD22-A108 (temperature cycling)-validated for automotive-grade production use
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU-supports green manufacturing and end-of-life compliance

Applications

Server VRM Phase Legs

Industrial DC-DC Converters

Use Scenario: High-current, multi-phase buck converters supplying CPUs and ASICs in cloud data centers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET operating at 500 kHz–1 MHz with tight dead-time control.

Use Value: 1.4 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 2.5 mΩ devices, enabling >95% efficiency at 200 A output.

Use Scenario: 48 V-to-12 V isolated DC-DC modules in factory automation PLCs and motor drives.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward or LLC secondary-side rectification.

Use Value: 175 °C rating and 100% avalanche test ensure reliable operation during line surges and short-circuit events in harsh industrial environments.

OR-ing Controllers

Telecom Rectifier Modules

Use Scenario: Redundant 48 V power feeds in telecom base stations and edge computing nodes.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET for hot-swap and reverse-current blocking.

Use Value: Ultra-low R_DS(on) minimizes voltage drop (<30 mV @ 100 A), preserving system voltage margin and reducing heat sink size.

Use Scenario: High-density 48 V rectifier modules delivering >1 kW in centralized telecom power systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in full-bridge or center-tapped transformer designs.

Use Value: Enlarged source interconnection lowers layout-induced ringing, improving EMI performance and enabling smaller input filter components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB017N04LGATMA1	R_DS(on) = 1.7 mΩ (max), Q_g = 52 nC, same TDSON-8 FL package	Slightly higher conduction loss but lower gate charge-better for very high-frequency (>1 MHz) soft-switching designs	Select when prioritizing gate drive efficiency over absolute lowest R_DS(on) in resonant topologies
STL220N4F7AG	R_DS(on) = 1.35 mΩ (max), Q_g = 72 nC, PowerFLAT 5×6 package with different pinout	Lower R_DS(on) but higher Q_g and non-drop-in footprint-requires PCB redesign and gate driver re-evaluation	Choose only if board revision allows package change and thermal design accommodates higher switching loss

Compared with IPB017N04LGATMA1 and STL220N4F7AG, BSC014N04LSTATMA1 delivers the best balance of ultra-low R_DS(on) and moderate Q_g, making it optimal for high-current, medium-frequency VRMs where conduction loss dominates total power loss.

Availability

BSC014N04LSTATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-volume production.

Supply support for BSC014N04LSTATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication infrastructure.

This part belongs to the OptiMOSTM 40 V logic-level Power-MOSFET product line, engineered specifically for high-efficiency synchronous rectification in next-generation server, telecom, and industrial power supplies.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The BSC014N04LSTATMA1 supports 145 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the datasheet. This derating reflects thermal limits under real-world heatsink conditions and must be verified against actual PCB thermal design using R_thJC = 0.8 K/W.

Is this MOSFET suitable for 3.3 V gate drive applications?

Yes-its logic-level V_GS(th) range of 1.2–2.0 V ensures full enhancement at 3.3 V gate drive, and R_DS(on) remains low at 1.9 mΩ (max) with V_GS = 4.5 V. However, conduction loss increases ~35% versus 10 V drive, so thermal validation is required at full load.

Does the TDSON-8 FL package require solder paste stencil adjustments?

Yes-the enlarged source interconnection and exposed drain pad demand a custom stencil aperture design: 80–90% area ratio for the thermal pad and separate, optimized openings for source/drain terminals to ensure void-free solder joints and mechanical reliability per IPC-7095 guidelines.

How does its body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.82 V (typ) and t_rr = 32–64 ns-higher forward drop than Schottky diodes but eliminates external component count and layout complexity. It is optimized for synchronous operation, not freewheeling, and should not be used as a standalone rectifier.

BSC014N04LSTATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6020 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 115W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8 FL

BSC014N04LSTATMA1 FAQ

1.How can I place an order for BSC014N04LSTATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC014N04LSTATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC014N04LSTATMA1 reliable?

The price and inventory of BSC014N04LSTATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC014N04LSTATMA1 is usually 5 days.

3.What payment methods are accepted for BSC014N04LSTATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC014N04LSTATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC014N04LSTATMA1?

BSC014N04LSTATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC014N04LSTATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC014N04LSTATMA1?

For technical support, including BSC014N04LSTATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC014N04LSTATMA1 requirements.

6.How does Aetrix verify that BSC014N04LSTATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC014N04LSTATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC014N04LSTATMA1 meets industry standards.

7.What is the process for return or replacement of BSC014N04LSTATMA1?

All BSC014N04LSTATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC014N04LSTATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC014N04LSTATMA1 part is unused and in its original packaging.

Return procedure for BSC014N04LSTATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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