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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC020N03LSGATMA1

Name: BSC020N03LSGATMA1
Brand: Infineon Technologies
SKU: BSC020N03LSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC020N03LSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC020N03LSGATMA1.pdf

Description:: MOSFET N-CH 30V 28A/100A TDSON

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Product details

Overview

BSC020N03LSGATMA1 from Infineon Technologies is an N-channel logic-level Power-MOSFET in the OptiMOS™ 3 family, rated for 30 V drain-source voltage and delivering 2 mΩ typical R_DS(on) at V_GS = 10 V. It supports continuous drain current up to 176 A at T_C = 25 °C and is optimized for high-efficiency DC/DC converters and synchronous rectification in server VRMs and telecom power supplies.

For engineers reviewing the BSC020N03LSGATMA1 datasheet, BSC020N03LSGATMA1 pinout, BSC020N03LSGATMA1 application, or BSC020N03LSGATMA1 equivalent, key selection criteria include its ultra-low gate charge × R_DS(on) figure of merit, avalanche rating, JEDEC-qualified reliability, and SuperSO8 package thermal performance.

Technical Context

This MOSFET employs trench-based silicon technology with optimized cell pitch and reduced parasitic capacitances to achieve fast switching (t_d(on) = 11 ns, t_d(off) = 42 ns) and low conduction loss. Its gate threshold voltage (1–2.2 V) ensures robust logic-level drive compatibility with standard 3.3 V and 5 V controllers.

The device integrates a co-packaged body diode with Q_rr = 25 nC and V_SD = 0.8–1.1 V at I_F = 30 A, enabling efficient synchronous FET operation in buck converters and OR-ing circuits without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V input rail applications
R_DS(on), max	2.3 mΩ at V_GS = 4.5 V - Enables <1 W conduction loss at 30 A in compact VRMs
I_D, cont	176 A at T_C = 25 °C - Supports high-current CPU/GPU power stages with minimal parallel devices
Q_g	45 nC at V_GS = 0–10 V - Low gate drive power requirement for high-frequency (>1 MHz) operation
R_thJC	1.3 K/W - Enables direct heatsink mounting for >90 W power dissipation in SuperSO8 footprint
E_AS	180 mJ - Withstands single-pulse inductive energy in hard-switched topologies
V_GS(th)	1–2.2 V - Ensures turn-on with standard logic-level PWM controllers (e.g., TI UCCx series)

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), 5.15 mm × 6.2 mm × 1.27 mm, exposed drain pad on bottom side for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, S	Source	Common source node; pins 1–3 and pin S (pin 8) are internally connected to source metallization
4, G	Gate	Control terminal; low input capacitance (C_iss = 7200 pF) enables stable gate drive with 1.6 Ω resistor
5, 6, 7, D	Drain	Main power path; pins 5–7 and bottom thermal pad form low-inductance, high-current drain connection
8, S	Source	Secondary source terminal; electrically identical to pins 1–3, used for Kelvin sensing or layout symmetry

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for gate boosters in 5 V control systems
Optimized FOM (Q_g × R_DS(on))	90 nC·mΩ - Reduces combined switching + conduction loss in high-frequency SMPS
Avalanche-rated	Rated for repetitive unclamped inductive switching (UIS) with E_AS = 180 mJ - improves system robustness without snubbers
SuperSO8 thermal design	1.3 K/W junction-to-case (bottom) - allows >96 W continuous power dissipation with proper heatsinking
RoHS & halogen-free	Pb-free plating and compliant with IEC61249-2-21 - meets global environmental compliance requirements

Applications

Server VRM High-Side Switch

Telecom DC/DC Primary Switch

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous MOSFET switching at 500 kHz–1 MHz with precise dead-time control.

Use Value: 2.3 mΩ R_DS(on) and 45 nC Q_g reduce total power loss by ~18% vs. legacy 3.5 mΩ alternatives at 150 A load.

Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power modules.

IC Role / Device Role / Timing Role: Primary-side switching element in hard-switched forward or active-clamp topology.

Use Value: Avalanche rating and 180 mJ E_AS eliminate need for external clamping circuits under transient overloads.

OR-ing Controller FET

Industrial Motor Drive Half-Bridge

Use Scenario: Redundant 12 V power supply backplane with automatic failover using ideal diode control.

IC Role / Device Role / Timing Role: Low-V_DS synchronous rectifier replacing Schottky diode in bidirectional OR-ing path.

Use Value: Body diode V_SD = 0.8 V and Q_rr = 25 nC minimize reverse recovery loss and thermal stress during switchover.

Use Scenario: 24 V BLDC motor inverter stage for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration driving 10–20 A phase current.

Use Value: 176 A I_D rating and 1.3 K/W R_thJC support burst-mode operation with peak currents >100 A without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level Power-MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.2 mΩ @ 4.5 V; Q_g = 24 nC; SO-8 package	Lower current rating (100 A) and higher R_DS(on) limit use to ≤60 A loads	Preferred where board space is constrained and thermal budget allows higher conduction loss
DMTH3016LPS-13	R_DS(on) = 1.6 mΩ @ 4.5 V; Q_g = 52 nC; PowerDI5060 package	Higher gate charge increases driver loss; no avalanche rating specified	Selected when lowest possible R_DS(on) dominates over switching loss and ruggedness requirements

Compared with IRLHS6342TRPBF and DMTH3016LPS-13, BSC020N03LSGATMA1 uniquely balances ultra-low R_DS(on), moderate Q_g, full avalanche capability, and JEDEC qualification-making it optimal for mission-critical 12–24 V industrial and telecom power stages.

Availability

BSC020N03LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BSC020N03LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with over 30 years of MOSFET innovation.

This part belongs to the OptiMOS™ 3 generation-designed specifically for high-efficiency, high-density DC/DC conversion in datacenter, telecom, and industrial power systems where thermal performance and switching speed are critical.

FAQ

What is the maximum recommended gate drive voltage for BSC020N03LSGATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for operation at V_GS = 4.5 V (logic level) and 10 V (standard enhancement). Driving above 12 V provides negligible R_DS(on) improvement while increasing gate oxide stress and ESD risk; 10 V is the recommended maximum for reliable long-term operation.

Can BSC020N03LSGATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables inherently stable current sharing. Layout must ensure matched gate drive paths and symmetrical drain/source routing; thermal coupling via shared heatsink further improves balance. Derating to 80% of total rated current per device is advised for >3-device parallel arrays.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has V_SD = 0.8–1.1 V at 30 A and Q_rr = 25 nC, making it viable for synchronous rectification in buck converters up to 1 MHz. However, for highest efficiency, external Schottky or GaN FETs may be preferred in ultra-low-voltage (<1 V) outputs due to lower forward drop.

Does BSC020N03LSGATMA1 require a gate resistor for stability?

A gate resistor (typically 1.6 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance interaction. The datasheet specifies switching times (t_d(on), t_r, etc.) with R_G = 1.6 Ω; omitting it risks shoot-through in half-bridge configurations and excessive dv/dt-induced false triggering.

BSC020N03LSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC020N03LSGATMA1 FAQ

1.How can I place an order for BSC020N03LSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC020N03LSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC020N03LSGATMA1 reliable?

The price and inventory of BSC020N03LSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC020N03LSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC020N03LSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC020N03LSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC020N03LSGATMA1?

BSC020N03LSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC020N03LSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC020N03LSGATMA1?

For technical support, including BSC020N03LSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC020N03LSGATMA1 requirements.

6.How does Aetrix verify that BSC020N03LSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC020N03LSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC020N03LSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC020N03LSGATMA1?

All BSC020N03LSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC020N03LSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC020N03LSGATMA1 part is unused and in its original packaging.

Return procedure for BSC020N03LSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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