Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC020N03MSGATMA1

Name: BSC020N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC020N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: BSC020N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC020N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 25A/100A TDSON

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:31,901

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

BSC020N03MSGATMA1 from Infineon Technologies is an N-channel enhancement-mode Power-MOSFET in the OptiMOS™3 M-Series, rated for 30 V drain-source voltage, with R_DS(on) of 2.0 mΩ at V_GS = 10 V and 2.5 mΩ at V_GS = 4.5 V, supporting continuous drain current up to 176 A at T_C = 25 °C. It is optimized for high-frequency synchronous buck converters in notebook CPU/GPU VRMs and point-of-load (POL) applications.

For engineers reviewing the BSC020N03MSGATMA1 datasheet, BSC020N03MSGATMA1 pinout, BSC020N03MSGATMA1 application, or BSC020N03MSGATMA1 equivalent, key selection criteria include low gate charge × R_DS(on) figure-of-merit (FOM), 100% avalanche-tested ruggedness, JEDEC-qualified thermal performance, and SuperSO8 package compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve ultra-low on-resistance and fast switching dynamics. Its gate threshold voltage (1–2 V) enables reliable turn-on with 4.5 V logic-level drivers, and its Q_g = 45–60 nC (V_GS = 0–4.5 V) supports efficient high-frequency operation in SMPS topologies.

The device integrates a robust body diode with Q_rr = 20 nC and V_SD = 0.81–1.1 V (I_F = 30 A), enabling synchronous rectification without external Schottky diodes. Thermal resistance R_thJC = 1.3 K/W (bottom-side conduction) ensures effective heat transfer to heatsinks or copper planes in compact VRM designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in POL converters.
R_DS(on) @ V_GS = 4.5 V	2.5 mΩ max - Enables <10 mW conduction loss at 20 A, critical for >95% efficiency in high-current CPU core supplies.
I_D continuous @ T_C = 25 °C	176 A - Supports multi-phase VRM designs delivering >300 W per phase without parallel devices.
Q_g @ 0–4.5 V	45–60 nC - Low gate drive energy reduces driver IC power dissipation and enables 1–2 MHz switching in compact form factors.
R_thJC	1.3 K/W - Allows direct thermal coupling to PCB copper or heatsink, limiting junction rise to <20 K under 100 W power dissipation.
Q_rr	20 nC - Minimizes reverse recovery losses during hard-switched synchronous rectification, reducing EMI and body diode heating.
V_GS(th)	1–2 V - Ensures full enhancement with standard 3.3 V/5 V gate drivers while maintaining noise immunity against false turn-on.

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), thermally enhanced 5 mm × 6 mm surface-mount package with exposed drain pad on bottom side for optimal heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, S	Source	Common source node for all internal dies; connected to PCB ground plane via multiple pins for low-inductance return path.
4, G	Gate	Single gate input; low gate resistance (0.9–3.3 Ω) minimizes ringing and enables stable 4.5 V drive without external gate resistor.
5, 6, 7, 8, D	Drain	Parallel-connected drain terminals tied to exposed thermal pad; forms primary high-current power path and thermal interface to PCB.

Key Features

Feature	Design Value
Optimized for 4.5 V gate drive	Guarantees R_DS(on) ≤ 2.5 mΩ at logic-level voltages, eliminating need for level-shifters in modern controller ICs.
Low Q_g × R_DS(on) FOM	~112.5–150 mΩ·nC - Delivers superior high-frequency efficiency vs. legacy MOSFETs in 500 kHz–2 MHz VRMs.
100% Unclamped Inductive Switching (UIS) tested	Rated for single-pulse avalanche energy E_AS = 200 mJ - Ensures robustness against load dump and inductive kickback in POL stages.
JEDEC J-STD-20/JESD22 qualified	Validated for reflow soldering and temperature cycling per industrial reliability standards - suitable for automotive-grade assembly processes.
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 halogen limits and EU RoHS Directive 2011/65/EU - compliant for global OEM production and green initiatives.

Applications

Notebook CPU Voltage Regulator

GPU Core Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying Intel/AMD mobile processors with dynamic load steps up to 200 A/µs.

IC Role / Device Role: High-side synchronous MOSFET in 1–2 MHz VRM phase leg, handling peak currents ≥120 A per phase.

Use Value: Ultra-low R_DS(on) and Q_g reduce conduction + switching losses by >18% vs. prior-gen 30 V MOSFETs, extending battery runtime.

Use Scenario: Compact dual-phase VRM powering discrete graphics cards in thin-and-light gaming laptops.

IC Role / Device Role: Low-side synchronous rectifier with integrated body diode, operating in continuous conduction mode (CCM).

Use Value: Q_rr = 20 nC and V_SD = 0.81 V minimize reverse recovery loss and forward drop, improving full-load efficiency by 0.7–1.2%.

Server Point-of-Load Converter

Industrial FPGA Core Supply

Use Scenario: 48 V-to-0.8 V intermediate bus architecture feeding ASIC/FPGA cores with tight regulation (<±10 mV).

IC Role / Device Role: Primary switch in interleaved 4-phase buck converter delivering up to 400 A total output current.

Use Value: R_thJC = 1.3 K/W enables direct mounting to copper heatsink, maintaining T_j < 105 °C at full load without forced air.

Use Scenario: Programmable logic supply requiring fast transient response and zero-downtime operation in factory automation PLCs.

IC Role / Device Role: High-reliability power switch in redundant 12 V-to-1.2 V VRM with fault-tolerant control loop.

Use Value: 100% UIS testing and JEDEC qualification ensure sustained operation under repeated short-circuit events and thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 30 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6242PBF	R_DS(on) = 2.3 mΩ @ 4.5 V; Q_g = 52 nC; same SuperSO8 package but higher gate resistance (4.5 Ω typ).	Slightly lower conduction loss but slower switching due to higher Q_g/R_G; less suitable above 1.2 MHz.	Prefer when gate drive strength is limited and efficiency priority is mid-frequency (300–800 kHz) operation.
SI7850DP-T1-GE3	R_DS(on) = 2.7 mΩ @ 4.5 V; Q_g = 41 nC; smaller 3.3 mm × 3.3 mm PowerPAK SO-8 package with higher R_thJA.	Lower gate charge improves switching efficiency but reduced thermal mass limits continuous current to 120 A at T_C = 25 °C.	Choose for space-constrained designs where board area is critical and thermal budget allows derating.

Compared with IRLHS6242PBF and SI7850DP-T1-GE3, BSC020N03MSGATMA1 delivers the lowest combined conduction–switching loss across 1–2 MHz VRMs, supported by best-in-class R_thJC and avalanche ruggedness-making it optimal for high-power-density notebook and server POL systems.

Availability

BSC020N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook CPU voltage regulators, GPU core power delivery, and server point-of-load converters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for BSC020N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power MOSFETs and GaN solutions.

BSC020N03MSGATMA1 belongs to the OptiMOS™3 M-Series, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and thermal reliability are critical.

FAQ

What is the maximum safe operating frequency for BSC020N03MSGATMA1 in a synchronous buck converter?

The device supports stable operation up to 2 MHz, validated by its 27 ns turn-on delay, 14 ns rise time, and 45–60 nC gate charge at 4.5 V drive. At 2 MHz, total switching loss remains below 1.2 W under 30 A load with optimized gate drive impedance and PCB layout.

Can BSC020N03MSGATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increases with junction temperature) ensures inherent current sharing. Parallel operation is documented in Infineon's AN2015-05, with recommended layout practices including matched gate trace lengths and symmetric source/drain routing.

Is the body diode suitable for synchronous rectification without external diode replacement?

Yes-the integrated body diode has Q_rr = 20 nC and V_SD = 0.81 V at 30 A, enabling efficient synchronous rectification in CCM and DCM modes. No external Schottky diode is required, reducing BOM count and PCB footprint.

Does BSC020N03MSGATMA1 require special PCB layout considerations for thermal performance?

Yes-thermal performance depends critically on soldering the exposed drain pad to ≥6 cm² of 70 µm copper on inner or outer layers. Via stitching to internal ground planes and minimizing thermal via impedance are essential to achieve the specified R_thJC = 1.3 K/W.

BSC020N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 124 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9600 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 96W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-1

BSC020N03MSGATMA1 FAQ

1.How can I place an order for BSC020N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC020N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC020N03MSGATMA1 reliable?

The price and inventory of BSC020N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC020N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC020N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC020N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC020N03MSGATMA1?

BSC020N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC020N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC020N03MSGATMA1?

For technical support, including BSC020N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC020N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC020N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC020N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC020N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC020N03MSGATMA1?

All BSC020N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC020N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC020N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC020N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…