Infineon Technologies BSC026NE2LS5ATMA1

Overview

BSC026NE2LS5ATMA1 from Infineon Technologies is an N-channel OptiMOSTM5 Power-MOSFET rated for 25 V drain-source voltage, with a maximum R_DS(on) of 2.6 mΩ at V_GS = 4.5 V, 82 A continuous drain current (T_C = 25 °C), 100% avalanche tested, and housed in a SuperSO8 (PG-TDSON-8) package. It is optimized for high-efficiency synchronous buck converters in server VRMs and POL DC-DC modules.

For engineers reviewing the BSC026NE2LS5ATMA1 datasheet, BSC026NE2LS5ATMA1 pinout, BSC026NE2LS5ATMA1 application, or BSC026NE2LS5ATMA1 equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, Q_g = 5.6 nC (0–4.5 V), Q_oss = 7.6 nC, thermal resistance R_thJC = 4.3 K/W, and JEDEC-qualified reliability for industrial power stages.

Technical Context

This MOSFET employs trench-based silicon technology with optimized cell pitch and gate oxide design to achieve ultra-low conduction loss while maintaining fast switching performance. Its gate charge profile supports efficient operation in high-frequency synchronous rectification, with Q_gd = 1.4 nC and V_plateau = 2.6 V enabling precise timing control in adaptive gate drivers.

The device integrates a robust body diode with Q_rr = 7 nC and V_SD = 0.84 V (I_F = 30 A, T_j = 25 °C), making it suitable for hard-switched topologies where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), thermally enhanced surface-mount package with exposed drain pad on bottom side for low-inductance, high-current routing and direct thermal coupling to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLHS6242PBF and DMTH2006LPSQ-13, BSC026NE2LS5ATMA1 delivers optimal balance of low R_DS(on), low Q_g, and proven avalanche ruggedness-making it preferred for space-constrained, high-reliability buck regulators where thermal headroom and transient immunity are critical.

Availability

BSC026NE2LS5ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive ADAS power supplies requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for BSC026NE2LS5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM5 family-designed specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on) at logic-level gate drive and robust thermal performance are mandatory.

FAQ

Is BSC026NE2LS5ATMA1 suitable for 3.3 V gate drive?

Yes. With a gate threshold voltage V_GS(th) of 1.2–2.0 V and guaranteed R_DS(on) ≤ 3.0 mΩ at V_GS = 4.5 V, it fully enhances using 3.3 V logic with sufficient margin. However, conduction loss increases ~15% versus 4.5 V drive due to higher R_DS(on) at lower V_GS.

What is the maximum PCB copper area required for full 82 A rating?

To sustain 82 A continuous current, the datasheet specifies a 6 cm² copper area (single layer, 70 µm thick) connected to the exposed drain pad on a vertical FR4 PCB in still air. Reducing copper area requires derating per Figure 2 in the datasheet.

Does this MOSFET have integrated ESD protection on the gate?

No. The device does not include on-chip gate ESD protection diodes. External gate resistors (≥10 Ω) and TVS clamping are recommended in systems exposed to handling or system-level ESD per IEC 61000-4-2.

Can BSC026NE2LS5ATMA1 be used in paralleled configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 9) ensures inherent current sharing. For stable parallel operation, match gate loop inductance and use individual gate resistors (≤2 Ω) to suppress oscillation; layout symmetry is critical for thermal balance.