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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC032NE2LSATMA1

Name: BSC032NE2LSATMA1
Brand: Infineon Technologies
SKU: BSC032NE2LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC032NE2LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC032NE2LSATMA1.pdf

Description:: MOSFET N-CH 25V 22A/84A TDSON

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Product details

Overview

BSC032NE2LSATMA1 from Infineon Technologies is an N-channel OptiMOS™ Power-MOSFET rated for 25 V drain-source voltage, with a maximum R_DS(on) of 3.2 mΩ at V_GS = 4.5 V, 84 A continuous drain current (T_C = 25 °C), and 100% avalanche tested. It is optimized for high-efficiency synchronous buck converters in server VRMs and POL DC-DC modules.

For engineers reviewing the BSC032NE2LSATMA1 datasheet, BSC032NE2LSATMA1 pinout, BSC032NE2LSATMA1 application, or BSC032NE2LSATMA1 equivalent, key selection criteria include low gate charge (Q_G = 16 nC @ 0–10 V), ultra-low R_DS(on), thermal resistance (R_thJC = 3.4 K/W), and SuperSO8 package compatibility with high-current PCB layouts.

Technical Context

This MOSFET employs Infineon's 2nd-generation OptiMOS™ trench technology to achieve enhanced conduction efficiency and fast switching performance. Its gate threshold voltage (V_GS(th) = 1.2–2.0 V) enables robust 4.5 V logic-level drive, while low Q_gd (1.9–2.9 nC) and Q_oss (9.4–13 nC) minimize switching losses in hard-switched topologies.

The device integrates a co-packaged body diode with low forward voltage (V_SD = 0.87 V typ. @ 30 A, T_j = 25 °C) and controlled reverse recovery (Q_rr = 10 nC), supporting synchronous rectification and freewheeling operation without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage for 12 V input bus applications with margin
R_DS(on), max	3.2 mΩ @ V_GS = 4.5 V - Enables <1 W conduction loss at 50 A in compact VRM designs
I_D, cont	84 A @ T_C = 25 °C - Supports high-current single-phase POL stages without paralleling
Q_G	16 nC @ 0–10 V - Reduces gate driver power and allows use of low-cost 1-A drivers
R_thJC	3.4 K/W - Enables direct heatsink mounting for thermal management in dense power stages
Q_OSS	9.4 nC - Limits turn-off energy loss and improves light-load efficiency in buck converters
V_GS(th)	1.2–2.0 V - Ensures reliable turn-on with standard 3.3 V/5 V PWM controllers

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), surface-mount, exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain (D)	All pins 1–7 and pin 8 are internally connected to the drain; used for high-current output path and thermal conduction to PCB copper
1, 2, 3 (Source)	Source (S)	Pins 1–3 serve as source terminals, reducing bond-wire inductance and improving current sharing in parallel configurations
4 (Gate)	Gate (G)	Single gate input with low gate resistance (R_G = 0.5–1.8 Ω) for stable, low-noise switching

Key Features

Feature	Design Value
Optimized Buck Converter Performance	Low Q_g/R_DS(on) ratio (5.0 nC/mΩ) minimizes total power loss across load range
100% Avalanche Tested	Guarantees ruggedness against inductive switching stress without derating
Superior Thermal Resistance	R_thJC = 3.4 K/W enables >30 W dissipation with minimal junction-to-case temperature rise
JEDEC Qualified	Complies with J-STD-20 and JESD22 for reflow and reliability in industrial and computing applications
Halogen-Free & RoHS	Meets IEC61249-2-21 and EU RoHS Directive for environmentally compliant manufacturing

Applications

Server Voltage Regulator Modules

AI Accelerator Board POL Supplies

Use Scenario: High-current, multi-phase VRMs delivering 50–100 A per phase to CPUs/GPUs in data center servers.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology, operating at 300–1000 kHz with precise duty-cycle control.

Use Value: 3.2 mΩ R_DS(on) reduces conduction loss by >40% vs. legacy 5 mΩ MOSFETs, enabling higher efficiency at full load.

Use Scenario: Point-of-load regulation for FPGA and AI ASICs requiring fast transient response and tight voltage tolerance.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in dual-MOSFET buck stage, leveraging low Q_oss and fast body diode recovery.

Use Value: Q_rr = 10 nC and V_SD = 0.87 V minimize reverse recovery loss and improve light-load efficiency by ~2.5%.

Industrial Motor Drive Gate Drivers

Telecom DC-DC Converters

Use Scenario: Half-bridge high-side switches in BLDC motor gate driver IC auxiliary supplies (12 V → 5 V/3.3 V).

IC Role / Device Role / Timing Role: Input-stage buck converter switch handling repetitive 10–50 A pulsed loads with high reliability requirements.

Use Value: 100% avalanche rating ensures survival during motor stall or short-circuit events without external protection.

Use Scenario: Intermediate bus conversion (48 V → 12 V) in telecom base station power systems with strict thermal constraints.

IC Role / Device Role / Timing Role: Primary switch in isolated or non-isolated buck-derived topologies operating at elevated ambient temperatures.

Use Value: R_thJC = 3.4 K/W allows direct thermal interface to chassis, maintaining T_j < 125 °C at 60 W dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 3.3 mΩ @ 4.5 V; Q_G = 14.5 nC; R_thJC = 4.0 K/W; same SuperSO8 footprint	Slightly higher conduction loss and thermal resistance; lower gate charge improves switching speed margin	Preferred where gate drive strength is limited but thermal margin is available
DMTH3007LPSQ-13	R_DS(on) = 3.0 mΩ @ 4.5 V; Q_G = 18.5 nC; R_thJC = 3.6 K/W; AEC-Q101 qualified	Lower R_DS(on) but higher Q_G; automotive qualification adds cost and test overhead	Selected only when automotive-grade reliability and documentation are mandatory

Compared with IRLHS6342TRPBF and DMTH3007LPSQ-13, BSC032NE2LSATMA1 delivers the best balance of low R_DS(on), moderate Q_G, and industry-standard thermal performance-making it optimal for high-volume server and AI infrastructure power stages where cost, efficiency, and manufacturability are jointly prioritized.

Availability

BSC032NE2LSATMA1 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator board POL supplies, and telecom DC-DC converters requiring stable component supply, JEDEC-compliant reliability, and high-current thermal performance.

Supply support for BSC032NE2LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification.

This part belongs to the OptiMOS™ 25 V product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure where low R_DS(on) and fast switching are critical.

FAQ

Is BSC032NE2LSATMA1 suitable for 3.3 V gate drive?

No. The gate threshold voltage (V_GS(th)) ranges from 1.2 V to 2.0 V, but full enhancement requires ≥4.5 V for specified R_DS(on). At 3.3 V, R_DS(on) rises significantly (>8 mΩ), increasing conduction loss beyond design limits. It is not rated for 3.3 V logic-level operation.

What is the maximum allowable junction temperature during continuous operation?

The absolute maximum junction temperature is 150 °C per JEDEC specification. For reliable long-term operation, Infineon recommends limiting T_j to ≤135 °C under worst-case conditions (e.g., 84 A, 100% duty cycle, ambient 70 °C), using the R_thJC = 3.4 K/W value and proper PCB copper area.

Does this MOSFET include an integrated ESD protection diode on the gate?

Yes. The device incorporates gate oxide protection circuitry meeting HBM ESD rating of ≥2 kV (per JEDEC JESD22-A114), verified during qualification. This protects against typical handling and assembly electrostatic discharge, though external gate resistors and layout care remain essential.

Can BSC032NE2LSATMA1 be used in parallel configurations?

Yes. Its positive temperature coefficient for R_DS(on) (increases with T_j) enables inherent current sharing. Layout must ensure matched gate loop inductance and symmetrical drain/source copper paths; recommended practice uses separate gate resistors (≤1 Ω) and Kelvin source connections for each device.

BSC032NE2LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 84A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 12 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-6

BSC032NE2LSATMA1 FAQ

1.How can I place an order for BSC032NE2LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC032NE2LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC032NE2LSATMA1 reliable?

The price and inventory of BSC032NE2LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC032NE2LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSC032NE2LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC032NE2LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC032NE2LSATMA1?

BSC032NE2LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC032NE2LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC032NE2LSATMA1?

For technical support, including BSC032NE2LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC032NE2LSATMA1 requirements.

6.How does Aetrix verify that BSC032NE2LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC032NE2LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC032NE2LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSC032NE2LSATMA1?

All BSC032NE2LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC032NE2LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC032NE2LSATMA1 part is unused and in its original packaging.

Return procedure for BSC032NE2LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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