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Infineon Technologies BSC042N03MSGATMA1

Part No.:
BSC042N03MSGATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
8-PowerTDFN
Datasheet:
AetrixBSC042N03MSGATMA1.pdf
Description:
MOSFET N-CH 30V 17A/93A TDSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,699

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Product details

Overview

BSC042N03MSGATMA1 from Infineon Technologies is an N-channel OptiMOS™3 Power-MOSFET optimized for 5 V gate drive in notebook CPU VRMs, VGA power stages, and point-of-load (POL) converters. It delivers 4.2 mΩ RDS(on) at VGS = 10 V, 5.4 mΩ at 4.5 V, 93 A continuous drain current (TC = 25 °C), and 100% avalanche tested robustness for high-reliability DC-DC switching.

For engineers reviewing the BSC042N03MSGATMA1 datasheet, BSC042N03MSGATMA1 pinout, BSC042N03MSGATMA1 application, or BSC042N03MSGATMA1 equivalent, key selection criteria include its low gate charge × RDS(on) figure-of-merit (FOM), JEDEC-qualified thermal performance, and PG-TDSON-8 package suitability for high-density synchronous buck topologies.

Technical Context

This MOSFET employs a trench-based silicon process to achieve ultra-low on-resistance with fast switching dynamics. Its 3200 pF input capacitance (Ciss) and 940 pF output capacitance (Coss) support high-frequency operation up to 1 MHz in SMPS designs.

The device features a 2.2 K/W junction-to-case thermal resistance (RthJC) and is characterized for stable gate threshold voltage (1–2 V) across –55 to 150 °C, enabling reliable turn-on control in thermally constrained POL modules.

Key Specifications

ParameterValue and Actual Design Meaning
VDS Rating30 V - Supports 12 V input rails with margin for transient spikes in notebook and server POLs
RDS(on) @ 4.5 V5.4 mΩ max - Enables high-efficiency 5 V gate-driven synchronous rectification
ID Continuous @ TC=25°C82 A - Sustains high-current CPU core loads without external heatsinking
Qg Total27 nC max - Low gate drive power loss in 300–1000 kHz switching applications
RthJC2.2 K/W - Allows direct thermal coupling to PCB copper or heatsink for thermal management
EAS40 mJ - Withstands single-pulse inductive energy during hard-switching events
VGS(th)1–2 V - Ensures clean turn-on with standard logic-level drivers and avoids shoot-through risk

Pinout & Package

PG-TDSON-8 (Power-Flat-8) surface-mount package with exposed drain pad for thermal and electrical connection. Pin 1–8 arranged in dual-row gull-wing configuration; drain connected to bottom-side thermal pad.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain Pad)Drain (D)Primary current path and main thermal conduction path to PCB copper area
1, 2, 3, 4, 5, 6, 7, 8 (Top-side pins)Source (S) / Gate (G)Pins 1–3: Source; Pin 4: Gate; Pins 5–8: Source - Enables low-inductance source return and gate drive routing

Key Features

FeatureDesign Value
Optimized 4.5 V drive capabilityGuarantees full enhancement and low RDS(on) with standard 5 V microcontroller or PWM controller outputs
Low Qg × RDS(on) FOM27 nC × 5.4 mΩ = 146 nC·mΩ - Reduces total switching loss in high-frequency POL converters
100% unclamped inductive avalanche testedValidated to withstand 50 A single-pulse avalanche current and 40 mJ energy without degradation
JEDEC-qualified reliabilityComplies with J-STD-20 reflow and JESD22 mechanical stress standards for automotive-grade assembly processes
Halogen-free & RoHS-compliantMeets IEC61249-2-21 and EU RoHS Directive 2011/65/EU for environmentally regulated end equipment

Applications

Notebook CPU Voltage RegulatorVGA/GPU Power Stage

Use Scenario: High-current, multi-phase buck converter supplying dynamic CPU core voltage (0.6–1.5 V) under rapid load transients.

IC Role / Device Role / Timing Role: Synchronous high-side switch handling up to 82 A continuous current per phase with minimal conduction loss.

Use Value: 5.4 mΩ RDS(on) at 4.5 V enables >95% efficiency at 30 A load while maintaining tight voltage regulation.

Use Scenario: Dual-phase 12 V input to 1.0 V GPU core supply in discrete graphics cards with aggressive thermal constraints.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier operating in continuous conduction mode (CCM) with fast body diode recovery.

Use Value: 0.84 V typical VSD and 15 nC Qrr reduce reverse recovery loss and EMI generation during dead-time transitions.

Server Point-of-Load ConverterIndustrial FPGA Core Supply

Use Scenario: 48 V intermediate bus converted to 0.85 V FPGA core rail using interleaved buck topology with 500 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side MOSFET selected for low Qgd/Qgs ratio to minimize Miller-induced switching delay and improve duty-cycle fidelity.

Use Value: 4.5 nC Qgd and 9.2 nC Qgs enable precise gate timing control and reduced cross-conduction risk at high dV/dt.

Use Scenario: Compact 3.3 V to 1.2 V step-down module powering Xilinx or Intel FPGA I/O banks and transceivers in space-constrained industrial controllers.

IC Role / Device Role / Timing Role: Low-voltage, high-current switch integrated into thermally enhanced QFN module with internal thermal vias.

Use Value: 2.2 K/W RthJC allows direct thermal interface to module baseplate, sustaining 52 A pulsed current without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRLHS6242PBFRDS(on) = 4.8 mΩ @ 4.5 V; Qg = 22 nC; PG-TDSON-8 packageSlightly lower RDS(on) but higher Coss (1100 pF) - less optimal for >1 MHz operationPreferable where conduction loss dominates over switching loss in <500 kHz designs
DMTH3007LPSQ-13RDS(on) = 5.8 mΩ @ 4.5 V; Qg = 20 nC; 30 V rating; AEC-Q101 qualifiedAutomotive-qualified variant with tighter VGS(th) distribution (1.2–1.8 V) and extended temperature validationRequired for automotive infotainment or ADAS POL supplies requiring AEC-Q101 compliance

Compared with IRLHS6242PBF and DMTH3007LPSQ-13, BSC042N03MSGATMA1 offers the lowest Qg × RDS(on) FOM among the three, making it optimal for high-frequency, high-efficiency notebook and server POLs where both switching and conduction losses must be minimized simultaneously.

Availability

BSC042N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook CPU voltage regulators, VGA/GPU power stages, and server point-of-load converters requiring stable component supply and long-term production continuity.

Supply support for BSC042N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™3 product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where low RDS(on) and fast switching are critical.

FAQ

Is BSC042N03MSGATMA1 suitable for synchronous rectification in 4.5 V gate-drive applications?

Yes. Its guaranteed RDS(on) of 5.4 mΩ at VGS = 4.5 V and gate threshold voltage range of 1–2 V ensure full enhancement and low conduction loss when driven directly by standard 5 V logic or dedicated gate drivers. The device is explicitly optimized for 5 V driver applications including notebook VRMs and POL converters.

What is the maximum safe operating temperature for continuous operation?

The junction temperature must not exceed 150 °C. At TC = 100 °C, the device supports 52 A continuous drain current with VGS = 4.5 V. Derating curves in the datasheet show linear reduction from 82 A at 25 °C to zero at 150 °C ambient case temperature, assuming proper PCB thermal design with ≥6 cm² copper area.

Does this MOSFET include an integrated body diode, and how is it characterized?

Yes, it features a monolithic parasitic body diode with forward voltage VSD = 0.84–1.1 V at IF = 30 A and Tj = 25 °C. Reverse recovery charge Qrr is specified at 15 nC under 15 V reverse bias and 400 A/µs di/dt, confirming suitability for synchronous rectification with controlled dead-time management.

Can BSC042N03MSGATMA1 be used in automotive applications?

While not AEC-Q101 qualified, its JEDEC qualification, –55 to 150 °C operating range, and 100% avalanche testing support industrial and computing applications with automotive-adjacent thermal and reliability requirements. For certified automotive use, Infineon's DMTH3007LPSQ-13 is the functionally aligned AEC-Q101 alternative.

BSC042N03MSGATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4300 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 57W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-5

BSC042N03MSGATMA1 FAQ

1.How can I place an order for BSC042N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC042N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC042N03MSGATMA1 reliable?

The price and inventory of BSC042N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC042N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC042N03MSGATMA1?

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BSC042N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC042N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC042N03MSGATMA1?

For technical support, including BSC042N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC042N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC042N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC042N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC042N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC042N03MSGATMA1?

All BSC042N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC042N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC042N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC042N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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