Infineon Technologies BSC072N03LDGATMA1

Overview

BSC072N03LDGATMA1 from Infineon Technologies is a dual N-channel logic-level power MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC/DC converters and SMPS. It delivers R_DS(on) = 7.2 mΩ (max) at V_GS = 10 V, 20 A continuous drain current, and 100% avalanche-tested ruggedness for reliable switching under transient stress.

For engineers reviewing the BSC072N03LDGATMA1 datasheet, BSC072N03LDGATMA1 pinout, BSC072N03LDGATMA1 application, or BSC072N03LDGATMA1 equivalent, this device supports synchronous rectification, point-of-load regulation, and high-frequency buck converter topologies requiring low gate charge (Q_g = 31 nC) and fast switching (t_r = 4.0 ns).

Technical Context

This dual MOSFET integrates two matched N-channel silicon transistors in a single thermally enhanced PG-TDSON-8 package with exposed drain pad. Its logic-level gate threshold (V_GS(th) = 1–2.2 V) enables direct drive from 3.3 V or 5 V controllers, while the low Q_g × R_DS(on) figure of merit (FOM) minimizes conduction and switching losses simultaneously.

The device features integrated body diode with low V_SD = 0.87–1.1 V and Q_rr = 10 nC, supporting efficient synchronous FET operation in buck and half-bridge configurations. Thermal resistance R_thJC = 2.2 K/W (bottom) ensures effective heat transfer to PCB copper when mounted on 6 cm² FR4 cooling area.

Key Specifications

Pinout & Package

PG-TDSON-8 dual-package with exposed drain pad (pins 1–4 and 5–8 form two independent N-channel MOSFETs sharing common source terminals). Bottom-side thermal pad must be soldered to PCB copper for optimal thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with IPB80N04S4-03 and BSZ072N03LS, BSC072N03LDGATMA1 uniquely delivers dual-channel integration in compact TDSON-8, enabling space-constrained synchronous buck and half-bridge designs without sacrificing R_DS(on) or thermal performance.

Availability

BSC072N03LDGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial PLC I/O modules, and telecom DC/DC bricks requiring stable component supply, JEDEC-qualified reliability, and RoHS/halogen-free compliance.

Supply support for BSC072N03LDGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BSC072N03LDGATMA1 belongs to the OptiMOS™3 power transistor family, engineered specifically for high-frequency, high-efficiency DC/DC conversion in data center, telecom, and industrial power supplies.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The BSC072N03LDGATMA1 has a specified operating junction temperature range of −55 °C to +150 °C. For continuous operation at rated 20 A drain current, thermal design must maintain T_j ≤ 150 °C using the measured R_thJC = 2.2 K/W and ambient or case temperature constraints per the datasheet's derating curves.

Is the body diode suitable for synchronous rectification?

Yes - the integrated body diode exhibits V_SD = 0.87–1.1 V at 20 A and low Q_rr = 10 nC, making it suitable for synchronous rectification in buck converters up to 1 MHz. Its performance is characterized and validated in Infineon's application notes for POL regulators.

Does this part require a gate resistor for stability?

A gate resistor (R_G ≈ 1.6 Ω typical) is recommended to dampen ringing and control dV/dt during switching, as confirmed by the datasheet's test conditions for t_r, t_f, and E_AS. Omitting it may cause overshoot or shoot-through in high-speed layouts, especially with low-inductance gate loops.

How does the dual configuration affect thermal coupling between channels?

Both MOSFETs share the same exposed drain pad and substrate, resulting in strong thermal coupling. Under unbalanced loading, the hotter channel elevates the shared junction temperature - thermal design must therefore be based on worst-case total power dissipation (P_tot = P_ch1 + P_ch2) and the single R_thJC value of 2.2 K/W.