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Infineon Technologies BSC072N04LDATMA1

Part No.:
BSC072N04LDATMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixBSC072N04LDATMA1.pdf
Description:
MOSFET 2N-CH 40V 20A 8TDSON
Quantity:
Payment:
Payment
Shipping:
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Inventory:637

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Product details

Overview

BSC072N04LDATMA1 from Infineon Technologies is a dual N-channel logic-level MOSFET in PG-TDSON-8-4 package, rated for 40 V VDS, 7.2 mΩ RDS(on) at VGS = 10 V, and 20 A continuous drain current. It is optimized for synchronous rectification and fast-switching SMPS topologies in industrial power supplies and DC-DC converters.

For engineers reviewing the BSC072N04LDATMA1 datasheet, BSC072N04LDATMA1 pinout, BSC072N04LDATMA1 application, or BSC072N04LDATMA1 equivalent, key selection criteria include its dual-channel layout, low gate charge (Qg = 39–52 nC), avalanche-rated ruggedness (EAS = 87 mJ), and thermal resistance (RthJC = 2.3 °C/W).

Technical Context

This dual MOSFET integrates two independent N-channel silicon devices on a single die with shared source terminals configured as S1/G1/S2/G2/D1/D1/D2/D2 in TDSON-8-4. Its OptiMOSTM-T2 process delivers enhanced switching speed via low Ciss (3070–3990 pF) and Crss (36–72 pF), enabling high-frequency operation up to several hundred kHz in resonant and hard-switched topologies.

The device supports logic-level drive (VGS(th) = 1.2–2.2 V) and exhibits stable RDS(on) over temperature (normalized to 1.5× at 175 °C). Its integrated body diode features low VSD (0.85–1.1 V at 17 A) and fast reverse recovery (trr = 35 ns, Qrr = 35 nC), critical for synchronous rectifier efficiency.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for primary-side switching or secondary-side synchronous rectification in ≤48 V systems.
RDS(on), max7.2 mΩ at VGS = 10 V - Enables <1.5 W conduction loss at 20 A, supporting high-efficiency 50–100 W DC-DC stages.
Qg39–52 nC - Low total gate charge reduces driver power demand and enables clean 10–50 ns switching transitions.
EAS87 mJ - Confirmed single-pulse avalanche energy rating ensures robustness against inductive turn-off transients in flyback or LLC circuits.
RthJC2.3 °C/W - Junction-to-case thermal resistance allows direct heatsinking through PCB copper pads, supporting 65 W Ptot at TC = 25 °C.
trr35 ns - Fast reverse recovery time minimizes diode commutation losses and EMI in synchronous rectifier applications.

Pinout & Package

Package: PG-TDSON-8-4 (exposed drain pad, 5 mm × 6 mm footprint, 0.95 mm height), thermally enhanced surface-mount package with bottom-side thermal pad.

Pin/TerminalCircuit RoleDesign Meaning
S1Source of Channel 1Common source node for first MOSFET; electrically tied to exposed drain pad in typical layout.
G1Gate of Channel 1Control terminal for independent switching of first channel; requires <2.2 V threshold for logic-level drive.
S2Source of Channel 2Source node for second MOSFET; isolated from S1 unless externally connected.
G2Gate of Channel 2Independent gate input enabling dual-phase or complementary control schemes.
D1Drain of Channel 1Shared drain terminal with D1 (duplicate marking); connects to high-side or output node in half-bridge configuration.
D2Drain of Channel 2Second drain terminal (duplicate marking); used for independent load switching or paralleled operation.

Key Features

FeatureDesign Value
Dual N-channel topologyTwo fully isolated MOSFETs in one package reduce board area by ~40% vs. discrete solutions and simplify gate routing in dual-phase buck or SR designs.
Optimized for synchronous rectificationLow VSD (0.85 V typ.) and fast trr (35 ns) directly improve efficiency >2% in 12 V/48 V secondary-side rectification vs. Schottky alternatives.
100% avalanche testedEvery unit validated for 87 mJ single-pulse energy, eliminating need for external snubbers in inductive load switching.
Logic-level gate driveVGS(th) range (1.2–2.2 V) ensures full enhancement with 3.3 V or 5 V microcontroller GPIO, removing level-shifter requirement.

Applications

Server VRM Power StageIndustrial DC-DC Converter

Use Scenario: Dual-phase 48 V-to-12 V buck converter supplying CPU core voltage with <1% ripple and dynamic load response.

IC Role / Device Role: High-side and low-side switch pair per phase; each BSC072N04LDATMA1 provides one channel per phase.

Use Value: 7.2 mΩ RDS(on) and 39 nC Qg enable >95% peak efficiency at 20 A/phase while maintaining <100 ns dead-time control.

Use Scenario: Isolated 24 V input, 5 V/10 A output flyback with synchronous rectification on secondary side.

IC Role / Device Role: Dual-channel SR controller driving both rectifier MOSFETs in interleaved mode to halve current stress.

Use Value: Matched RDS(on) tracking and low Qrr (35 nC) reduce conduction and switching losses by 1.8 W vs. single-MOSFET SR implementation.

Telecom PoE++ PSEMotor Drive Half-Bridge

Use Scenario: IEEE 802.3bt Type 4 (90 W) Power Sourcing Equipment with dual-port simultaneous delivery.

IC Role / Device Role: Primary-side switching FET in active clamp forward topology; dual channels support redundant or parallel operation.

Use Value: 40 V rating and 80 A pulsed current capability handle 100 V transient surges during cable insertion without derating.

Use Scenario: 24 V BLDC motor driver for HVAC blowers with integrated half-bridge per phase.

IC Role / Device Role: Upper and lower switch in single-phase half-bridge; G1/S1 and G2/S2 driven by complementary PWM signals.

Use Value: 2.3 °C/W RthJC sustains 20 A continuous current at TC = 100 °C, enabling compact heatsinkless design in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB80N04S4-02Single-channel 80 A, 40 V, RDS(on) = 2.0 mΩ; larger TO-263 package; higher Qg (120 nC)Requires two devices for dual-channel function; better for high-current single-switch nodes, not space-constrained dual-phase layoutsSelect when board area is unconstrained and peak current exceeds 20 A per channel
IRF7341PBFDual N-channel SO-8, 40 V, RDS(on) = 55 mΩ, Qg = 19 nC; older TrenchFET generationHigher conduction loss limits use to ≤5 A applications; lacks avalanche rating and thermal performanceSelect only for cost-sensitive, low-power (<10 W), non-industrial designs where ruggedness is secondary

Compared with IPB80N04S4-02 and IRF7341PBF, BSC072N04LDATMA1 uniquely balances dual-channel integration, 7.2 mΩ conduction loss, and 2.3 °C/W thermal resistance-making it optimal for space- and efficiency-critical 20 A industrial SMPS where single-device replacement would increase layout complexity or thermal risk.

Availability

BSC072N04LDATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, PoE++ PSEs, and BLDC motor drives requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for BSC072N04LDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

BSC072N04LDATMA1 belongs to the OptiMOSTM-T2 power transistor family, engineered specifically for high-efficiency, high-frequency switching in industrial and telecom power conversion systems where thermal density and avalanche robustness are critical.

FAQ

What is the maximum operating junction temperature for BSC072N04LDATMA1?

The absolute maximum junction temperature is 175 °C, validated per JEDEC JESD22-A108. Continuous operation at this limit requires strict thermal design: PCB copper area ≥6 cm², ambient ≤75 °C, and case temperature maintained ≤100 °C using thermal vias and ground-plane coupling.

Does BSC072N04LDATMA1 support 3.3 V logic-level gate drive?

Yes-its gate threshold voltage ranges from 1.2 V to 2.2 V, ensuring full enhancement at VGS = 3.3 V. At 10 A drain current, RDS(on) is 8.0 mΩ (max) at VGS = 4.5 V and 7.2 mΩ at VGS = 10 V, confirming reliable switching with standard 3.3 V microcontrollers.

How is the dual-channel configuration wired in a half-bridge?

In half-bridge mode, G1 and S1 form the high-side switch (D1 connected to input rail), while G2 and S2 form the low-side switch (S2 tied to ground). D1 and D2 are separate drain terminals; the output node connects between S1 and S2. No internal connection exists between the two channels' sources or drains.

Is the exposed drain pad electrically connected to all drain pins?

Yes-the exposed thermal pad on the underside of the PG-TDSON-8-4 package is internally connected to both D1 and D2 terminals. It must be soldered to a large PCB copper pour tied to the system drain net to achieve specified RthJC = 2.3 °C/W and ensure mechanical reliability.

BSC072N04LDATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ T2
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
20A (Tc)
Rds On (Max) @ Id, Vgs:
7.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:
52nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
3990pF @ 20V
Power - Max:
65W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TDSON-8-4

BSC072N04LDATMA1 FAQ

1.How can I place an order for BSC072N04LDATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC072N04LDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC072N04LDATMA1 reliable?

The price and inventory of BSC072N04LDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC072N04LDATMA1 is usually 5 days.

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5.How can I obtain technical support or documentation for BSC072N04LDATMA1?

For technical support, including BSC072N04LDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC072N04LDATMA1 requirements.

6.How does Aetrix verify that BSC072N04LDATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC072N04LDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC072N04LDATMA1 meets industry standards.

7.What is the process for return or replacement of BSC072N04LDATMA1?

All BSC072N04LDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC072N04LDATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC072N04LDATMA1 part is unused and in its original packaging.

Return procedure for BSC072N04LDATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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