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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies BSC076N04NDATMA1

Name: BSC076N04NDATMA1
Brand: Infineon Technologies
SKU: BSC076N04NDATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC076N04NDATMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-PowerVDFN

Datasheet:: BSC076N04NDATMA1.pdf

Description:: MOSFET 2N-CH 40V 20A 8TDSON

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Product details

Overview

BSC076N04NDATMA1 from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in PG-TDSON-8-4 package, rated for 40 V V_DS, 7.6 mΩ R_DS(on) at V_GS = 10 V, and 20 A continuous drain current. It integrates two independent power switches optimized for industrial motor drives, featuring 100% avalanche-tested ruggedness, low gate charge (Q_g = 38 nC), and superior thermal resistance (R_thJC = 2.3 °C/W).

For engineers reviewing the BSC076N04NDATMA1 datasheet, BSC076N04NDATMA1 pinout, BSC076N04NDATMA1 application, or BSC076N04NDATMA1 equivalent, key selection criteria include dual-channel layout for half-bridge or synchronous rectifier topologies, fast switching performance (t_r = 4 ns, t_f = 7 ns), and validated operation across –55 °C to +175 °C junction temperature range.

Technical Context

This OptiMOSTM-T2 device implements two discrete N-channel MOSFETs in a single thermally enhanced TDSON-8-4 package with bottom-side cooling. Each channel supports independent gate control (G1/G2) and source/drain separation (S1/D1 and S2/D2), enabling use in high-efficiency DC-DC converters and three-phase inverter legs without cross-conduction risk.

Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures compatibility with standard 3.3 V and 5 V logic-level drivers, while the low Crss (48 pF max) and Q_gd/Q_g ratio (≤18%) minimize Miller-induced turn-off delay and improve hard-switching robustness in industrial PWM systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage per channel; suitable for 24 V and 36 V bus systems with margin.
R_DS(on) max	7.6 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 20 A per channel under typical gate drive.
I_D cont	20 A @ T_C = 25 °C - Continuous current rating per channel with adequate PCB copper area (6 cm²).
Q_g	38 nC - Total gate charge determines driver strength requirement; enables efficient 100 kHz+ switching.
t_r/t_f	4 ns / 7 ns - Fast edge rates reduce switching transition losses in high-frequency power stages.
E_AS	87 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive load transients.
R_thJC	2.3 °C/W - Low junction-to-case thermal resistance supports high-power density designs with bottom-side heatsinking.

Pinout & Package

Package: PG-TDSON-8-4 (exposed drain pad, 5 mm × 6 mm footprint, 0.95 mm height). Bottom-side thermal pad requires solder connection to PCB copper for optimal thermal performance.

Pin/Terminal	Circuit Role	Design Meaning
S1	Source of Channel 1	Low-side reference node for first MOSFET; electrically isolated from S2.
G1	Gate of Channel 1	Independent control input; requires dedicated gate resistor to suppress oscillation.
D1	Drain of Channel 1	High-side switching node; connected internally to exposed thermal pad.
S2	Source of Channel 2	Separate source terminal enables floating high-side configuration or independent low-side switching.
G2	Gate of Channel 2	Fully isolated gate input; allows asynchronous or complementary drive schemes.
D2	Drain of Channel 2	Second high-side node; shares thermal pad but electrically isolated from D1.

Key Features

Feature	Design Value
Dual-channel integration	Two independent 40 V/20 A N-MOSFETs in one 8-pin TDSON package reduces board area by ~40% vs discrete solutions.
Optimized for drives	Low R_DS(on) and fast switching minimize conduction + switching losses in servo and BLDC motor inverters.
100% avalanche tested	Each unit passes single-pulse E_AS stress test (87 mJ), ensuring reliability in inductive load commutation.
Thermal performance	R_thJA = 60 °C/W on minimal pad and 2.3 °C/W junction-to-case enable >30 W dissipation with proper heatsinking.

Applications

Industrial Motor Drives

DC-DC Synchronous Rectification

Use Scenario: Three-phase inverter stage in compact servo drives operating from 24–36 V DC bus.

IC Role / Device Role / Timing Role: Dual-channel half-bridge upper/lower switch per phase leg; each channel handles 20 A peak motor current.

Use Value: 7.6 mΩ R_DS(on) and 38 nC Q_g reduce total power loss by ≥15% compared to legacy 12 mΩ dual MOSFETs at 20 kHz PWM.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V–12 V buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: Two parallel low-side switches replacing Schottky diodes; driven by transformer-coupled gate signals.

Use Value: 0.9 V V_SD forward drop and 20 A continuous rating cut conduction loss by >60% versus 40 V Schottky diodes.

Automotive Body Control Modules

High-Density Power Distribution Units

Use Scenario: Load switching for headlights, HVAC blowers, and window lift motors in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Dual-channel protected switch replacing mechanical relays; controlled via microcontroller GPIO with external gate drivers.

Use Value: –55 °C to +175 °C qualified operation and 100% avalanche testing ensure field reliability under cold cranking and under-hood thermal stress.

Use Scenario: Solid-state circuit breaker in industrial PLC backplanes requiring redundant 20 A output channels.

IC Role / Device Role / Timing Role: Dual independent load switches with separate gate control for fault isolation and hot-swap capability.

Use Value: Independent S1/S2 terminals allow galvanic separation between loads; R_DS(on) stability over temperature (±15% from –40 °C to +125 °C) enables precise current limiting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 2.2 mΩ R_DS(on), 120 A I_D, H2PAK-2 package (larger, higher current)	Single-channel only; requires two devices for dual functionality	Preferred when higher current per channel (>50 A) and lower R_DS(on) are critical, and board space permits larger package.
ON Semiconductor NTMFS4C09NT1G	40 V, 9.0 mΩ R_DS(on), 17 A I_D, SO-8FL package (no exposed thermal pad)	Higher R_thJA (100 °C/W), no bottom-side thermal interface	Acceptable for lower-power (<15 A), cost-sensitive designs where thermal performance is secondary to footprint size.

Compared with STL220N4F7AG and NTMFS4C09NT1G, BSC076N04NDATMA1 uniquely delivers dual-channel integration, 2.3 °C/W thermal resistance, and 7.6 mΩ R_DS(on) in a compact 5×6 mm TDSON package-making it optimal for space-constrained industrial drives requiring balanced performance, ruggedness, and thermal efficiency.

Availability

BSC076N04NDATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC synchronous rectification, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for BSC076N04NDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

BSC076N04NDATMA1 belongs to the OptiMOSTM-T2 product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial motor drives and battery-powered equipment where thermal density and ruggedness are critical.

FAQ

What is the maximum safe operating temperature for BSC076N04NDATMA1?

The device is rated for junction temperatures from –55 °C to +175 °C, with guaranteed electrical performance up to 175 °C. Thermal design must maintain T_j ≤ 175 °C under worst-case ambient and power dissipation conditions, using the specified R_thJC = 2.3 °C/W and appropriate PCB copper area.

Can BSC076N04NDATMA1 be used in a high-side configuration?

Yes-each channel operates as a standard N-channel MOSFET and can be used in high-side topology when paired with a gate driver capable of providing V_GS ≥ 10 V above the source potential. S1 and S2 are electrically isolated, enabling independent high-side or floating configurations per channel.

Is the internal body diode suitable for reverse recovery in hard-switched applications?

The integrated body diode has t_rr = 35 ns and Q_rr = 35 nC at T_j = 25 °C, making it suitable for synchronous rectification and freewheeling in non-resonant topologies. For ZVS or high-di/dt applications, external Schottky clamping may still be recommended to limit voltage overshoot.

Does BSC076N04NDATMA1 require special PCB layout considerations?

Yes-the exposed drain pad (pins D1/D2) must be soldered to a minimum 6 cm² copper area on the PCB's bottom layer for thermal performance. Gate traces should be short and routed away from noisy power paths; separate ground returns for G1/G2 are recommended to prevent crosstalk in high-speed switching.

BSC076N04NDATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ T2

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 40V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Rds On (Max) @ Id, Vgs:: 7.6mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 4V @ 30µA

Gate Charge (Qg) (Max) @ Vgs:: 38nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds:: 2950pF @ 20V

Power - Max:: 2.3W (Ta), 65W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-4

BSC076N04NDATMA1 FAQ

1.How can I place an order for BSC076N04NDATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC076N04NDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC076N04NDATMA1 reliable?

The price and inventory of BSC076N04NDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC076N04NDATMA1 is usually 5 days.

3.What payment methods are accepted for BSC076N04NDATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC076N04NDATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC076N04NDATMA1?

BSC076N04NDATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC076N04NDATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC076N04NDATMA1?

For technical support, including BSC076N04NDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC076N04NDATMA1 requirements.

6.How does Aetrix verify that BSC076N04NDATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC076N04NDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC076N04NDATMA1 meets industry standards.

7.What is the process for return or replacement of BSC076N04NDATMA1?

All BSC076N04NDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC076N04NDATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC076N04NDATMA1 part is unused and in its original packaging.

Return procedure for BSC076N04NDATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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