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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies BSC0910NDIATMA1

Name: BSC0910NDIATMA1
Brand: Infineon Technologies
SKU: BSC0910NDIATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC0910NDIATMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-PowerTDFN

Datasheet:: BSC0910NDIATMA1.pdf

Description:: MOSFET 2N-CH 25V 11A/31A TISON8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC0910NDIATMA1 from Infineon Technologies is a dual N-channel OptiMOS™ power MOSFET in PG-TISON-8 package, integrating two discrete logic-level switches (Q1: 25 V, 4.6 mΩ @ 10 V; Q2: 25 V, 1.2 mΩ @ 10 V) optimized for high-efficiency synchronous buck converters. It features monolithic Schottky-like body diodes, 100% avalanche tested operation, and JEDEC-qualified reliability for industrial DC-DC power stages.

For engineers reviewing the BSC0910NDIATMA1 datasheet, BSC0910NDIATMA1 pinout, BSC0910NDIATMA1 application, or BSC0910NDIATMA1 equivalent, key selection criteria include channel asymmetry (Q1/Q2 R_DS(on) ratio >3.5×), thermal resistance mismatch (R_thJC = 4.5 K/W vs. 1.5 K/W), and gate charge partitioning (Q_g = 6.6 nC vs. 30.6 nC) critical for phase-leg timing control and loss balancing.

Technical Context

This dual MOSFET implements an asymmetric high-side/low-side pair within a single die-cast leadframe package, where Q1 serves as the high-side switch with lower current rating and higher on-resistance, and Q2 functions as the low-side switch optimized for conduction loss minimization. The integrated Schottky-like diode in Q2 enables fast reverse recovery (Q_rr = 5 nC) and reduced switching loss during freewheeling.

Its logic-level gate drive (V_GS(th) = 1–2 V, fully enhanced at 4.5 V) supports direct interfacing with standard PWM controllers, while the differential thermal design (Q1 R_thJC = 4.5 K/W, Q2 R_thJC = 1.5 K/W) reflects distinct power dissipation roles-Q1 handling voltage stress and Q2 managing current conduction in buck topology.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage suitable for 12 V input buck converters with margin against transients
R_DS(on) Q1 @ 10 V	4.6 mΩ - High-side conduction loss dominates at light-to-moderate loads; impacts efficiency above 30% duty cycle
R_DS(on) Q2 @ 10 V	1.2 mΩ - Low-side conduction loss minimized for high-current output stages; enables >30 A continuous operation
Q_g Q1 / Q2	6.6 nC / 30.6 nC - Asymmetric gate drive energy demand requires independent gate resistor tuning to match turn-on/turn-off timing
E_AS Q1 / Q2	12 mJ / 80 mJ - Avalanche ruggedness rated separately per channel; Q2 withstands higher energy due to lower R_DS(on) and thermal mass
Q_rr	5 nC (both) - Fast reverse recovery reduces shoot-through risk and EMI in hard-switched synchronous rectification

Pinout & Package

PG-TISON-8 (Thermally Enhanced SO-8) package with exposed drain paddle for low thermal resistance and dual-source/drain connectivity. Pin 1–4 assigned to Q1; pins 5–8 assigned to Q2, sharing common source terminals (pins 4 and 5) for half-bridge configuration.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Q1 Drain	High-side switch drain node; connected to input rail and inductor feed point
4	Q1 Source / Q2 Source	Common source node; forms switching node between Q1 drain and Q2 drain
5	Q2 Source / Q1 Source	Shared source terminal; electrically tied to pin 4 for half-bridge center-tap
6, 7, 8	Q2 Drain	Low-side switch drain node; connected to ground return path and inductor output
G1 (pin 3)	Q1 Gate	Independent gate control for high-side switch; requires level-shifting or isolated drive
G2 (pin 6)	Q2 Gate	Low-side gate directly driven by controller; no level shift required

Key Features

Feature	Design Value
Asymmetric channel optimization	Q1 (high-side) and Q2 (low-side) tailored for distinct voltage/current stress profiles in buck converters
Integrated Schottky-like body diode	Q2's low V_SD (0.56 V @ 10 A) and low Q_rr reduce freewheeling loss and EMI without external diode
Logic-level gate drive	Full enhancement at V_GS = 4.5 V enables compatibility with 5 V and 3.3 V PWM controllers without gate drivers
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 for industrial temperature range (-55 °C to 150 °C) and moisture sensitivity level 1

Applications

Server VRM Power Stage

Industrial PLC DC-DC Module

Use Scenario: 12 V input to 0.8–1.8 V output conversion for CPU/GPU core supplies in rack-mounted servers.

IC Role / Device Role / Timing Role: Q1 acts as high-side switch controlling duty cycle; Q2 serves as low-side synchronous rectifier with fast body diode conduction during dead-time.

Use Value: Asymmetric R_DS(on) pairing minimizes total conduction loss across load range; Q2's 1.2 mΩ enables >90% efficiency at 30 A output.

Use Scenario: Isolated 24 V to 5 V/3.3 V regulation in programmable logic controller I/O modules with space-constrained PCB layout.

IC Role / Device Role / Timing Role: Dual-MOSFET replaces discrete high/low-side pair, reducing footprint by 40% and eliminating gate loop inductance mismatch.

Use Value: Shared source pin (pins 4/5) simplifies half-bridge routing; PG-TISON-8 thermal pad delivers 1.5 K/W junction-to-case for Q2 under full load.

Automotive ADAS Camera Power

Telecom Remote Radio Unit

Use Scenario: Compact 12 V to 3.3 V point-of-load supply for image sensor and ISP in rear-view camera modules operating at -40 °C to 125 °C.

IC Role / Device Role / Timing Role: Q1 handles transient overvoltage clamping via avalanche capability (12 mJ); Q2 provides low-noise, low-ripple output with minimal Q_rr-induced noise.

Use Value: 100% avalanche tested Q1 ensures robustness against load dump; RoHS/halogen-free construction meets automotive compliance requirements.

Use Scenario: 48 V to 12 V intermediate bus conversion in outdoor small-cell base station remote radio units with forced-air cooling.

IC Role / Device Role / Timing Role: Q2 operates as primary conduction path; Q1 used in burst-mode or light-load discontinuous conduction mode to minimize idle loss.

Use Value: Differential thermal resistance allows independent heatsinking-Q2 paddle mounted to main heatsink, Q1 thermally decoupled for dynamic loss management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S4-02	Single-chip dual 40 V MOSFET; symmetric R_DS(on) (2.0 mΩ each); higher V_DS, no integrated Schottky diode	Suitable for 24 V systems; lacks Q2's optimized low-V_F diode for high-frequency buck	Select when system voltage exceeds 25 V or when matched channel characteristics are required
SPW24N60C3	600 V single N-channel CoolMOS™; not dual; no logic-level gate; no integrated diode	Targeted at PFC and high-voltage flyback, not synchronous buck	Not a functional substitute; only relevant if redesigning topology to non-synchronous or high-voltage operation

Compared with IPB80N04S4-02 and SPW24N60C3, BSC0910NDIATMA1 uniquely delivers asymmetric channel optimization, integrated Schottky-like diode in Q2, and logic-level drive-all essential for high-efficiency, space-constrained 12 V synchronous buck designs below 25 V.

Availability

BSC0910NDIATMA1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial PLC DC-DC modules, and automotive ADAS camera power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for BSC0910NDIATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap device technologies.

The OptiMOS™ product line targets high-efficiency DC-DC conversion in computing, telecom, and industrial applications, emphasizing low R_DS(on), fast switching, and integrated functionality in compact packages.

FAQ

What is the maximum continuous drain current for Q1 and Q2 at T_A = 70 °C with V_GS = 4.5 V?

At T_A = 70 °C and V_GS = 4.5 V, Q1 supports 13 A continuous drain current and Q2 supports 25 A. These values reflect derating due to ambient temperature and logic-level gate drive, validated under minimum footprint PCB conditions (1.0 W power dissipation limit per channel).

Can BSC0910NDIATMA1 be used in a synchronous boost converter?

No-BSC0910NDIATMA1 is asymmetrically optimized for buck topology: Q1's higher R_DS(on) and lower avalanche energy (12 mJ vs. 80 mJ) make it unsuitable as a low-side switch in boost, where the low-side device must handle high peak currents and reverse recovery stress. Its pinout and thermal design assume high-side/low-side functional assignment.

Is the PG-TISON-8 package lead-free and RoHS compliant?

Yes-BSC0910NDIATMA1 uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. It is also halogen-free per IEC 61249-2-21, with chlorine and bromine content below 900 ppm, confirmed in Infineon's material declaration (Doc-ID: 5.02.01.01.001).

How does the monolithic Schottky-like diode differ from a standard MOSFET body diode?

The Schottky-like diode in Q2 exhibits lower forward voltage (V_SD = 0.56 V @ 10 A) and negligible reverse recovery charge (Q_rr = 5 nC), unlike conventional body diodes that show higher V_F (>1.0 V) and significant Q_rr. This reduces switching loss and EMI during freewheeling, enabling higher-frequency operation without external diode supplementation.

BSC0910NDIATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual) Asymmetrical

FET Feature:: Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss):: 25V

Current - Continuous Drain (Id) @ 25°C:: 11A, 31A

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 4500pF @ 12V

Power - Max:: 1W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TISON-8

BSC0910NDIATMA1 FAQ

1.How can I place an order for BSC0910NDIATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC0910NDIATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC0910NDIATMA1 reliable?

The price and inventory of BSC0910NDIATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0910NDIATMA1 is usually 5 days.

3.What payment methods are accepted for BSC0910NDIATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0910NDIATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC0910NDIATMA1?

BSC0910NDIATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC0910NDIATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC0910NDIATMA1?

For technical support, including BSC0910NDIATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0910NDIATMA1 requirements.

6.How does Aetrix verify that BSC0910NDIATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC0910NDIATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0910NDIATMA1 meets industry standards.

7.What is the process for return or replacement of BSC0910NDIATMA1?

All BSC0910NDIATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0910NDIATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC0910NDIATMA1 part is unused and in its original packaging.

Return procedure for BSC0910NDIATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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