Infineon Technologies BSC0911NDATMA1

Overview

BSC0911NDATMA1 from Infineon Technologies is a dual N-channel OptiMOS™ power MOSFET in PG-TISON-8 package, optimized for high-efficiency synchronous buck converters. It integrates two discrete logic-level MOSFETs (Q1: 25 V, 40 A, R_DS(on) = 3.2 mΩ @ 10 V; Q2: 25 V, 40 A, R_DS(on) = 1.2 mΩ @ 10 V) with asymmetric channel sizing for high-side/low-side operation in DC-DC regulation.

For engineers reviewing the BSC0911NDATMA1 datasheet, BSC0911NDATMA1 pinout, BSC0911NDATMA1 application, or BSC0911NDATMA1 equivalent, key selection criteria include asymmetric R_DS(on) pairing, 4.5 V logic-level gate drive compatibility, thermal resistance (R_thJC = 3.4 K/W for Q1, 1.5 K/W for Q2), and integrated reverse diode performance (V_SD = 0.79–0.84 V).

Technical Context

This dual MOSFET implements an asymmetric high-side/low-side topology where Q1 serves as the upper switch (higher R_DS(on), lower capacitance) and Q2 as the lower switch (lower R_DS(on), higher C_iss/C_oss). Gate plateau voltage is 2.6 V (Q1) and 2.3 V (Q2), enabling stable switching under 4.5 V logic drive.

Thermal design is differentiated per channel: Q1 has R_thJC = 3.4 K/W and Q2 has R_thJC = 1.5 K/W, reflecting distinct power dissipation profiles. Dynamic parameters confirm fast switching-t_d(on) = 3.3 ns (Q1), 3.8 ns (Q2); t_f = 2.2 ns (Q1), 4.0 ns (Q2)-with Q_g = 7.7–12 nC (Q1) and 25–37 nC (Q2).

Key Specifications

Pinout & Package

PG-TISON-8 (8-pin exposed-pad surface-mount package) with integrated thermal pad for enhanced heatsinking. Pin 1–8 arranged in dual-source configuration supporting independent gate control and shared drain/source routing per channel.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with IPB80N04S4-03 and BSC010N04LS, BSC0911NDATMA1 delivers superior thermal performance (R_thJC = 1.5 K/W for Q2) and tighter 25 V rating optimized for 12 V input stages, making it ideal for space-constrained, high-efficiency server and telecom POL designs.

Availability

BSC0911NDATMA1 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery, industrial PLC I/O modules, and telecom baseband power supplies requiring stable component supply and qualified industrial-grade MOSFETs.

Supply support for BSC0911NDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS™ product line targets high-efficiency DC-DC conversion in computing, telecom, and industrial power supplies, emphasizing low R_DS(on), fast switching, and thermal robustness in compact packages.

FAQ

What is the maximum junction temperature for continuous operation?

The BSC0911NDATMA1 supports continuous operation up to T_j = 150 °C, as specified in its JEDEC qualification and thermal derating curves. At T_A = 70 °C and V_GS = 4.5 V, Q2 delivers 24 A continuous drain current, confirming safe operation within this limit when PCB cooling meets minimum footprint requirements.

Can Q1 and Q2 be used interchangeably in a synchronous buck layout?

No-Q1 and Q2 are intentionally asymmetric: Q1 has higher R_DS(on) (3.2 mΩ) and lower C_iss (1200–1600 pF), optimized for high-side switching; Q2 has lower R_DS(on) (1.2 mΩ) and higher C_iss (3800–5100 pF), optimized for low-side conduction. Swapping roles degrades efficiency and increases thermal stress on Q1.

Does the exposed thermal pad require solder paste stencil aperture adjustment?

Yes-the exposed pad must be fully soldered using a 100% copper fill stencil aperture and recommended reflow profile (J-STD-020). Thermal resistance drops significantly only when the pad achieves full metallurgical bond; partial coverage increases R_thJC by ≥30%, especially critical for Q2's 1.5 K/W rating.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes-the Q2 body diode exhibits Q_rr = 20 nC and V_SD = 0.79 V at 20 A, indicating soft recovery behavior suitable for synchronous buck operation. However, in hard-switched LLC or phase-shifted full-bridge topologies, external SiC Schottky clamping is recommended due to limited dI/dt rating (100 A/µs test condition).