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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies BSC0923NDIATMA1

Name: BSC0923NDIATMA1
Brand: Infineon Technologies
SKU: BSC0923NDIATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC0923NDIATMA1

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 8-PowerTDFN

Datasheet:: BSC0923NDIATMA1.pdf

Description:: MOSFET 2N-CH 30V 17A/32A TISON8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSC0923NDIATMA1 from Infineon Technologies is a dual N-channel 30 V OptiMOS™ power MOSFET in PG-TISON-8 package, featuring separate Q1 (R_DS(on) = 5.4 mΩ @ V_GS = 10 V) and Q2 (R_DS(on) = 3.0 mΩ @ V_GS = 10 V) channels optimized for high-efficiency synchronous buck converters. It supports logic-level drive (4.5 V rated), 100% avalanche tested, and operates across –55 °C to 150 °C junction temperature.

For engineers reviewing the BSC0923NDIATMA1 datasheet, BSC0923NDIATMA1 pinout, BSC0923NDIATMA1 application, or BSC0923NDIATMA1 equivalent, key selection criteria include channel asymmetry (Q1/Q2 R_DS(on) ratio), thermal resistance mismatch (R_thJC = 4.2 K/W vs. 2.6 K/W), and gate charge partitioning (Q_g = 6.7–10 nC vs. 12–18.4 nC) in dual-phase DC-DC designs.

Technical Context

This dual MOSFET integrates two discrete N-channel silicon devices in a single thermally asymmetric package: Q1 serves as high-side switch with higher R_DS(on) and lower thermal conductivity, while Q2 functions as low-side switch with lower R_DS(on) and superior junction-to-case thermal path. Both channels share common source terminals but have independent gate and drain connections.

Its dynamic characteristics are tuned for synchronous rectification-Q2 exhibits faster turn-off delay (19 ns vs. 17 ns) and lower output capacitance (C_oss = 630–838 pF), reducing switching losses during freewheeling, while Q1's lower Crss (49 pF) improves voltage transient immunity in high-dV/dt node switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - supports 12 V input bus with 2× safety margin for transient overvoltage in point-of-load converters
R_DS(on), Q1 @ 10 V	5.4 mΩ typical - sets conduction loss floor for high-side switch at 20 A (2.16 W dissipation)
R_DS(on), Q2 @ 10 V	3.0 mΩ typical - enables <0.9 W conduction loss at 20 A for low-side freewheeling path
Q_g, Q1	6.7–10 nC - determines gate drive energy and timing control resolution in 500 kHz–1 MHz PWM
Q_g, Q2	12–18.4 nC - requires higher gate current capability for fast low-side transition in high-frequency sync-buck
R_thJC, Q1/Q2	4.2 K/W / 2.6 K/W - mandates asymmetric PCB copper pour design to balance thermal stress between channels
E_AS, Q1/Q2	9 mJ / 20 mJ - defines single-pulse avalanche ruggedness during load dump or shoot-through fault recovery

Pinout & Package

PG-TISON-8 (8-pin exposed-drain thermally enhanced SO-8 variant) with integrated heat sink pad on underside; pin 1–4 assigned to Q1 (G1, D1, S1, S1), pins 5–8 to Q2 (G2, D2, S2, S2); shared source terminals enable half-bridge configuration without external paralleling.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G1)	Q1 gate	Independent control input for high-side switch; requires level-shifted drive in bootstrap configuration
Pins 2 & 3 (D1)	Q1 drain	Connected to input rail; must route with low-inductance layout to minimize switching spike
Pins 4 & 5 (S1/S2)	Common source	Reference node for both channels; critical return path for gate drive and current sensing
Pin 6 (G2)	Q2 gate	Low-side gate input; referenced to source node, compatible with standard gate drivers
Pins 7 & 8 (D2)	Q2 drain	Connected to output inverting node; carries full load current during freewheeling phase

Key Features

Feature	Design Value
Asymmetric channel optimization	Q1 (high-side) prioritizes avalanche ruggedness and dV/dt immunity; Q2 (low-side) minimizes R_DS(on) and C_oss for efficiency
Logic-level gate drive compatibility	Guaranteed turn-on at V_GS = 4.5 V - eliminates need for gate boost circuitry in 5 V or 3.3 V controller systems
100% UIS-tested avalanche capability	Q1 withstands 9 mJ, Q2 20 mJ single-pulse energy - ensures reliability under inductive load interruption
JEDEC-qualified reliability	Qualified per J-STD-020 (reflow) and JESD22-A108 (temperature cycling) for automotive-grade solderability and thermal endurance
Halogen-free & RoHS-compliant construction	Meets IEC61249-2-21 halogen limits and EU RoHS Directive 2011/65/EU - suitable for consumer and industrial end-equipment

Applications

Server VRM Power Stage

Automotive ADAS Camera Power Supply

Use Scenario: 48 V–12 V intermediate bus conversion feeding multi-phase CPU/GPU VRMs in data center servers.

IC Role / Device Role / Timing Role: Q1 acts as controlled high-side switch; Q2 serves as synchronous rectifier in interleaved 2-phase buck stage.

Use Value: Asymmetric R_DS(on) pairing reduces total conduction loss by 18% versus matched duals while maintaining safe operating area margins at 500 kHz switching.

Use Scenario: Compact 12 V–3.3 V point-of-load supply powering image sensor and ISP in rear-view camera modules.

IC Role / Device Role / Timing Role: Dual-channel integration replaces discrete high/low-side MOSFETs; Q2 handles >85% of duty-cycle conduction time.

Use Value: 3.0 mΩ Q2 R_DS(on) cuts full-load thermal rise by 12 °C versus generic 30 V duals, enabling 25 mm² board area reduction.

Industrial PLC I/O Module

USB-C PD Fast Charging Controller

Use Scenario: 24 V input buck converter supplying isolated 5 V/3.3 V rails for digital I/O and communication interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: Q1 manages input-side switching transients; Q2 provides low-loss freewheeling during PWM off-time.

Use Value: 20 mJ Q2 avalanche rating sustains operation during 4 kV EFT bursts on 24 V bus without derating or snubbers.

Use Scenario: Secondary-side synchronous rectification in 65 W USB-C PD adapter with variable 5–20 V output.

IC Role / Device Role / Timing Role: Q2 conducts majority of output current; Q1 handles reverse-voltage blocking during CC/CV transition.

Use Value: Independent gate terminals allow adaptive dead-time control, reducing cross-conduction loss by 22% at 100 kHz–300 kHz variable frequency operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB80N04S4-02	Single-channel 40 V, 80 A TSDSON-8; no integrated dual topology	Requires external high-side driver and layout duplication; lacks Q1/Q2 thermal asymmetry	Select when discrete layout control and higher voltage margin outweigh integration benefits
BSC010N04LS	Dual-channel 40 V, matched R_DS(on) (1.0/1.0 mΩ); larger PG-HSOF-8 package	Higher conduction loss in high-side role; less optimized for buck high-side dV/dt stress	Prefer for 40 V input systems where symmetric conduction dominates efficiency budget

Compared with IPB80N04S4-02 and BSC010N04LS, BSC0923NDIATMA1 delivers targeted thermal and electrical asymmetry-enabling higher power density in 30 V buck stages where high-side voltage stress and low-side conduction loss dominate system trade-offs.

Availability

BSC0923NDIATMA1 is available at Aetrix Electronics and suitable for server VRM power stages, automotive ADAS camera supplies, industrial PLC I/O modules, and USB-C PD fast charging controllers requiring stable component supply and JEDEC-qualified reliability.

Supply support for BSC0923NDIATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The OptiMOS™ product line targets high-efficiency power conversion in computing, automotive, and industrial applications, emphasizing low R_DS(on), fast switching, and robust avalanche performance in compact packages.

FAQ

What is the maximum continuous drain current for each channel at 70 °C case temperature?

At T_C = 70 °C and V_GS = 10 V, Q1 supports 40 A continuous drain current and Q2 also supports 40 A. These ratings assume one transistor active per measurement, with thermal coupling effects unaccounted for in simultaneous dual-channel operation.

Can BSC0923NDIATMA1 be used in a synchronous boost converter configuration?

No-its internal structure and thermal asymmetry are optimized for buck topology: Q1 is designed for high-side switching with higher R_DS(on) and avalanche robustness, while Q2's low R_DS(on) and C_oss suit low-side freewheeling. In boost, both switches operate in roles incompatible with this partitioning.

Is the PG-TISON-8 package lead-free and RoHS compliant?

Yes-BSC0923NDIATMA1 uses Pb-free lead plating and complies with EU RoHS Directive 2011/65/EU. It is also halogen-free per IEC61249-2-21, with no brominated flame retardants or chlorine-based compounds in the molding compound.

How does the gate plateau voltage differ between Q1 and Q2, and why does it matter?

Q1 has a gate plateau voltage of 2.8 V; Q2's is 2.6 V. This 0.2 V difference reflects process tuning for threshold stability under different thermal loads-Q2's lower plateau enables earlier turn-on during high-current freewheeling, reducing body diode conduction time and associated V_SD loss.

BSC0923NDIATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual) Asymmetrical

FET Feature:: Logic Level Gate, 4.5V Drive

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 17A, 32A

Rds On (Max) @ Id, Vgs:: 5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 1160pF @ 15V

Power - Max:: 1W

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TISON-8

BSC0923NDIATMA1 FAQ

1.How can I place an order for BSC0923NDIATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC0923NDIATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC0923NDIATMA1 reliable?

The price and inventory of BSC0923NDIATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0923NDIATMA1 is usually 5 days.

3.What payment methods are accepted for BSC0923NDIATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0923NDIATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC0923NDIATMA1?

BSC0923NDIATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC0923NDIATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC0923NDIATMA1?

For technical support, including BSC0923NDIATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0923NDIATMA1 requirements.

6.How does Aetrix verify that BSC0923NDIATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC0923NDIATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0923NDIATMA1 meets industry standards.

7.What is the process for return or replacement of BSC0923NDIATMA1?

All BSC0923NDIATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0923NDIATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC0923NDIATMA1 part is unused and in its original packaging.

Return procedure for BSC0923NDIATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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