Infineon Technologies BSC0924NDIATMA1

Overview

BSC0924NDIATMA1 from Infineon Technologies is a dual N-channel 30 V OptiMOS™ power MOSFET in PG-TISON-8 package, featuring integrated monolithic Schottky-like diodes and logic-level gate drive (4.5 V rated). It delivers R_DS(on) of 5.0 mΩ (Q1) and 3.7 mΩ (Q2) at V_GS = 10 V, with 40 A continuous drain current per channel at T_C = 70 °C, optimized for high-efficiency synchronous buck converters in server VRMs and POL modules.

For engineers reviewing the BSC0924NDIATMA1 datasheet, BSC0924NDIATMA1 pinout, BSC0924NDIATMA1 application, or BSC0924NDIATMA1 equivalent, key selection criteria include channel asymmetry (Q1/Q2 R_DS(on) and I_D ratings), integrated body diode performance (V_SD = 0.86 V / 0.56 V), thermal resistance (R_thJC = 4.2 / 3.4 K/W), and avalanche ruggedness (E_AS = 9 / 10 mJ).

Technical Context

This dual MOSFET integrates two discrete N-channel silicon power transistors with asymmetric conduction characteristics: Q1 optimized for high-current, high-R_DS(on) tolerance (5.0 mΩ max @ 10 V), Q2 for lower-loss synchronous rectification (3.7 mΩ max @ 10 V). Both channels share a common source configuration and are co-packaged to minimize parasitic inductance in high-frequency switching topologies.

The device employs Infineon's OptiMOS™ process with monolithic Schottky-like diodes enabling fast reverse recovery (Q_rr = 5 nC per channel) and low forward voltage (V_SD ≤ 0.86 V), eliminating need for external freewheeling diodes in buck stages operating up to 1 MHz. Gate plateau voltage is 2.8 V (Q1) and 2.7 V (Q2), supporting robust logic-level drive compatibility.

Key Specifications

Pinout & Package

PG-TISON-8 (8-pin thermally enhanced SO-8 variant) with exposed drain pad on bottom side for direct PCB thermal coupling. Pin 1–4 assigned to Q1; Pin 5–8 assigned to Q2; all sources internally tied to respective pins and externally accessible for independent gate control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with IRF7759L2TRPBF and DMTH3004LPSQ-13, BSC0924NDIATMA1 offers optimal balance of integrated diode functionality, asymmetric optimization for buck efficiency, and compact PG-TISON-8 footprint-making it preferred for space-constrained, high-density server and telecom POL designs where layout simplicity and thermal performance are prioritized over absolute minimum R_DS(on).

Availability

BSC0924NDIATMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom point-of-load converters, and industrial motor drive auxiliary supplies requiring stable component supply and long-term production continuity.

Supply support for BSC0924NDIATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The OptiMOS™ product line targets high-efficiency DC-DC conversion in datacenter, telecom, and industrial power systems, emphasizing low R_DS(on), fast switching, and integrated features to reduce system-level component count and improve power density.

FAQ

What is the thermal pad connection requirement for BSC0924NDIATMA1?

The PG-TISON-8 package features an exposed drain pad on the underside that must be soldered to a minimum 6 cm² copper area on the PCB for effective heat dissipation. Thermal vias under the pad are recommended to transfer heat to internal ground planes. Failure to implement this results in R_thJA degrading from 3.4 K/W (Q2) to >50 K/W, risking thermal runaway at >15 W dissipation.

Can BSC0924NDIATMA1 be used in a half-bridge configuration with shared source nodes?

No - Q1 and Q2 have electrically isolated source terminals (Pins 1/4 and 5/8), preventing direct series connection as a half-bridge. It is designed exclusively for synchronous buck use where Q1 and Q2 operate in complementary mode with independent source returns. For half-bridge applications, discrete high-side/low-side FETs or dedicated half-bridge ICs are required.

How does the integrated Schottky-like diode differ from a standard body diode?

The monolithic Schottky-like diode exhibits lower forward voltage (V_SD = 0.56 V at 3 A for Q2) and faster reverse recovery (Q_rr = 5 nC) than the parasitic body diode, reducing freewheeling loss and EMI during dead-time. Unlike discrete Schottkys, it shares the same die and thermal path, ensuring matched temperature behavior and eliminating bond-wire inductance.

Is BSC0924NDIATMA1 suitable for automotive applications?

While RoHS- and halogen-free compliant and qualified per JEDEC standards, BSC0924NDIATMA1 is not AEC-Q101 qualified. It lacks automotive-specific stress testing (e.g., -40 °C to +150 °C extended temperature cycling, ESD ≥ 2 kV HBM). For ADAS or infotainment systems, Infineon's AEC-Q101-qualified equivalents like DMTH3004LPSQ-13 should be selected instead.