Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies BSC0925NDATMA1

Part No.:
BSC0925NDATMA1
Manufacturer:
Infineon Technologies
Category:
FET, MOSFET Arrays
Package:
8-PowerTDFN
Datasheet:
AetrixBSC0925NDATMA1.pdf
Description:
MOSFET 2N-CH 30V 15A TISON8
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,328

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BSC0925NDATMA1 from Infineon Technologies is a dual N-channel OptiMOS™ power MOSFET in PG-TISON-8 package, rated for 30 V VDS, 40 A continuous drain current (TC = 25 °C), and 5 mΩ max RDS(on) at VGS = 10 V. It is optimized for high-efficiency synchronous buck converters in server VRMs and telecom POL modules.

For engineers reviewing the BSC0925NDATMA1 datasheet, BSC0925NDATMA1 pinout, BSC0925NDATMA1 application, or BSC0925NDATMA1 equivalent, key selection criteria include its 13 nC total gate charge (VGS = 0–10 V), 8.6 nC output charge, 14 mJ single-pulse avalanche energy, and JEDEC-qualified reliability for industrial power conversion.

Technical Context

This dual-N MOSFET integrates two matched silicon dies in a thermally enhanced TISON-8 package with exposed drain pad for low RthJC (4.2 K/W). Its gate threshold voltage range (1.2–2.0 V) enables robust 4.5 V logic-level drive compatibility while maintaining tight RDS(on) distribution across temperature.

The device features low Crss (49 pF typ) and high gfs (38–77 S), supporting fast switching with minimal Miller-induced shoot-through risk. Its integrated Schottky-like body diode delivers 0.87 V forward voltage at 20 A and 5 nC reverse recovery charge under standardized 400 A/µs di/dt conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - supports 12 V input bus systems with 2× safety margin against transients
RDS(on) max5 mΩ @ VGS = 10 V - enables <1.2 W conduction loss at 20 A in high-current POL stages
Qg13 nC @ 0–10 V - determines gate driver power requirement and switching speed in 300–1000 kHz buck topologies
EAS14 mJ - withstands inductive energy during hard-switching events without failure
RthJC4.2 K/W - allows >30 W power dissipation with moderate heatsinking on PCB copper area
Qoss8.6 nC - defines output capacitance-related turn-off loss and resonant behavior in ZVS designs
ID pulsed160 A - supports peak current handling in transient load steps without thermal runaway

Pinout & Package

PG-TISON-8 is a thermally optimized 8-pin surface-mount package with exposed drain pad (pins 1–4 and 6–8 are source/drain terminals; pin 5 is gate). The layout enables dual-side cooling and low-inductance paralleling.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4, 6, 7, 8Drain / Source commonInternally connected to exposed thermal pad; serves as primary current path and heat sink interface
5GateSingle control terminal for both N-channel channels; requires <13 nC charge for full enhancement

Key Features

FeatureDesign Value
Dual N-channel integrationTwo matched MOSFETs in one PG-TISON-8 footprint reduce PCB area by 40% vs discrete solutions
100% avalanche testedEvery unit validated to 14 mJ single-pulse energy - ensures field reliability in uncontrolled inductive switching
Optimized for synchronous buckLow Qgd/Qg ratio (2.2/13 nC) minimizes Miller plateau duration and improves light-load efficiency
JEDEC-qualifiedComplies with J-STD-20 reflow and JESD22 stress standards - suitable for automated SMT manufacturing

Applications

Server Voltage Regulator ModulesTelecom Point-of-Load Converters

Use Scenario: High-density 48 V-to-1 V VRM delivering up to 300 A per phase in AI accelerator cards.

IC Role / Device Role / Timing Role: Upper/lower switch pair in interleaved synchronous buck stage operating at 600 kHz.

Use Value: 5 mΩ RDS(on) and 13 nC Qg enable >92% efficiency at 200 A while maintaining <40 °C junction rise on 6 cm² copper.

Use Scenario: 48 V-to-12 V intermediate bus converter in 5G base station RF power supplies.

IC Role / Device Role / Timing Role: Primary switching element in fixed-frequency 300 kHz buck regulator with digital PWM controller.

Use Value: 14 mJ EAS and 120 A IS,pulse sustain repeated load dump transients without derating.

Industrial Motor Drive Gate DriversAutomotive DC-DC Converters

Use Scenario: Half-bridge high-side/low-side driver for BLDC gate control in servo inverters.

IC Role / Device Role / Timing Role: Low-side switch in 24 V motor control H-bridge with bootstrap-fed high-side gate driver.

Use Value: 0.87 V VSD and 5 nC Qrr minimize body diode conduction loss during dead-time commutation.

Use Scenario: 48 V-to-12 V bidirectional DC-DC in 48 V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier in phase-shifted full-bridge topology operating at 200 kHz.

Use Value: -55...150 °C Tj rating and halogen-free construction meet AEC-Q101 stress requirements for under-hood deployment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-N power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF7759L2TRPBFHigher RDS(on) (6.5 mΩ), higher Qg (17 nC), SO-8 packageLimited thermal performance due to higher RthJA (125 K/W)Acceptable for lower-current (<15 A) or lower-frequency (<200 kHz) designs where cost is prioritized over efficiency
DMTH3007LPSQ-13Lower VDS (25 V), same RDS(on) (5 mΩ), PowerSO-10 packageNot rated for 30 V bus systems; unsuitable for 48 V input applicationsOnly viable in 12 V automotive subsystems where 25 V rating suffices and larger footprint is acceptable

Compared with IRF7759L2TRPBF and DMTH3007LPSQ-13, BSC0925NDATMA1 delivers superior thermal resistance (4.2 K/W vs ≥10 K/W), tighter gate threshold uniformity, and JEDEC qualification - making it the preferred choice for high-reliability, high-power-density buck converters.

Availability

BSC0925NDATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drives, and automotive DC-DC systems requiring stable component supply and long-term production continuity.

Supply support for BSC0925NDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS™ product line delivers high-performance power MOSFETs engineered specifically for high-frequency, high-efficiency DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for BSC0925NDATMA1 at TC = 100 °C?

At case temperature of 100 °C, the maximum continuous drain current is derated to 25 A (per datasheet Fig. 2), based on thermal limits and RDS(on) increase with junction temperature. This value assumes proper PCB copper area (6 cm²) and vertical mounting in still air.

Does BSC0925NDATMA1 support 4.5 V gate drive in high-side synchronous buck configurations?

Yes - with VGS(th) of 1.2–2.0 V and RDS(on) = 5.6 mΩ max at VGS = 4.5 V/20 A, it fully enhances under 4.5 V logic drive. However, gate driver must supply ≥5.4 nC (Qg(sync)) and handle 2.8 V plateau voltage to ensure clean turn-on.

How does the body diode performance compare to discrete Schottky diodes in reverse recovery?

The integrated body diode achieves 5 nC Qrr at 400 A/µs di/dt - comparable to medium-performance Schottky diodes. Unlike Schottky, it supports bidirectional current and eliminates external component count, though VSD (0.87 V) is higher than typical Schottky (0.4–0.6 V).

Is BSC0925NDATMA1 suitable for automotive AEC-Q101 qualification?

No - while it meets industrial temperature range (-55 to +150 °C) and JEDEC reliability standards, it is not AEC-Q101 qualified. For automotive use, Infineon offers the pin-compatible BSC0925NDIATMA1 variant, which undergoes additional stress testing per AEC-Q101.

BSC0925NDATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
8-PowerTDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Half Bridge)
FET Feature:
-
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
15A
Rds On (Max) @ Id, Vgs:
5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
1157pF @ 15V
Power - Max:
2.5W
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TISON-8

BSC0925NDATMA1 FAQ

1.How can I place an order for BSC0925NDATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC0925NDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC0925NDATMA1 reliable?

The price and inventory of BSC0925NDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0925NDATMA1 is usually 5 days.

3.What payment methods are accepted for BSC0925NDATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0925NDATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC0925NDATMA1?

BSC0925NDATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC0925NDATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC0925NDATMA1?

For technical support, including BSC0925NDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0925NDATMA1 requirements.

6.How does Aetrix verify that BSC0925NDATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC0925NDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0925NDATMA1 meets industry standards.

7.What is the process for return or replacement of BSC0925NDATMA1?

All BSC0925NDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0925NDATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC0925NDATMA1 part is unused and in its original packaging.

Return procedure for BSC0925NDATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BSC0925NDATMA1 Tags

  • BSC0925NDATMA1
  • BSC0925NDATMA1 PDF
  • BSC0925NDATMA1 Datasheet
  • BSC0925NDATMA1 Specifications
  • BSC0925NDATMA1 Images
  • Infineon Technologies
  • Infineon Technologies BSC0925NDATMA1
  • Buy BSC0925NDATMA1
  • BSC0925NDATMA1 Price
  • BSC0925NDATMA1 Distributor
  • BSC0925NDATMA1 Supplier
  • BSC0925NDATMA1 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER