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Infineon Technologies BSC0993NDATMA1
- Part No.:
- BSC0993NDATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerTDFN
- Datasheet:
-
BSC0993NDATMA1.pdf
- Description:
- MOSFET 2N-CH 17A TISON8
- Quantity:
- Payment:
- Shipping:
Inventory:5,035
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Product details
Overview
BSC0993NDATMA1 from Infineon Technologies is a dual N-channel OptiMOS™ Power-MOSFET in PG-TISON-8 package, rated for 30 V VDS, 5 mΩ RDS(on) at VGS = 10 V, and 17 A continuous drain current - optimized for high-efficiency synchronous rectification and wireless power transmitter stages.
For engineers reviewing the BSC0993NDATMA1 datasheet, BSC0993NDATMA1 pinout, BSC0993NDATMA1 application, or BSC0993NDATMA1 equivalent, key selection criteria include low Qg (6.7 nC), low Qoss (8.6 nC), JEDEC-qualified thermal performance, and integrated reverse diode with 2.5 A continuous forward current.
Technical Context
This dual-N MOSFET integrates two matched silicon die in a single 5×6 mm thermally enhanced PG-TISON-8 package with exposed drain pad on bottom side. It supports synchronous buck/boost topologies where one device operates as high-side switch and the other as low-side synchronous rectifier.
Its gate threshold voltage (1.2–2.0 V) enables 3.3 V and 4.5 V logic-level drive compatibility, while 100% avalanche testing and RthJC = 4.2 K/W (bottom) ensure robustness in transient overloads and high-power density layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24 V nominal bus applications including USB PD and Qi wireless transmitters. |
| RDS(on) max | 5 mΩ @ VGS = 10 V - Enables <100 mW conduction loss at 7 A, critical for >95% efficiency in compact DC-DC stages. |
| ID continuous | 17 A @ TA = 25 °C - Sustained current capability with 2.5 W Ptot and 50 K/W RthJA on standard FR4 PCB. |
| Qg | 6.7 nC @ 0–4.5 V - Low gate charge reduces driver power and switching losses in high-frequency (>1 MHz) resonant converters. |
| Qoss | 8.6 nC @ VDD = 15 V - Minimizes turn-off energy and improves zero-voltage switching (ZVS) margin in soft-switched topologies. |
| VGS(th) | 1.2–2.0 V - Ensures reliable turn-on with 3.3 V microcontroller GPIO or dedicated gate drivers without level-shifting. |
| IS | 2.5 A continuous - Integrated body diode supports bidirectional current in half-bridge synchronous rectifiers without external diodes. |
Pinout & Package
PG-TISON-8 (5 mm × 6 mm × 0.9 mm) with exposed drain pad on bottom side for optimal thermal transfer to PCB copper. Pin 1 marked by dot; pins arranged in two rows of four.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Drain (D1/D2) | Internally connected to respective MOSFET drains and bottom thermal pad - must be soldered to large copper pour for thermal management. |
| 5 | Source 1 (S1) | Low-side source terminal for first MOSFET - referenced to ground in synchronous buck configurations. |
| 6 | Gate 1 (G1) | Control input for first MOSFET - requires low-inductance routing due to fast 3.8 ns rise time. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched OptiMOS die in single 5×6 mm package - eliminates layout mismatch and reduces board area vs discrete solutions. |
| Optimized for wireless charging | Low Qg/Qoss ratio and 100% avalanche tested - ensures ZVS reliability across Qi v1.3 transmitter operating conditions. |
| Superior thermal resistance | RthJC = 4.2 K/W (bottom) - enables >2× higher power density than comparable SO-8 MOSFETs in same footprint. |
| JEDEC-qualified reliability | Qualified per J-STD-20 (reflow) and JESD22 (stress) - validated for industrial temperature cycling and moisture sensitivity level 1. |
Applications
| Wireless Power Transmitter | USB PD 3.0 Buck Converter |
|---|---|
|
Use Scenario: 15 W Qi-compliant transmitter using half-bridge topology with 125 kHz resonant frequency. IC Role / Device Role: Dual MOSFET provides high-side switching and synchronous rectification in same stage, reducing component count and EMI. Use Value: 5 mΩ RDS(on) and 8.6 nC Qoss enable >92% system efficiency at full load with minimal heatsinking. |
Use Scenario: 20 V input to 5/9/15/20 V programmable output USB PD 3.0 buck converter for portable electronics. IC Role / Device Role: High-side switch and low-side synchronous rectifier in integrated power stage, driven by controller with 4.5 V gate output. Use Value: 1.2–2.0 V VGS(th) ensures full enhancement with 3.3 V logic, eliminating need for bootstrap or level-shift circuitry. |
| Industrial Motor Driver Half-Bridge | LED Driver Current Regulator |
|
Use Scenario: 24 V BLDC motor control module with PWM-driven half-bridge for fan or pump applications. IC Role / Device Role: Dual N-channel configuration allows direct gate drive of both switches without high-side floating supply. Use Value: 68 A pulsed current rating and 14 mJ EAS support stall protection and inductive kickback without external snubbers. |
Use Scenario: Constant-current LED driver for architectural lighting with 30 V string voltage and 1.5 A output. IC Role / Device Role: Low-side current-sense switch with integrated diode for freewheeling path during PWM off-time. Use Value: 2.5 A continuous diode current and 0.76 V typical VSD reduce conduction loss and thermal stress vs Schottky alternatives. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-N MOSFET power stage applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH7107TRPBF | RDS(on) = 6.1 mΩ @ 10 V; Qg = 10.2 nC; PG-TISON-8 package; no integrated diode rating specified. | Higher gate charge increases driver loss; lacks published IS and Qrr - less suitable for hard-commutated synchronous rectification. | Preferable only when lower cost outweighs efficiency trade-off in non-resonant topologies. |
| DMTH3016LPSQ-13 | RDS(on) = 4.8 mΩ @ 10 V; Qg = 8.5 nC; SO-8 package; RthJA = 62 K/W - 24% higher thermal resistance. | SO-8 limits power density; higher RthJA restricts use above 10 A continuous without forced air. | Acceptable for space-constrained but thermally relaxed designs where 5×6 mm footprint is unavailable. |
Compared with IRFH7107TRPBF and DMTH3016LPSQ-13, BSC0993NDATMA1 delivers superior thermal performance (RthJC = 4.2 K/W), lowest Qoss (8.6 nC), and JEDEC-qualified reliability - making it optimal for high-efficiency, high-density wireless charging and USB PD power stages.
Availability
BSC0993NDATMA1 is available at Aetrix Electronics and suitable for wireless power transmitters, USB PD 3.0 converters, and industrial motor driver half-bridges requiring stable component supply and long-term production continuity.
Supply support for BSC0993NDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949.
BSC0993NDATMA1 belongs to the OptiMOS™ Power-MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in consumer wireless charging and portable power delivery systems.
FAQ
What is the maximum junction temperature for continuous operation?
The BSC0993NDATMA1 has a maximum operating junction temperature of 150 °C, validated per JEDEC JESD22-A103. Derating begins at TA > 25 °C per the thermal curves in Figure 2 of the datasheet, with 17 A ID limited to 100 °C ambient when mounted on 6 cm² copper area.
Does this device support 3.3 V gate drive in practice?
Yes - with VGS(th) ranging from 1.2 V to 2.0 V and RDS(on) = 7 mΩ typ. at VGS = 4.5 V, the device fully enhances under 3.3 V logic drive in applications where 10–15% higher conduction loss is acceptable, such as low-duty-cycle wireless charging bursts.
How is the PG-TISON-8 package thermally optimized compared to SO-8?
The PG-TISON-8 uses an exposed drain pad on the bottom surface, achieving RthJC = 4.2 K/W (vs ~10 K/W for SO-8), and allows direct thermal coupling to inner-layer or bottom-side copper pours - enabling up to 2.5× higher power dissipation in the same PCB footprint.
Is the internal body diode suitable for synchronous rectification?
Yes - the integrated diode is characterized with 2.5 A continuous forward current (IS) and 5 nC reverse recovery charge (Qrr) at dI/dt = 400 A/µs, making it suitable for synchronous rectification in buck, boost, and half-bridge topologies up to 1 MHz switching frequency.
BSC0993NDATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta)
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- Power - Max:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TISON-8
BSC0993NDATMA1 FAQ
1.How can I place an order for BSC0993NDATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSC0993NDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSC0993NDATMA1 reliable?
The price and inventory of BSC0993NDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC0993NDATMA1 is usually 5 days.
3.What payment methods are accepted for BSC0993NDATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC0993NDATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSC0993NDATMA1?
BSC0993NDATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSC0993NDATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSC0993NDATMA1?
For technical support, including BSC0993NDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC0993NDATMA1 requirements.
6.How does Aetrix verify that BSC0993NDATMA1 is sourced from the original manufacturer or authorized distributors?
All BSC0993NDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC0993NDATMA1 meets industry standards.
7.What is the process for return or replacement of BSC0993NDATMA1?
All BSC0993NDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC0993NDATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSC0993NDATMA1 part is unused and in its original packaging.
Return procedure for BSC0993NDATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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