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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC120N12LSGATMA1

Name: BSC120N12LSGATMA1
Brand: Infineon Technologies
SKU: BSC120N12LSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC120N12LSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC120N12LSGATMA1.pdf

Description:: TRENCH >=100V PG-TDSON-8

Quantity:: RFQ Add To RFQ list

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Inventory:2,427

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Product details

Overview

BSC120N12LSGATMA1 from Infineon Technologies is an N-channel logic-level enhancement-mode MOSFET in SuperSO8 (PG-TDSON-8) package, rated for 120 V V_DS, 12 mΩ R_DS(on) at V_GS = 10 V, and 68 A continuous drain current at T_C = 25 °C. It features low Q_G (51 nC) and Q_oss (51 nC), optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the BSC120N12LSGATMA1 datasheet, BSC120N12LSGATMA1 pinout, BSC120N12LSGATMA1 application, or BSC120N12LSGATMA1 equivalent, key selection criteria include its 12 mΩ on-resistance at 4.5 V gate drive, 150 °C maximum junction temperature, JEDEC-qualified industrial reliability, and SuperSO8 thermal performance with R_thJC = 0.64 °C/W (bottom side).

Technical Context

This OptiMOSTM 2 device uses trench-gate silicon technology to achieve a low gate charge × R_DS(on) figure-of-merit (FOM), enabling efficient switching at frequencies up to several hundred kHz. Its logic-level gate threshold (V_GS(th) = 1.2–2.4 V) ensures full enhancement with standard 3.3 V or 5 V microcontroller outputs.

The integrated body diode exhibits fast reverse recovery (t_rr = 85 ns, Q_rr = 220 nC) and low forward voltage (V_SD = 0.87 V typ. at 34 A), supporting bidirectional current handling in buck-boost and LLC resonant topologies without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	120 V - supports 48 V input bus designs with 2.5× voltage margin for transient clamping
R_DS(on) max	12 mΩ at V_GS = 10 V - enables <1.5 W conduction loss at 35 A in 12 V output rails
I_D continuous	68 A at T_C = 25 °C - delivers high power density in compact 5 mm × 6 mm footprint
Q_G	51 nC - reduces gate driver power demand and switching losses in high-frequency operation
t_rr	85 ns - minimizes dead-time-induced shoot-through risk in synchronous rectifier configurations
T_j max	150 °C - qualified for industrial ambient environments up to 85 °C with derating
R_thJC	0.64 °C/W (bottom) - enables direct thermal coupling to heatsink via exposed drain pad

Pinout & Package

Package: PG-TDSON-8 (SuperSO8), 5.0 mm × 6.0 mm × 1.25 mm, with thermally enhanced exposed drain pad on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8 (Drain)	Power Drain Connection	Internally connected to exposed copper pad; primary heat path and high-current return path
6 (Gate)	Control Input	Logic-level compatible; requires <2.4 V to turn on, driven directly by MCU GPIO or dedicated gate driver
S (Source)	Reference Node	Pins 1–3 are source terminals; used for Kelvin sensing or low-inductance source return routing

Key Features

Feature	Design Value
N-channel logic-level gate	Turns fully on at V_GS ≥ 4.5 V - eliminates need for level-shifting in 3.3 V control systems
Low R_DS(on) × Q_G FOM	~612 mΩ·nC - balances conduction and switching losses for optimal efficiency at 300–500 kHz
JEDEC industrial qualification	Fully qualified per JESD47 - ensures reliability in uncontrolled thermal environments over 10-year field life
Halogen-free & RoHS-compliant	Meets IEC61249-2-21 - supports environmentally regulated industrial and medical product certifications

Applications

Server VRM

Industrial DC-DC Converter

Use Scenario: High-efficiency 12 V → 1 V/100 A point-of-load regulation in dual-processor server motherboards.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; replaces Schottky diode to reduce conduction loss by >60 %.

Use Value: Achieves >94 % efficiency at full load due to 12 mΩ R_DS(on) and 85 ns t_rr, lowering thermal stress on PCB and heatsink.

Use Scenario: 48 V input isolated DC-DC module for programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology operating at 250 kHz.

Use Value: Low Q_G (51 nC) and fast switching (t_f = 6 ns) minimize driver losses and EMI generation across 150 °C operating range.

Telecom Rectifier

Motor Drive Half-Bridge

Use Scenario: Secondary-side synchronous rectification in 3 kW telecom rectifier (–48 V output).

IC Role / Device Role / Timing Role: Low-side switch in center-tapped transformer configuration with adaptive gate timing.

Use Value: 79 A I_S rating and 0.87 V V_SD enable high-current reverse diode conduction during dead time without external freewheeling path.

Use Scenario: Half-bridge leg in 24 V BLDC motor drive for automated guided vehicle (AGV) traction control.

IC Role / Device Role / Timing Role: High-side and low-side switch in 20 kHz PWM inverter stage with bootstrap gate drive.

Use Value: Logic-level gate allows direct drive from 3.3 V MCU timers; 150 °C T_j rating sustains operation under sealed enclosure thermal conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL120N12F7	R_DS(on) = 11.5 mΩ @ 10 V; Q_G = 45 nC; same SuperSO8 package	Lower gate charge improves switching efficiency above 400 kHz but slightly reduced avalanche energy (E_AS = 120 mJ vs. 155 mJ)	Prefer for ultra-high-frequency SMPS where gate drive loss dominates; verify E_AS margin in inductive load switching.
IRF7470PBF	R_DS(on) = 13.5 mΩ @ 10 V; Q_G = 58 nC; SO-8 package (non-exposed pad)	Higher R_thJA (62 °C/W vs. 45 °C/W with cooling area) limits power density in space-constrained layouts	Acceptable for lower-power (<30 A) or cost-sensitive designs where thermal budget permits larger copper area.

Compared with STL120N12F7 and IRF7470PBF, BSC120N12LSGATMA1 offers the best balance of low R_DS(on), robust E_AS, and thermally optimized SuperSO8 packaging-making it preferred for industrial-grade 50–70 A synchronous rectifiers requiring long-term thermal stability.

Availability

BSC120N12LSGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifiers requiring stable component supply, JEDEC-qualified reliability, and high thermal performance in compact footprints.

Supply support for BSC120N12LSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 2 family-designed specifically for high-efficiency, high-reliability power conversion in industrial and computing applications where thermal robustness and logic-level gate drive are critical.

FAQ

What is the maximum allowable gate-source voltage for BSC120N12LSGATMA1?

The absolute maximum V_GS is ±20 V, with recommended operating range of –12 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. The device features built-in gate protection diodes, but external Zener clamping at 12 V is advised for noisy industrial environments to prevent spurious turn-on.

Can BSC120N12LSGATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (R_DS(on) increases with junction temperature) enables inherent current sharing. For reliable paralleling, match gate drive loop inductance and use Kelvin source connections. Derate total current by 15 % versus single-device rating to account for layout asymmetry and thermal coupling.

Is the exposed drain pad electrically isolated from other pins?

No-the exposed drain pad is internally connected to pins 1, 2, 3, 4, 5, 7, and 8 and forms the primary drain terminal. It must be soldered to a large copper pour tied to the system ground or negative rail. Thermal vias beneath the pad are required for effective heat transfer; electrical isolation is not possible without custom board-level insulation.

Does BSC120N12LSGATMA1 support 3.3 V logic-level gate drive across temperature?

At T_j = 25 °C, V_GS(th) ranges from 1.2 V to 2.4 V, allowing reliable turn-on with 3.3 V drive. However, V_GS(th) decreases with rising temperature (down to ~1.0 V at 150 °C), so gate drive must maintain ≥3.0 V minimum to ensure full enhancement and avoid linear-mode operation under hot conditions.

BSC120N12LSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 120 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta), 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 72µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4900 pF @ 60 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8

BSC120N12LSGATMA1 FAQ

1.How can I place an order for BSC120N12LSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC120N12LSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC120N12LSGATMA1 reliable?

The price and inventory of BSC120N12LSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC120N12LSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC120N12LSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC120N12LSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC120N12LSGATMA1?

BSC120N12LSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC120N12LSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC120N12LSGATMA1?

For technical support, including BSC120N12LSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC120N12LSGATMA1 requirements.

6.How does Aetrix verify that BSC120N12LSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC120N12LSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC120N12LSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC120N12LSGATMA1?

All BSC120N12LSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC120N12LSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC120N12LSGATMA1 part is unused and in its original packaging.

Return procedure for BSC120N12LSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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