Infineon Technologies BSC150N03LD

Overview

BSC150N03LD G from Infineon Technologies is a dual N-channel logic-level power MOSFET in PG-TDSON-8 package, rated for 30 V V_DS, 20 A continuous drain current at T_C = 25 °C, and 15 mΩ max R_DS(on) at V_GS = 10 V. It is optimized for high-efficiency DC/DC converters and synchronous rectification in SMPS.

For engineers reviewing the BSC150N03LD G datasheet, BSC150N03LD G pinout, BSC150N03LD G application, or BSC150N03LD G equivalent, key selection criteria include its 4.9 K/W junction-to-case thermal resistance, 100% avalanche-tested ruggedness, low gate charge (Q_g = 4.8–6.4 nC), and dual-channel layout enabling compact half-bridge or synchronous FET configurations.

Technical Context

This dual N-channel MOSFET integrates two matched silicon die in a single thermally enhanced PG-TDSON-8 package with exposed drain pad. Its logic-level gate drive (V_GS(th) = 1–2.2 V) enables direct interfacing with 3.3 V and 5 V controllers, while the low R_DS(on) × Q_g figure-of-merit (FOM) minimizes conduction and switching losses in high-frequency (<1 MHz) topologies.

The device features integrated body diodes with low V_SD (0.93–1.1 V @ 20 A) and controlled Q_rr (≤10 nC), supporting zero-voltage switching (ZVS) and synchronous rectification. Thermal performance is validated via JEDEC-compliant transient impedance curves and 100% single-pulse avalanche testing per IEC 61131-2.

Key Specifications

Pinout & Package

Package: PG-TDSON-8 (dual-channel, exposed drain thermal pad, 5 mm × 6 mm footprint). Pin 1–4 and 5–8 form two independent N-channel MOSFETs sharing common source terminals on pins 3/4 and 7/8 respectively; drain terminals are tied to the bottom-side thermal pad (electrically connected to pins 1, 2, 5, 6).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.

Compared with STL220N3LLH6 and DMTH3007LPSQ-13, BSC150N03LD G uniquely delivers matched dual-channel operation, verified avalanche ruggedness, and JEDEC qualification-making it optimal for space-constrained, high-reliability DC/DC and motor-control applications requiring coordinated switching and fault tolerance.

Availability

BSC150N03LD G is available at Aetrix Electronics and suitable for server VRM power stages, USB-C PD 100 W adapters, and industrial PLC I/O modules requiring stable component supply across multi-year production cycles.

Supply support for BSC150N03LD G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The OptiMOS™3 product line targets high-efficiency power conversion in computing, communications, and automotive systems, emphasizing low R_DS(on), fast switching, and ruggedness for demanding SMPS and motor-drive applications.

FAQ

What is the maximum continuous drain current for each channel at 100 °C case temperature?

Each channel supports 8 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PG-TDSON-8 package and ensures safe operation under sustained high-temperature conditions without exceeding junction temperature limits.

Does BSC150N03LD G support synchronous rectification in LLC resonant converters?

Yes-its low Q_rr (≤10 nC), fast t_f (2.0 ns), and low V_SD (0.93–1.1 V) enable efficient synchronous rectification in LLC topologies. The dual-channel layout allows independent gate timing control, critical for precise dead-time management and ZVS optimization in high-frequency resonant designs.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is electrically connected to pins 1, 2, 5, and 6 (both drain terminals) and must be soldered to a dedicated, non-grounded copper pour. It is not isolated and serves as the primary current and thermal path; improper grounding will cause short circuits or thermal failure.

What is the gate plateau voltage and why does it matter for drive circuit design?

The gate plateau voltage is 3.4 V, measured during the Miller region of turn-on. This value determines the minimum gate drive voltage needed to sustain reliable conduction and influences gate resistor selection to balance switching speed and EMI. Driving below this level risks incomplete turn-on and excessive R_DS(on)-related heating.