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Infineon Technologies BSC150N03LDGATMA1
- Part No.:
- BSC150N03LDGATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
BSC150N03LDGATMA1.pdf
- Description:
- MOSFET 2N-CH 30V 8A 8TDSON
- Quantity:
- Payment:
- Shipping:
Inventory:46,097
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Product details
Overview
BSC150N03LDGATMA1 from Infineon Technologies is a dual N-channel logic-level MOSFET in PG-TDSON-8 package, optimized for high-efficiency DC/DC converters and SMPS. It delivers 20 A continuous drain current at VGS = 10 V, 15 mΩ max RDS(on), and 4.9 K/W junction-to-case thermal resistance - enabling compact, thermally robust synchronous buck stages in server VRMs and POL modules.
For engineers reviewing the BSC150N03LDGATMA1 datasheet, BSC150N03LDGATMA1 pinout, BSC150N03LDGATMA1 application, or BSC150N03LDGATMA1 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 100% avalanche-rated ruggedness, low Qg (4.8–6.4 nC), and dual-die layout supporting interleaved or half-bridge configurations without external paralleling.
Technical Context
This dual MOSFET integrates two identical OptiMOS™3 N-channel silicon dies in a single PG-TDSON-8 leadless package with exposed thermal pad. Each channel supports independent gate control, with shared source terminals configured for common-source operation in synchronous rectification or dual-phase step-down topologies.
Its dynamic performance is defined by Ciss = 850–1100 pF, Coss = 350–470 pF, and td(on)/tr/td(off)/tf = 2.7 ns / 2.2 ns / 12 ns / 2.0 ns under standardized 15 V switching conditions - enabling >1 MHz operation while maintaining low switching losses in high-frequency POL converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Supports 12 V and 24 V input rails with margin for transient spikes in industrial and telecom power supplies. |
| RDS(on), max | 15 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 20 A, critical for high-current point-of-load regulation. |
| ID, cont | 20 A @ TC = 25 °C - Sustains full rated current with minimal derating when mounted on 6 cm² PCB copper area. |
| Qg | 4.8–6.4 nC - Reduces gate driver power demand and enables fast turn-on with low overshoot in high-speed switching. |
| RthJC | 4.9 K/W - Allows direct thermal coupling to heatsink or chassis, supporting >85% efficiency at 20 A in space-constrained designs. |
| EAS | 26 mJ - Withstands single-pulse inductive energy events without failure, enhancing reliability in hard-switched converters. |
| VGS(th) | 1.0–2.2 V - Ensures robust turn-on with standard 3.3 V or 5 V logic controllers, eliminating need for level shifters. |
Pinout & Package
PG-TDSON-8 (dual) package with bottom-side thermal pad and eight surface-mount terminals. Pin 1–4 and Pin 5–8 form two independent N-channel MOSFETs sharing Source (S1/S2) and Drain (D1/D2) connections per channel; Gate terminals are isolated (G1, G2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G1 | Gate of Channel 1 | Independent control input for first MOSFET; requires dedicated gate resistor and driver path. |
| S1 | Source of Channel 1 | Common return node for Channel 1; electrically tied to thermal pad for low-inductance grounding. |
| D1 | Drain of Channel 1 | High-side or low-side switching node; connected to PCB copper pour for thermal and current handling. |
| G2 | Gate of Channel 2 | Isolated gate input for second MOSFET; enables phase-shifted or complementary drive schemes. |
| S2 | Source of Channel 2 | Separate source terminal allowing independent source referencing or Kelvin sensing in precision applications. |
| D2 | Drain of Channel 2 | Second power switching node; supports dual-phase interleaving or redundant output paths. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel integration | Two matched OptiMOS™3 dies in one PG-TDSON-8 footprint reduce board area by ~40% vs discrete solutions. |
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, compatible with microcontroller GPIOs and low-voltage PWM controllers. |
| 100% avalanche tested | Each unit validated for single-pulse EAS = 26 mJ, ensuring robustness against inductive kickback in flyback or buck-boost stages. |
| Low gate charge × RDS(on) FOM | Qg × RDS(on) ≈ 72–96 mΩ·nC - benchmark figure-of-merit for high-frequency, high-efficiency switching. |
| Halogen-free & RoHS | Complies with IEC61249-2-21 and EU RoHS Directive, supporting environmentally regulated industrial and medical deployments. |
Applications
| Server Voltage Regulator Modules | Telecom DC/DC Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converters delivering 0.8–1.8 V at up to 120 A to CPU/GPU cores in rack-mounted servers. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing discrete pairs; each channel handles one phase leg with independent gate timing. Use Value: 15 mΩ RDS(on) and 4.9 K/W RthJC enable >92% peak efficiency at 20 A per phase while minimizing thermal hotspots. | Use Scenario: 48 V to 12 V intermediate bus converters in 5G base station power shelves with strict EMI and efficiency targets. IC Role / Device Role / Timing Role: Primary-side high-side switch and secondary-side synchronous rectifier in active-clamp forward or LLC resonant topologies. Use Value: Low Coss (350–470 pF) and fast tf (2.0 ns) reduce switching losses and improve zero-voltage switching (ZVS) range. |
| Industrial Motor Drive Inverters | Automotive ADAS Power Supplies |
Use Scenario: 24 V input H-bridge drivers for BLDC fan and pump controllers requiring fault-tolerant, high-reliability power stages. IC Role / Device Role / Timing Role: Half-bridge upper/lower switches with integrated body diodes; operated in 6-step commutation with dead-time control. Use Value: 100% avalanche rating and -55 °C to +150 °C operating range ensure survival during motor stall or short-circuit events. | Use Scenario: Compact 12 V to 3.3 V/5 V power supplies for radar sensors and camera modules in autonomous driving ECUs. IC Role / Device Role / Timing Role: Dual-channel POL switch in cascaded buck architecture; one channel regulates core voltage, the other powers I/O peripherals. Use Value: Logic-level VGS(th) (1.0–2.2 V) allows direct interface with automotive-grade 3.3 V MCUs, eliminating level-shifting components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7341TRPBF | Higher RDS(on) (28 mΩ), higher Qg (16 nC), SO-8 package with inferior thermal resistance (RthJC = 62 K/W). | Limited to ≤5 A continuous operation; unsuitable for high-current POL due to thermal constraints. | Select only for cost-sensitive, low-power (<10 W) applications where board space is not constrained. |
| DMN3025LSD-13 | Single-channel dual-MOSFET in SO-8; RDS(on) = 2.5 mΩ but rated only for 12 V VDS; no avalanche rating. | Not suitable for 24/48 V systems; lacks ruggedness for motor drive or telecom surge environments. | Prefer only in low-voltage, non-avalanche-critical consumer power banks or USB-C PD adapters. |
Compared with IRF7341TRPBF and DMN3025LSD-13, BSC150N03LDGATMA1 offers superior thermal performance, lower conduction loss, and guaranteed avalanche capability - making it the only option qualified for high-reliability, high-current industrial and telecom DC/DC converters.
Availability
BSC150N03LDGATMA1 is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom DC/DC converters, and industrial motor drive inverters requiring stable component supply across extended production lifecycles.
Supply support for BSC150N03LDGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.
The OptiMOS™3 product line delivers high-performance, logic-level power MOSFETs engineered specifically for high-frequency, high-efficiency DC/DC conversion in datacenter, telecom, and industrial power systems.
FAQ
What is the maximum continuous drain current for each channel at 100 °C case temperature?
Each channel supports 8 A continuous drain current at TC = 100 °C and VGS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced heat dissipation at elevated temperatures, and assumes proper PCB copper area (6 cm²) and vertical mounting in still air.
Does BSC150N03LDGATMA1 support synchronous rectification in buck converters?
Yes - its low RDS(on) (15 mΩ max), fast switching times (tr = 2.2 ns, tf = 2.0 ns), and logic-level gate threshold (1.0–2.2 V) make it ideal for synchronous rectification. The dual-channel configuration allows independent control of high-side and low-side switches in a single buck stage.
Is the thermal pad electrically isolated from the drains in the PG-TDSON-8 package?
No - the exposed thermal pad is internally connected to the drain terminals (D1 and D2). It must be soldered to a PCB copper pour tied to the drain net to ensure both thermal performance and electrical integrity; floating or grounded pads will compromise functionality and reliability.
Can BSC150N03LDGATMA1 be used in linear mode applications such as electronic loads?
No - this device is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability, and the absence of SOA graphs beyond single-pulse conditions indicates it is not characterized or rated for sustained linear operation or analog current regulation.
BSC150N03LDGATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 8A
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1100pF @ 15V
- Power - Max:
- 26W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-4
BSC150N03LDGATMA1 FAQ
1.How can I place an order for BSC150N03LDGATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSC150N03LDGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSC150N03LDGATMA1 reliable?
The price and inventory of BSC150N03LDGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC150N03LDGATMA1 is usually 5 days.
3.What payment methods are accepted for BSC150N03LDGATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC150N03LDGATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSC150N03LDGATMA1?
BSC150N03LDGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSC150N03LDGATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSC150N03LDGATMA1?
For technical support, including BSC150N03LDGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC150N03LDGATMA1 requirements.
6.How does Aetrix verify that BSC150N03LDGATMA1 is sourced from the original manufacturer or authorized distributors?
All BSC150N03LDGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC150N03LDGATMA1 meets industry standards.
7.What is the process for return or replacement of BSC150N03LDGATMA1?
All BSC150N03LDGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC150N03LDGATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSC150N03LDGATMA1 part is unused and in its original packaging.
Return procedure for BSC150N03LDGATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSC150N03LDGATMA1 Tags
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SSM6N7002KFU,LF
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2N7002DW-7-F
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SSM6L56FE,LM
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SSM6N37FU,LF
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2N7002DWH6327XTSA1
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2N7002BKS,115
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DMG1016UDW-7
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DMG6602SVT-7
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