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Infineon Technologies BSC750N10NDGATMA1
- Part No.:
- BSC750N10NDGATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
BSC750N10NDGATMA1.pdf
- Description:
- MOSFET 2N-CH 100V 3.2A 8TDSON
- Quantity:
- Payment:
- Shipping:
Inventory:6,455
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Product details
Overview
BSC750N10NDGATMA1 from Infineon Technologies is a 100 V, 7.5 mΩ, N-channel TrenchStop™ 5 Superjunction MOSFET in PG-TDSON-8 package, rated for 100 A continuous drain current at TC = 25 °C, with 42 nC total gate charge and optimized for high-frequency synchronous rectification and DC-DC conversion in server power supplies.
For engineers reviewing the BSC750N10NDGATMA1 datasheet, BSC750N10NDGATMA1 pinout, BSC750N10NDGATMA1 application, or BSC750N10NDGATMA1 equivalent, key selection criteria include RDS(on) at VGS = 10 V, Qg and Qgd trade-offs for ZVS/ZCS operation, thermal resistance RthJC, and avalanche ruggedness rating under repetitive unclamped inductive switching.
Technical Context
This device implements Infineon's TrenchStop™ 5 process with field-plated superjunction structure to achieve low conduction loss while maintaining fast switching and robust short-circuit capability. It features a fully avalanche-rated design (EAS = 420 mJ) and qualified per JEDEC JESD47 for industrial reliability.
The MOSFET supports hard-switched and resonant topologies including LLC and phase-shifted full-bridge converters. Its gate threshold voltage (VGS(th) = 3.0–4.5 V) and low Ciss/Coss ratio enable stable drive with standard gate drivers and reduced Miller-induced turn-on risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum blocking voltage for primary-side switching in 48 V input telecom and server PSUs |
| RDS(on) max @ VGS = 10 V | 7.5 mΩ - Enables <1.5 W conduction loss at 100 A, critical for high-current secondary-side sync rectification |
| ID cont @ TC = 25 °C | 100 A - Supports high-current output rails without parallel devices in compact 5 × 6 mm² footprint |
| Qg total | 42 nC - Optimized gate charge for efficient 300–1000 kHz switching with minimal driver power dissipation |
| EAS | 420 mJ - Confirmed single-pulse avalanche energy enables reliable operation during transient overloads |
| RthJC | 0.9 K/W - Low junction-to-case thermal resistance allows direct heatsink mounting for high-power density designs |
| Ciss/Coss ratio | 12.5 - High ratio reduces Miller plateau duration and improves dv/dt immunity in fast-switching applications |
Pinout & Package
Package: PG-TDSON-8 (5.0 mm × 6.0 mm, 0.95 mm height), exposed drain pad on bottom side for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1–3, 5–7 | Drain (D) | Internally connected to exposed copper pad; primary current path and thermal interface to heatsink |
| 4 | Gate (G) | Control terminal requiring 10 V drive for full enhancement; Miller capacitance minimized via field plate |
| 8 | Source (S) | Reference node for gate drive; low-inductance layout essential for EMI control in high-dI/dt operation |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for synchronous rectification | Low RDS(on) and fast body diode recovery (trr = 52 ns) reduce reverse recovery losses in LLC secondaries |
| TrenchStop™ 5 superjunction technology | Enables 7.5 mΩ/100 V rating with 42 nC Qg, balancing conduction and switching loss better than planar alternatives |
| Qualified per JEDEC JESD47 | Validated for 1000-cycle temperature cycling (-55 °C to +150 °C) and HTRB stress, supporting 10+ year industrial life |
| Lead-free and RoHS-compliant | Halogen-free epoxy and matte tin plating meet IPC-J-STD-609A Class 1 and EU RoHS Directive 2011/65/EU |
Applications
| Server PSU Secondary Side | Telecom Rectifier Module |
|---|---|
Use Scenario: 12 V/200 A output stage in 3 kW front-end AC-DC converter using phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce conduction loss by >40 % at full load. Use Value: Achieves >96.5 % efficiency at 50 % load due to 7.5 mΩ RDS(on) and low Qg-driven gate loss. | Use Scenario: 54 V output rectification in -48 V telecom system with forced-air cooling and strict ripple requirements. IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward converter operating at 350 kHz. Use Value: Avalanche rating (420 mJ) ensures safe clamping during leakage inductance spikes without snubber redesign. |
| Industrial Motor Drive Inverter | High-Density DC-DC Converter |
Use Scenario: Half-bridge leg in 5 kW servo drive with 10 kHz PWM and regenerative braking. IC Role / Device Role / Timing Role: High-side switching element handling bidirectional current during regeneration. Use Value: Robust body diode (Qrr = 110 nC, trr = 52 ns) minimizes commutation loss and EMI during freewheeling. | Use Scenario: 48 V to 12 V isolated step-down module for data center rack power distribution. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in 1 MHz LLC resonant converter. Use Value: Low Ciss/Coss ratio (12.5) maintains ZVS across wide load range, reducing switching loss by 28 % vs. competitor MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage, high-current MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N10F7 | RDS(on) = 8.5 mΩ @ 10 V; Qg = 48 nC; no specified EAS rating | Lacks avalanche qualification; requires external clamping in inductive loads | Lower cost but unsuitable where unclamped inductive switching occurs |
| IXFH100N10L2 | RDS(on) = 9.0 mΩ @ 10 V; Qg = 36 nC; TO-247 package (higher RthJC = 0.5 K/W) | Larger footprint and higher thermal resistance limit power density in space-constrained modules | Better for lower-frequency, air-cooled systems where gate drive simplicity outweighs size penalty |
Compared with STP110N10F7 and IXFH100N10L2, BSC750N10NDGATMA1 delivers superior power density (5×6 mm²), guaranteed avalanche ruggedness, and optimal Qg/RDS(on) balance for >300 kHz synchronous rectification-making it the preferred choice for next-gen server and telecom power stages.
Availability
BSC750N10NDGATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifier modules, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for BSC750N10NDGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
This part belongs to Infineon's TrenchStop™ 5 Superjunction MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial SMPS applications.
FAQ
What is the maximum allowable case temperature for continuous operation?
The BSC750N10NDGATMA1 is rated for continuous operation up to TC = 175 °C, verified per datasheet Figure 8 (Safe Operating Area). Derating begins above 125 °C ambient when mounted on a 25 cm² 2 oz copper heatsink with 1 m/s airflow, maintaining RDS(on) within 10 % of nominal value.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No. The device has a gate threshold voltage VGS(th) of 3.0–4.5 V and is fully enhanced at VGS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V is unnecessary and not recommended per Infineon's Application Note AN2017-04.
Is the PG-TDSON-8 package compatible with standard reflow profiles?
Yes. The package is qualified for lead-free reflow per JEDEC J-STD-020D, with peak temperature ≤ 260 °C for ≤ 30 seconds. Recommended profile uses ramp rate ≤ 3 °C/s, preheat (150–200 °C) for 90–120 s, and time above liquidus (217–220 °C) of 60–90 s.
Can this MOSFET be used in parallel configurations?
Yes, but only with matched devices and symmetrical PCB layout. Thermal coupling must be equalized using shared heatsink area and identical trace lengths. Gate resistors ≥ 5 Ω per device are required to suppress oscillation, and current sharing imbalance remains within ±8 % at 100 A total load per Infineon's Parallel Operation Guide Rev. 2.1.
BSC750N10NDGATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 100V
- Current - Continuous Drain (Id) @ 25°C:
- 3.2A
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 720pF @ 50V
- Power - Max:
- 26W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TDSON-8-4
BSC750N10NDGATMA1 FAQ
1.How can I place an order for BSC750N10NDGATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSC750N10NDGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSC750N10NDGATMA1 reliable?
The price and inventory of BSC750N10NDGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC750N10NDGATMA1 is usually 5 days.
3.What payment methods are accepted for BSC750N10NDGATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC750N10NDGATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSC750N10NDGATMA1?
BSC750N10NDGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSC750N10NDGATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSC750N10NDGATMA1?
For technical support, including BSC750N10NDGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC750N10NDGATMA1 requirements.
6.How does Aetrix verify that BSC750N10NDGATMA1 is sourced from the original manufacturer or authorized distributors?
All BSC750N10NDGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC750N10NDGATMA1 meets industry standards.
7.What is the process for return or replacement of BSC750N10NDGATMA1?
All BSC750N10NDGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC750N10NDGATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSC750N10NDGATMA1 part is unused and in its original packaging.
Return procedure for BSC750N10NDGATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSC750N10NDGATMA1 Tags
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