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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Infineon Technologies BSD223P

Name: BSD223P
Brand: Infineon Technologies
SKU: BSD223P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSD223P

Manufacturer:: Infineon Technologies

Category:: FET, MOSFET Arrays

Package:: 6-VSSOP, SC-88, SOT-363

Datasheet:: BSD223P.pdf

Description:: MOSFET 2P-CH 20V 0.39A SOT363

Quantity:: RFQ Add To RFQ list

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Inventory:3,057

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Product details

Overview

BSD223P from Infineon Technologies is a dual P-channel enhancement-mode MOSFET in PG-SOT-363 package, rated for −20 V V_DS, 1.2 Ω R_DS(on) at −4.5 V V_GS, and −0.39 A continuous drain current. It features Super Logic Level gate drive (−2.5 V threshold), avalanche rating, and 150 °C operation-used in compact DC-DC load switches and battery protection circuits.

For engineers reviewing the BSD223P datasheet, BSD223P pinout, BSD223P application, or BSD223P equivalent, key selection criteria include logic-level gate compatibility, dual-channel integration in SOT-363, −20 V breakdown voltage, avalanche energy (1.4 mJ), and thermal resistance (R_thJA = 500 K/W).

Technical Context

This dual P-MOSFET integrates two identical enhancement-mode channels sharing a common source configuration in a 6-pin leaded package. Each channel supports independent gate control (pins 2/5), separate drains (pins 6/3), and shared source terminals (pins 1/4).

It delivers stable R_DS(on) down to −2.5 V V_GS (1.27–2.1 Ω), exhibits low gate charge (Q_g = −0.5–−0.62 nC), and maintains robust dv/dt immunity (−6 kV/µs) and reverse diode recovery (t_rr = 7.6–9.5 ns, Q_rr = 1.1–1.4 nC).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V - maximum blocking voltage for low-voltage P-channel switching
R_DS(on) @ −4.5 V	0.7–1.2 Ω - enables <100 mW conduction loss at −0.39 A
I_D cont.	−0.39 A @ T_A = 25 °C - suitable for sub-500 mA load switching
V_GS(th)	−0.6 to −1.2 V - logic-compatible turn-on with 2.5 V microcontroller outputs
E_AS	1.4 mJ - withstands single-pulse inductive energy without failure
dv/dt rating	−6 kV/µs - suppresses false triggering in noisy automotive environments
T_j max	+150 °C - qualified per AEC-Q101 for under-hood automotive use

Pinout & Package

Package: PG-SOT-363 (6-pin, leaded, surface-mount), footprint compatible with JEDEC MO-178AB. Thermal resistance R_thJA = 500 K/W (leaded), R_thJS = 180 K/W.

Pin/Terminal	Circuit Role	Design Meaning
1, 4	Source (common)	Shared source node for both MOSFETs; connects to system ground or high-side return path
2, 5	Gate	Independent gate inputs; enable individual channel control with standard logic levels
3, 6	Drain	Separate drain outputs; support dual independent loads or complementary switching

Key Features

Feature	Design Value
Dual P-channel integration	Two matched MOSFETs in one SOT-363 footprint-reduces PCB area vs. discrete solutions
Super Logic Level gate	V_GS(th) ≤ −1.2 V ensures full enhancement with 2.5 V I/O, eliminating level-shifting needs
Avalanche-rated	1.4 mJ single-pulse E_AS allows safe operation in inductive load switching without snubbers
AEC-Q101 qualified	Validated for automotive applications including body electronics and power management modules
Halogen-free construction	Complies with IEC61249-2-21 - supports RoHS-compliant and environmentally regulated designs

Applications

Automotive Body Control Module

USB-C Power Delivery Switching

Use Scenario: Controlling door lock actuators and interior lighting via 12 V supply rails.

IC Role / Device Role / Timing Role: Dual-channel high-side switch managing two independent 12 V loads with logic-level enable.

Use Value: −20 V rating and 150 °C operation ensure reliability in under-dash temperature environments.

Use Scenario: Enabling/disabling V_BUS paths in portable USB-C accessories with 5–20 V input range.

IC Role / Device Role / Timing Role: Compact dual P-MOSFET load switch providing reverse-current blocking and fast turn-off.

Use Value: Low R_DS(on) (0.7 Ω) minimizes voltage drop across 500 mA charging paths.

Smartphone Battery Protection

Industrial Sensor Node Power Gating

Use Scenario: Isolating backup battery from main PMIC during fault conditions or deep sleep.

IC Role / Device Role / Timing Role: Dual P-MOSFET configured as back-to-back switch for bidirectional overvoltage/overcurrent isolation.

Use Value: Avalanche rating and −6 kV/µs dv/dt immunity prevent latch-up during transient surges.

Use Scenario: Power-gating wireless sensor nodes (BLE/Zigbee) between measurement cycles to extend battery life.

IC Role / Device Role / Timing Role: Low-leakage (I_DSS ≤ −100 µA @ 150 °C) dual switch enabling ultra-low standby current.

Use Value: Gate threshold stability over temperature (−0.6 to −1.2 V) ensures consistent wake-up timing across −40 to +125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG6968UVT-7	Single-channel, lower R_DS(on) (0.45 Ω @ −4.5 V), same SOT-563 package	Requires two devices for dual functionality; higher layout density but no shared-source advantage	Select when lowest on-resistance is prioritized over integration and footprint savings
SI2301BDS-T1-GE3	Single P-MOSFET, SOT-23, R_DS(on) = 0.13 Ω @ −4.5 V, no avalanche rating	Lacks dual-channel capability and AEC-Q101 qualification; unsuitable for automotive or ruggedized systems	Choose only for cost-sensitive, non-automotive consumer applications with relaxed reliability requirements

Compared with DMG6968UVT-7 and SI2301BDS-T1-GE3, BSD223P uniquely delivers dual-channel integration, AEC-Q101 qualification, and guaranteed avalanche performance in a single PG-SOT-363 package-making it optimal for space-constrained, safety-aware automotive and industrial power switches.

Availability

BSD223P is available at Aetrix Electronics and suitable for automotive body control modules, USB-C power delivery switching, smartphone battery protection, and industrial sensor node power gating requiring stable component supply and long-term lifecycle support.

Supply support for BSD223P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

The OptiMOS™-P product line delivers logic-level, avalanche-rated P-channel MOSFETs optimized for high-efficiency, space-constrained power switching in automotive, computing, and portable electronics.

FAQ

What is the maximum junction temperature and thermal derating behavior of BSD223P?

The BSD223P is rated for T_j = −55 to +150 °C. Its continuous drain current derates linearly from −0.39 A at 25 °C ambient to −0.31 A at 70 °C, and its power dissipation drops from 0.25 W at 25 °C to near zero above 120 °C ambient, per the published P_tot vs. T_A curve.

Can BSD223P be used in back-to-back configuration for reverse-current blocking?

Yes-its dual P-channel structure with isolated gates and shared sources enables direct back-to-back connection (drains tied together) for true bidirectional blocking. The integrated design eliminates external routing complexity and ensures matched channel characteristics critical for balanced voltage sharing.

Is the BSD223P halogen-free and RoHS compliant?

Yes-the device is explicitly certified halogen-free per IEC61249-2-21 and complies with EU RoHS Directive 2011/65/EU. This is confirmed in the official datasheet revision 1.4, page 1, under environmental compliance statements.

What is the typical reverse diode forward voltage and recovery performance?

At −0.39 A and T_j = 25 °C, V_SD is −1.0 to −1.33 V. Reverse recovery time t_rr is 7.6–9.5 ns with Q_rr = 1.1–1.4 nC under V_R = −10 V, |I_F| = |I_D|, and di_F/dt = 100 A/µs-enabling efficient operation in synchronous rectification and flyback snubberless topologies.

BSD223P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 6-VSSOP, SC-88, SOT-363

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 P-Channel (Dual)

FET Feature:: Logic Level Gate

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 390mA

Rds On (Max) @ Id, Vgs:: 1.2Ohm @ 390mA, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 1.5µA

Gate Charge (Qg) (Max) @ Vgs:: 0.62nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 56pF @ 15V

Power - Max:: 250mW

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT363-PO

BSD223P FAQ

1.How can I place an order for BSD223P through Aetrix?

Please submit a Request for Quotation (RFQ) for BSD223P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSD223P reliable?

The price and inventory of BSD223P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSD223P is usually 5 days.

3.What payment methods are accepted for BSD223P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSD223P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSD223P?

BSD223P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSD223P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSD223P?

For technical support, including BSD223P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSD223P requirements.

6.How does Aetrix verify that BSD223P is sourced from the original manufacturer or authorized distributors?

All BSD223P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSD223P meets industry standards.

7.What is the process for return or replacement of BSD223P?

All BSD223P units undergo pre-shipment inspection (PSI). If there is an issue with BSD223P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSD223P part is unused and in its original packaging.

Return procedure for BSD223P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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