Infineon Technologies BSD223PH6327XTSA1

Overview

BSD223PH6327XTSA1 from Infineon Technologies is a dual P-channel enhancement-mode MOSFET in PG-SOT-363 package, rated for -20 V V_DS, 1.2 Ω R_DS(on) at -4.5 V V_GS, and -0.39 A continuous drain current. It features Super Logic Level gate drive (2.5 V rated), avalanche and dv/dt ruggedness, and AEC-Q101 qualification - used in automotive load switching and space-constrained DC-DC converter bias rails.

For engineers reviewing the BSD223PH6327XTSA1 datasheet, BSD223PH6327XTSA1 pinout, BSD223PH6327XTSA1 application, or BSD223PH6327XTSA1 equivalent, key selection criteria include dual-channel P-channel logic-level operation, -1.2 V typical V_GS(th), thermal robustness to 150°C, and SOT-363 footprint compatibility with high-density PCB layouts.

Technical Context

This dual MOSFET integrates two matched P-channel devices sharing a common source configuration in a single PG-SOT-363 package. Each channel supports independent gate control (pins 2/5), separate drain paths (pins 3/6), and shared source terminals (pins 1/4), enabling compact half-bridge or dual low-side switch topologies.

Its Super Logic Level design ensures full enhancement at V_GS = -2.5 V, with R_DS(on) of 1.27 Ω (typ) under that condition. Avalanche energy rating of 1.4 mJ and dv/dt immunity up to -6 kV/µs support reliable operation in inductive switching environments without external snubbers.

Key Specifications

Pinout & Package

Package: PG-SOT-363 (6-pin, 1.3 × 2.1 mm, 0.95 mm height), lead-free and halogen-free per IEC61249-2-21, qualified to AEC-Q101.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel logic-level MOSFET applications.

Compared with DMC2038LVT-7 and SI3483DV-T1-GE3, BSD223PH6327XTSA1 uniquely combines AEC-Q101 qualification, -2.5 V logic-level operation, and 1.4 mJ avalanche capability - making it the only option qualified for under-hood automotive switching with minimal gate drive overhead.

Availability

BSD223PH6327XTSA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial sensor signal conditioning, and USB-C power delivery load switching requiring stable component supply and long-term lifecycle assurance.

Supply support for BSD223PH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949.

The OptiMOS™-P product line delivers logic-level P-channel MOSFETs optimized for space-constrained, thermally demanding applications - especially automotive load switching and high-efficiency DC-DC bias circuits.

FAQ

What is the maximum continuous drain current per channel at 70°C ambient?

The maximum continuous drain current per channel is -0.31 A at T_A = 70°C, derated from -0.39 A at 25°C per the thermal curve on page 2 of the datasheet. This reflects the device's 500 K/W junction-to-ambient thermal resistance and 0.25 W total power dissipation limit.

Does BSD223PH6327XTSA1 support parallel operation of both channels?

Yes - both P-channel MOSFETs are electrically isolated with independent gates and drains, and share only the source terminals (pins 1 and 4). They can be paralleled for higher current if gate drive and layout symmetry ensure balanced current sharing, though R_DS(on) matching is not guaranteed beyond typical 10% variation.

Is the PG-SOT-363 package compatible with standard reflow profiles?

Yes - the package is qualified for lead-free reflow per JEDEC J-STD-020, with peak temperature up to 260°C. The datasheet specifies soldering conditions on page 8, including preheat, soak, and ramp rates aligned with IPC-7095 guidelines for small-outline transistor packages.

What is the reverse diode forward voltage at -0.39 A?

The reverse diode forward voltage (V_SD) is -1.0 to -1.33 V at I_F = -0.39 A and T_j = 25°C, as specified on page 3. This body diode is integrated into each MOSFET and supports freewheeling in inductive loads, though its V_F is higher than discrete Schottky diodes.