Infineon Technologies BSD235CH6327XTSA1
- Part No.:
- BSD235CH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BSD235CH6327XTSA1.pdf
- Description:
- MOSFET N/P-CH 20V 0.95A SOT363
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
BSD235CH6327XTSA1 from Infineon Technologies is a complementary dual-channel small-signal MOSFET pair (P+ N-channel) in PG-SOT-363 package, rated for ±20 V VDS, 0.95 A N-channel and −0.53 A P-channel continuous drain current at TA=25°C, with super logic-level gate drive (2.5 V threshold), avalanche-rated operation, and AEC-Q101 qualification for automotive use.
For engineers reviewing the BSD235CH6327XTSA1 datasheet, BSD235CH6327XTSA1 pinout, BSD235CH6327XTSA1 application, or BSD235CH6327XTSA1 equivalent, key selection criteria include complementary logic-level switching capability, low RDS(on) at 2.5 V gate drive (600 mΩ N / 2100 mΩ P), integrated back-to-back diode functionality, and thermally robust SOT-363 packaging for space-constrained DC-DC and load-switching designs.
Technical Context
This dual MOSFET integrates an N-channel and P-channel OptiMOS™-P 2 device in one monolithic SOT-363 package, enabling complementary half-bridge or load-switch topologies without external pairing. Its gate threshold voltages (−0.9 V typ P, +0.95 V typ N) ensure simultaneous turn-on under 2.5 V logic control, while matched dynamic parameters (e.g., tr/tf ≤ 5.0 ns / 3.6 ns) support precise timing in bidirectional signal routing.
The device features fully characterized avalanche energy ratings (1.4 mJ P / 1.6 mJ N), 100% lead-free RoHS/Halogen-free compliance per IEC61249-2-21, and thermal resistance RthJA = 250 K/W on minimal FR4 footprint - confirming suitability for thermally demanding automotive body electronics and industrial sensor interface modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS Rating | ±20 V - supports 12 V automotive rail and 5 V logic-compatible power domains without level shifting |
| RDS(on) @ VGS = ±2.5 V | 600 mΩ (N) / 2100 mΩ (P) - enables direct drive from microcontroller GPIOs in low-power load switches |
| ID Continuous (TA = 25°C) | 0.95 A (N) / −0.53 A (P) - sufficient for LED drivers, fan controllers, and sensor bias circuits |
| Avalanche Energy EAS | 1.6 mJ (N) / 1.4 mJ (P) - provides robustness against inductive switching transients in relay/actuator interfaces |
| Gate Threshold VGS(th) | −0.9 V (P) / +0.95 V (N) - ensures reliable enhancement-mode turn-on with 2.5 V logic supply |
| Thermal Resistance RthJA | 250 K/W - validated on 40 mm² FR4 PCB with 1 mm × 70 µm traces; defines derating curve for ambient-limited designs |
Pinout & Package
Package: PG-SOT-363 (6-pin, 2×3 array, 1.3 mm × 2.1 mm × 0.95 mm height), surface-mount, lead-free, halogen-free, tape-and-reel (3000 pcs/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | N-channel Source | Common source node for N-MOS; tied to ground or low-side return path in half-bridge |
| 2 | P-channel Drain | High-side output terminal; connects to load when P-MOS is active |
| 3 | N-channel Drain | Low-side output terminal; connects to load when N-MOS is active |
| 4 | P-channel Source | Common source node for P-MOS; typically tied to VCC or high-side rail |
| 5 | Gate (P-channel) | Control input for P-MOS; negative voltage relative to source required for turn-on |
| 6 | Gate (N-channel) | Control input for N-MOS; positive voltage relative to source required for turn-on |
Key Features
| Feature | Design Value |
|---|---|
| Complementary P+N Pair | Single-package integration eliminates layout mismatch and timing skew between channels |
| Super Logic-Level Drive | Guaranteed turn-on at 2.5 V VGS - compatible with 3.3 V and 2.5 V MCU I/O without gate drivers |
| AEC-Q101 Qualified | Validated for automotive temperature range (−55°C to +150°C) and mechanical stress requirements |
| Integrated Body Diodes | Back-to-back diodes enable bidirectional current flow in H-bridge or reverse-polarity protection |
| Low Gate Charge Qg | 0.34 nC (N) / −0.4 nC (P) - minimizes switching losses and driver power demand in PWM applications |
Applications
| Automotive Door Module | USB-C Port Power Switch |
|---|---|
Use Scenario: Controlling window lift motors and mirror actuators using bidirectional PWM signals. IC Role / Device Role / Timing Role: Complementary half-bridge switch providing direction and enable control with shared gate timing. Use Value: Eliminates discrete P/N pairing; reduces PCB area by 40% vs. dual-SOT-23 solution while maintaining 150°C junction rating. | Use Scenario: Enabling/disabling VBUS and CC line power paths in USB-C receptacles. IC Role / Device Role / Timing Role: Dual-channel load switch managing forward and reverse power delivery with independent gate control. Use Value: 2.5 V logic compatibility allows direct connection to USB PD controller GPIOs; avalanche rating protects against hot-plug transients. |
| Industrial Sensor Interface | Smart Lighting Dimmer |
Use Scenario: Isolating and powering analog sensor rails (e.g., pressure, temp) in PLC I/O modules. IC Role / Device Role / Timing Role: High-side (P-MOS) and low-side (N-MOS) switch controlling sensor excitation and return paths. Use Value: Matched RDS(on) temperature coefficients ensure stable current sourcing over −40°C to +125°C operating range. | Use Scenario: Driving multiple LED strings with phase-cut or PWM dimming in smart bulbs. IC Role / Device Role / Timing Role: Low-side N-MOS switch for PWM current control; P-MOS for reverse-current blocking during off-cycle. Use Value: 0.95 A N-channel current rating supports up to 350 mA per string at 100 kHz PWM; low Qgd ensures clean edge transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary small-signal MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSS84BKS,115 | Lower ID (−130 mA P / 170 mA N), higher RDS(on) (5 Ω P / 2.5 Ω N @ 2.5 V), same SOT-363 package | Suitable only for signal-level switching (<100 mA); not rated for automotive or avalanche stress | Select only for non-automotive, low-current bias or level-shifting where thermal margin is ample |
| DMC2038LSD-7 | Higher VDS (±30 V), lower RDS(on) (200 mΩ N / 450 mΩ P @ 4.5 V), but requires ≥3.3 V logic drive | Requires gate driver for 2.5 V systems; better for 5 V industrial supplies with higher current demands | Prefer when system uses 3.3 V+ logic and needs <300 mΩ RDS(on); avoid in 2.5 V MCU-only designs |
Compared with BSS84BKS,115 and DMC2038LSD-7, BSD235CH6327XTSA1 uniquely balances 2.5 V logic compatibility, AEC-Q101 qualification, and 0.95 A current capability - making it optimal for automotive body electronics and compact industrial power switches where gate drive voltage and reliability are constrained.
Availability
BSD235CH6327XTSA1 is available at Aetrix Electronics and suitable for automotive door modules, USB-C port power management, industrial sensor interfaces, and smart lighting dimmers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BSD235CH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.
The OptiMOS™-P 2 product line delivers high-performance, logic-level complementary MOSFETs optimized for space-constrained automotive and industrial power switches requiring low gate charge and robust transient handling.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The BSD235CH6327XTSA1 has a specified operating junction temperature range of −55°C to +150°C. For continuous operation, the absolute maximum Tj is +150°C, and derating begins above TA = 70°C per the ID vs. TA curves on page 5 of the Rev. 2.4 datasheet - with full rated current only guaranteed at TA ≤ 25°C.
Can this device be used in a synchronous buck converter as high-side and low-side switches?
No - the BSD235CH6327XTSA1 is not designed for synchronous buck operation. Its P-channel device lacks the low RDS(on) and fast switching characteristics needed for efficient high-side switching, and its gate drive timing is not optimized for shoot-through prevention. It is intended for load switching, half-bridge signaling, and bidirectional control-not power conversion topologies.
Is the PG-SOT-363 package compatible with standard reflow profiles for lead-free soldering?
Yes - the device is qualified for lead-free reflow per J-STD-020, with a peak soldering temperature of 260°C (10 seconds max). The package uses matte tin plating and meets IPC/JEDEC standards for thermal cycling and intermetallic growth, supporting standard Type 3 or Type 4 solder paste and convection reflow profiles.
Does the device include ESD protection on gate terminals?
Yes - the BSD235CH6327XTSA1 is rated Class H3B per JESD22-A114-HBM (≥2 kV human-body model) on all gate pins. This is verified per AEC-Q101 test condition G, and the device includes internal gate oxide protection structures that prevent damage during board handling and assembly without requiring external Zener clamps.
BSD235CH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 950mA, 530mA
- Rds On (Max) @ Id, Vgs:
- 350mOhm @ 950mA, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 1.6µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.34nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 47pF @ 10V
- Power - Max:
- 500mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-6-1
BSD235CH6327XTSA1 FAQ
1.How can I place an order for BSD235CH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSD235CH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSD235CH6327XTSA1 reliable?
The price and inventory of BSD235CH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSD235CH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BSD235CH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSD235CH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSD235CH6327XTSA1?
BSD235CH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSD235CH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSD235CH6327XTSA1?
For technical support, including BSD235CH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSD235CH6327XTSA1 requirements.
6.How does Aetrix verify that BSD235CH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BSD235CH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSD235CH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BSD235CH6327XTSA1?
All BSD235CH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSD235CH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSD235CH6327XTSA1 part is unused and in its original packaging.
Return procedure for BSD235CH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BSD235CH6327XTSA1 Tags

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2N7002DWH6327XTSA1
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