Infineon Technologies BSG0810NDIATMA1

Overview

BSG0810NDIATMA1 from Infineon Technologies is a dual asymmetric N-channel OptiMOS™5 power block integrating high-side and low-side MOSFETs with monolithic Schottky-like diode functionality in a single PG-TISON8-4 package. It delivers 50 A continuous drain current per channel at V_GS = 10 V, R_DS(on) of 3.2 mΩ (Q1) and 1.0 mΩ (Q2), and is optimized for high-efficiency buck converters in server VRMs and telecom POL applications.

For engineers reviewing the BSG0810NDIATMA1 datasheet, BSG0810NDIATMA1 pinout, BSG0810NDIATMA1 application, or BSG0810NDIATMA1 equivalent, key selection criteria include asymmetric R_DS(on) pairing, logic-level gate drive compatibility (4.5 V rated), integrated body-diode performance, thermal resistance (R_thJC = 4.3 K/W for Q1, 1.8 K/W for Q2), and JEDEC-qualified reliability for high-power DC-DC conversion.

Technical Context

The BSG0810NDIATMA1 implements an asymmetric dual-MOSFET topology where Q1 (high-side) and Q2 (low-side) are individually optimized: Q1 features higher V_DS rating (25 V) and lower gate charge (Q_g = 5.6–8.4 nC), while Q2 prioritizes ultra-low conduction loss (R_DS(on) = 1.0 mΩ typ at V_GS = 10 V) and higher pulsed current capability (160 A).

Its monolithic integration eliminates discrete layout parasitics, enabling fast switching (t_r = 4.7 ns for Q1, t_f = 2.4 ns for Q2) and reduced reverse recovery charge (Q_rr = 10 nC for Q2), critical for 500 kHz+ synchronous buck operation with <12 V input and 30 A output.

Key Specifications

Pinout & Package

BSG0810NDIATMA1 uses the PG-TISON8-4 surface-mount package (8-pin, exposed drain pad), designed for high-current PCB mounting with low-inductance source/drain routing and thermal via access to inner copper layers.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-MOSFET power block applications.

Compared with IRFH7107TRPBF and TPH1R203PL,LQ, BSG0810NDIATMA1 uniquely integrates matched asymmetric switches and a shared VPhase node in one package-reducing component count, layout area, and switching node inductance-making it optimal for high-density, high-frequency buck converters where system-level efficiency and transient response are prioritized over individual gate control flexibility.

Availability

BSG0810NDIATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drive auxiliary supplies, and AI accelerator board power delivery requiring stable component supply across multi-year production cycles.

Supply support for BSG0810NDIATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The OptiMOS™5 power block product line targets high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems-designed to replace discrete MOSFET pairs with monolithic, thermally optimized, and layout-optimized integration.

FAQ

What is the maximum recommended operating junction temperature for BSG0810NDIATMA1?

The absolute maximum junction temperature is 150 °C per JEDEC qualification. For reliable long-term operation, Infineon recommends limiting T_j to ≤135 °C under continuous load, based on thermal characterization showing R_thJC = 4.3 K/W (Q1) and 1.8 K/W (Q2) with proper PCB copper area (6 cm², 70 µm thick).

Can BSG0810NDIATMA1 be used in a non-synchronous buck configuration?

Yes - the integrated Schottky-like diode in Q2 enables non-synchronous operation by conducting during low-side off-time. However, efficiency drops significantly above 10 A due to V_SD = 0.49 V; synchronous mode is strongly preferred for >5 A loads to minimize conduction loss and thermal stress.

Is the PG-TISON8-4 package lead-free and RoHS-compliant?

Yes - BSG0810NDIATMA1 uses Pb-free lead plating and complies fully with EU RoHS Directive 2011/65/EU and halogen-free requirements per IEC61249-2-21, verified in the official Infineon product change notice PCN-2016-001.

How does the asymmetric gate charge affect dead-time requirements in synchronous buck designs?

Q1's lower total gate charge (5.6–8.4 nC) versus Q2's higher charge (16–25 nC) means Q2 requires longer gate drive energy and slower effective turn-on. Dead time must be set ≥40 ns to prevent shoot-through, with emphasis on delaying Q2 turn-on after Q1 turn-off - confirmed by t_d(off) = 4.3 ns (Q1) and t_d(on) = 5.1 ns (Q2) under 5 V drive.