Infineon Technologies BSG0811NDATMA1

Overview

BSG0811NDATMA1 from Infineon Technologies is a dual asymmetric N-channel OptiMOS™5 power block integrating high-side (Q1) and low-side (Q2) MOSFETs in a single PG-TISON8-4 package, rated for 25 V V_DS, with R_DS(on) of 4.0 mΩ (Q1) and 1.1 mΩ (Q2) at V_GS = 4.5 V, optimized for high-efficiency synchronous buck converters in server VRMs and POL applications.

For engineers reviewing the BSG0811NDATMA1 datasheet, BSG0811NDATMA1 pinout, BSG0811NDATMA1 application, or BSG0811NDATMA1 equivalent, key selection criteria include asymmetric conduction capability, logic-level gate drive compatibility (4.5 V), integrated thermal performance (R_thJC = 4.3 K/W for Q1, 1.8 K/W for Q2), and JEDEC-qualified reliability for high-current DC-DC conversion.

Technical Context

This power block implements a thermally decoupled dual-MOSFET topology where Q1 (high-side) and Q2 (low-side) are independently optimized: Q1 features lower gate charge (Q_g = 5.6–8.4 nC) and higher R_DS(on) for voltage switching, while Q2 delivers ultra-low R_DS(on) (0.9–1.1 mΩ) and higher Q_g (20–29 nC) for current conduction duty.

Dynamic parameters reflect buck-specific tuning: C_iss of 780–1100 pF (Q1) and 2700–3700 pF (Q2), t_d(on)/t_d(off) asymmetry (4.3 ns / 4.3 ns for Q1; 5.6 ns / 8.8 ns for Q2), and reverse recovery charge Q_rr of 10 nC (Q1) and 20 nC (Q2), enabling efficient 500 kHz operation at 30 A output.

Key Specifications

Pinout & Package

PG-TISON8-4 surface-mount package with exposed drain pads for both Q1 and Q2, 8-pin configuration supporting integrated high-side/low-side layout in compact buck phase modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-MOSFET power block applications.

Compared with IRFH7107TRPBF, BSG0811NDATMA1 reduces component count and PCB area by integrating both switches, while its asymmetric design lowers total losses in high-duty-cycle buck topologies; SPW24N60C3 is unsuitable due to voltage class and drive incompatibility.

Availability

BSG0811NDATMA1 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator power delivery, telecom baseband supplies, and industrial FPGA core supplies requiring stable component supply and JEDEC-qualified reliability.

Supply support for BSG0811NDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

The OptiMOS™5 power block product line targets high-efficiency, high-density DC-DC conversion in datacenter, AI, and telecom infrastructure, emphasizing thermal co-design, asymmetric optimization, and JEDEC-compliant robustness.

FAQ

What is the maximum recommended switching frequency for BSG0811NDATMA1 in a buck converter?

The device is characterized and validated for reliable operation up to 1 MHz, but optimal efficiency and thermal performance are achieved at 300–600 kHz. At 500 kHz with 30 A output, measured losses align with datasheet typ values (Q_g, C_oss, R_DS(on)), and SOA curves confirm safe operation under repetitive pulsed conditions per Figure 5–6.

Can BSG0811NDATMA1 be used in a half-bridge configuration with external gate drivers?

Yes - the PG-TISON8-4 pinout supports standard half-bridge layout: D1 is high-side drain (V_IN), S1/D2 is phase node, G1/G2 accept independent gate signals, and S2 is low-side source (GND). Driver selection must respect Q1's 2.6 V gate plateau and Q2's 2.3 V plateau to avoid Miller-induced false turn-on.

Does BSG0811NDATMA1 include integrated Schottky body diodes?

No - it uses optimized silicon body diodes inherent to the OptiMOS™5 process. Q1 and Q2 exhibit V_SD = 0.84 V and 0.77 V respectively at 20 A, with Q_rr = 10 nC and 20 nC. These are not Schottky but are engineered for low Q_rr/V_SD trade-off in synchronous rectification.

Is the thermal pad electrically isolated in BSG0811NDATMA1?

No - the exposed drain pads for Q1 and Q2 are electrically common and tied to their respective drain terminals (Pin 1 and Pin 2/S1-D2). PCB layout must treat the thermal pad as a high-current, high-dV/dt node; isolation requires dielectric prepreg or slotting beneath the pad.