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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. BSH103,215

Name: BSH103,215
Brand: Nexperia USA Inc.
SKU: BSH103,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSH103,215

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSH103,215.pdf

Description:: MOSFET N-CH 30V 850MA TO236AB

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Product details

Overview

BSH103,215 from Nexperia (formerly Philips Semiconductors) is an N-channel enhancement-mode MOSFET in SOT23 package, designed for low-voltage switching with 30 V V_DS, 0.5 Ω R_DS(on) at V_GS = 2.5 V, and 0.85 A continuous drain current. It serves as a compact, logic-level-compatible power switch in battery-powered DC-DC converters and peripheral interface circuits.

For engineers reviewing the BSH103,215 datasheet, BSH103,215 pinout, BSH103,215 application, or BSH103,215 equivalent, key selection criteria include its sub-1 V gate threshold voltage, 2.5 V logic-level drive capability, 83 pF input capacitance, and SOT23 thermal resistance of 140 K/W - critical for space-constrained, low-power switching designs.

Technical Context

This MOSFET operates in enhancement mode with a typical V_GS(th) of 0.4 V, enabling direct interface to 1.8 V and 2.5 V CMOS logic without level shifting. Its R_DS(on) remains below 0.6 Ω down to V_GS = 1.8 V, supporting efficient operation in ultra-low-voltage systems.

The device features no secondary breakdown limitation and integrates a source-drain diode with 1 V forward drop at 0.5 A. Switching performance includes 6 ns turn-on time and 27 ns turn-off time under 6 Ω gate drive, optimized for high-frequency PWM control in portable power management.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V rail switching and transient margin in industrial and automotive auxiliary supplies
R_DS(on)	0.5 Ω @ V_GS = 2.5 V, I_D = 0.5 A - enables <125 mW conduction loss at 500 mA, suitable for thermally constrained PCBs
V_GS(th)	0.4 V min - ensures reliable turn-on with 1.8 V microcontroller GPIOs and eliminates need for gate boosters
I_D (DC)	0.85 A @ T_s = 80 °C - delivers usable current in SOT23 with standard PCB copper area
C_iss	83 pF - limits gate drive energy to ~19 nJ at 4.5 V, easing low-power driver selection
t_on/t_off	6 ns / 27 ns @ R_gen = 6 Ω - supports >10 MHz PWM in point-of-load regulators
P_tot	0.5 W @ T_s = 80 °C - defines maximum steady-state dissipation with solder-point thermal path

Pinout & Package

SOT23 plastic surface-mounted package (3 leads), 1.4 mm × 2.8 mm footprint, 1.1 mm height, with gull-wing leads for reflow compatibility and manual inspection.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts logic-level voltage (≥0.4 V) to modulate channel conduction; requires ESD-safe handling
2	Source (S)	Reference node for gate drive; tied to system ground or low-side return path in high-side configurations
3	Drain (D)	Power output terminal; connects to load or supply rail; carries full switched current and dissipates I²R losses

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced from 1.8 V V_GS, eliminating external level shifters in 1.8/2.5 V MCU systems
No secondary breakdown	Enables safe linear-mode operation and robustness against short-circuit transients without SOA derating
Low Q_G	2100 pC total gate charge reduces switching losses and simplifies gate driver sizing for low-power applications
Integrated body diode	1 V V_SD at 0.5 A supports synchronous rectification and flyback recovery in buck converters
ESD-protected packaging	Supplied in anti-static tape-and-reel per SNW-EQ-608, preventing gate oxide damage during SMT assembly

Applications

Battery-Powered Load Switch

Low-Voltage DC-DC Converter

Use Scenario: Enabling/disabling power to Bluetooth modules or sensors in wearables with 1.8–3.3 V supply rails.

IC Role / Device Role / Timing Role: Low-side power switch controlled by MCU GPIO; handles up to 850 mA peak load current.

Use Value: Sub-0.5 Ω on-resistance minimizes dropout and extends battery life; 0.4 V V_GS(th) guarantees turn-on even at end-of-discharge voltages.

Use Scenario: High-side synchronous rectifier in 3.3 V output buck converter powered from single Li-ion cell.

IC Role / Device Role / Timing Role: Power FET in main switching leg; driven by dedicated gate controller with 6 Ω series resistance.

Use Value: 6 ns t_on and 27 ns t_off enable >1 MHz operation; 83 pF C_iss keeps gate drive current below 1 mA at 1 MHz.

Logic-Level Peripheral Interface

Glue Logic Power Gate

Use Scenario: Isolating I²C or SPI peripherals from host processor during sleep mode in IoT edge nodes.

IC Role / Device Role / Timing Role: Bidirectional signal path switch; source and drain interchangeable due to symmetric structure.

Use Value: 14 pF Crss suppresses crosstalk; 27 pF Coss stabilizes output impedance across 0–24 V V_DS range.

Use Scenario: Controlling power to FPGA configuration memory or display backlight in handheld devices.

IC Role / Device Role / Timing Role: Single-pole, single-throw (SPST) power gate; driven directly from 2.5 V CPLD output.

Use Value: 0.5 Ω R_DS(on) limits voltage drop to <425 mV at 850 mA, preserving tight 3.3 V ±5% rail tolerance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 0.35 Ω @ V_GS = 2.5 V; higher 1.2 A I_D; same SOT23-3 package	Better conduction efficiency above 600 mA; slightly higher C_iss (105 pF)	Select when lower on-loss is prioritized over gate drive simplicity
AO3400	V_GS(th) = 0.7 V min; R_DS(on) = 0.042 Ω @ V_GS = 4.5 V; not logic-level at 1.8 V	Requires ≥3.3 V gate drive; unsuitable for direct 1.8 V MCU interface	Choose only if system uses 3.3 V or higher logic and demands ultra-low R_DS(on)

Compared with DMN2004LK-7 and AO3400, BSH103,215 uniquely balances 0.4 V threshold, 0.5 Ω on-resistance at 2.5 V, and proven reliability in 1990s–2000s portable designs - making it optimal for legacy-compatible, low-voltage, low-current switching where gate drive headroom is minimal.

Availability

BSH103,215 is available at Aetrix Electronics and suitable for battery-powered load switching, low-voltage DC-DC converters, and logic-level peripheral interface applications requiring stable component supply and long-term obsolescence support.

Supply support for BSH103,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia, formerly Philips Semiconductors, is a global leader in discrete and logic ICs, specializing in high-volume, high-reliability components for consumer, industrial, and automotive markets.

The BSH103,215 belongs to Nexperia's legacy logic-level MOSFET product line, engineered specifically for space-constrained, low-voltage power switching in portable electronics and interface applications from the late 1990s onward.

FAQ

Is BSH103,215 compatible with 1.8 V microcontroller GPIOs?

Yes. With a minimum gate threshold voltage of 0.4 V and guaranteed turn-on at V_GS = 1.8 V (R_DS(on) ≤ 0.6 Ω), BSH103,215 interfaces directly to 1.8 V CMOS outputs without level-shifting circuitry. Its low V_GS(th) ensures robust activation even under voltage droop or temperature variation.

What is the maximum continuous drain current at room temperature?

At T_s = 25 °C with proper PCB copper area (note 3: R_th a-tp = 27.5 K/W), P_tot = 0.75 W allows I_D up to approximately 1.22 A (calculated from I_D = √(P_tot/R_DS(on)) = √(0.75/0.5)). However, the datasheet specifies 0.85 A at T_s = 80 °C as the rated DC limit for guaranteed reliability across temperature.

Does BSH103,215 include integrated ESD protection?

Yes. The device is supplied in anti-static packaging per Philips specifications SNW-EQ-608 and SNW-FQ-302A/B, and its gate oxide is rated for ±8 V V_GS - providing inherent protection against handling ESD events. No external gate protection resistor is required for standard SMT assembly.

Can BSH103,215 be used in linear (analog) mode operation?

Yes. Unlike many modern MOSFETs, BSH103,215 has no secondary breakdown limitation, allowing safe linear-mode use in constant-current sources or analog switches. Its SOAR curve (Fig.3) confirms stable operation up to 30 V and 3.4 A pulsed current within thermal limits.

BSH103,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 850mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V

Rds On (Max) @ Id, Vgs:: 400mOhm @ 500mA, 4.5V

Vgs(th) (Max) @ Id:: 400mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 2.1 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 83 pF @ 24 V

FET Feature:: -

Power Dissipation (Max):: 540mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

BSH103,215 FAQ

1.How can I place an order for BSH103,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSH103,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSH103,215 reliable?

The price and inventory of BSH103,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSH103,215 is usually 5 days.

3.What payment methods are accepted for BSH103,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSH103,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSH103,215?

BSH103,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSH103,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSH103,215?

For technical support, including BSH103,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSH103,215 requirements.

6.How does Aetrix verify that BSH103,215 is sourced from the original manufacturer or authorized distributors?

All BSH103,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSH103,215 meets industry standards.

7.What is the process for return or replacement of BSH103,215?

All BSH103,215 units undergo pre-shipment inspection (PSI). If there is an issue with BSH103,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSH103,215 part is unused and in its original packaging.

Return procedure for BSH103,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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